• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.157-161
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• 2008

An optical sensor was developed to detect nanoparticles, turbid materials and microorganisms in water simultaneously. Three different light sources like UV-LED, NIR-LED and laser diode have been employed to develop the optical sensor based on the scattering light and fluorescence light. The sensor system has high selectivity and sensitivity, that it can be used to monitor the quality of drinking water.

• Journal of the Korean Applied Science and Technology
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• v.19 no.3
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• pp.245-249
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• 2002

A (disk-like liquid crystal (DLC) monomer/liquid crystals(LCs)/chiral dopant/dichroic dye) composite was irradiated with ultraviolet (UV) light. The (DLC network/LCs/chiral dopant/dichroic dye) was formed in the homeotropically oriented smectic A(SA) phase by the surface orientation treatment and the electric field. A focal-conic texture exhibiting strong light scattering appeared in the heat-induced chiral nematic phase(N${\ast}$) of the composite upon heating. Thermo-recording in the composite system has been realized by using a He-Ne laser. The laser irradiation was induced the phase transitions from SA phase to chiral nematic(N${\ast}$) phase in the composite system.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.238-239
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• 2000

The optical fibers are an interesting medium for effective tunable optical frequency conversion in the spectral range of UV, Visible, and near-IR through the nonlinear processes. A number of papers for developing the wideband and flat-gain amplifier for the WDM system applications through the combination of EDFA or thulium-doped fluoride fiber amplifier and Raman amplifier, are reported$^{(1)}$ . Even though a variety of papers related to Raman amplifications are published, the amplification with the feedback of the residual pump is not investigated yet. Accordingly, in this paper, we report the characteristics of forward Raman amplification by the simple and double-pass fiber Raman configuration through the feedback of residual pump beam. (omitted)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.184-188
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• 2002

Unsaturated $Cr(CO)_x(1{\leq}x{\leq}5)$molecules were generated in the gas phase from photolysis of $Cr(CO)_6$vapor in He using an unfocussed weak UV laser pulse and their reactions with $O_2$ and $N_2O$ have been studied. The formation and disappearance of the ground state CrO molecules were identified by monitoring laser-induced fluorescence(LIF) intensities vs delay time between the photolysis and probe pulses. The photolysis laser power dependence as well as the delay time dependence of LIF intensities from the CrO orange system showed different behavior as those from ground state Cr atoms, suggesting that the ground state CrO molecules were generated from the reaction between $O_2/N_2O$ and photo-fragments of $Cr(CO)_6$ by one photon absorption. The depletion rate constants for the ground state CrO by $O_2$ and $N_2O$ are $5.4{\pm}0.2{\times}10^{-11}$ and $6.5{\pm}0.4{\times}10^{-12}cm^3molecule^{-1}s^{-1}$, respectively.

• Journal of the Korean Society of Combustion
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• v.12 no.4
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• pp.1-7
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• 2007

Carbon monoxide (CO) is not only an important intermediate species in chemical reaction mechanisms of hydrocarbon fuel combustion, but also a crucial pollutant species emitted from automotive engines. To better understand the physical processes impacting CO emissions, the development of laser-based measurement techniques that can visualize in-cylinder CO distributions is desirable. Among these techniques, Laser-Induced Fluorescence (LIF) is a sensitive and species-selective detection technique capable of good spatial resolution. However, some technical matters such as deep UV excitation, severe pressure dependency of the LIF signal, and potential interference from other species have been major challenges for CO LIF application. This study is focused on investigating the feasibility of CO two-photon LIF in a direct-injection diesel engine operating at typical pressure and temperature conditions with commercial grade diesel fuel. Spectroscopic analysis shows that the CO fluorescence signal can be separated from $C_2$ Swan band or broadband fluorescence from PAHs when the signal is collected near 483 nm. The signal-to-noise ratio of CO LIF deteriorate rapidly as pressure is increased, following $P^{-1.49}$ which matches the theoretical signal pressure dependency.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.961-963
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• 2015

In this study, we studied the effect of $Co^{60}$ gamma-radiation on the fiber Bragg gratings written by femtosecond UV laser in single mode optical fibers. The fiber Bragg gratings were exposed to gamma-radiation up to a dose of about 31.6 kGy at the dose rate of 106 Gy/min. According to the experimental data and analysis results, we confirmed Bragg gratings written by femtosecond laser have the excellent radiation-hardened characteristics for high radiation environments.