• 공업화학
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• 제24권6호
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• pp.611-615
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• 2013

본 연구에서는 바나듐 산화물($VO_2$)과 텅스텐이 도핑된 바나듐 산화물(W-$VO_2$) 분말을 바나듐 산화물($V_2O_5$)과 옥살산수화물로부터 수열합성과 하소공정을 통하여 성공적으로 제조하였다. 시료들의 결정구조와 열변색 특성들은 FE-SEM, XRD, XPS, DSC 및 UV-Vis-NIR 분광기를 이용하여 분석하였다. W-$VO_2$ 시료에 W의 도핑량을 증가시키면, W-$VO_2$ 시료의 상전이 온도가 $70^{\circ}C$에서 $42^{\circ}C$로 낮아지는 경향이 있었다. 또한, W-$VO_2$ 시료를 상전이 온도 이상으로 가열시키면 UV-Vis-NIR 곡선이 가시광 영역에서는 변하지 않고 NIR 영역에서는 낮은 투과도 방향으로 이동하는 경향이 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.87-88
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• 2012

Metal oxide nanostructures have been applied to various fields such as energy, catalysts and electronics. We have freely designed one and two-dimensional (1 and 2-D) metal (transition metals and lanthanides) oxide nanostructures, characterized them using various techniques including scanning electron microscopy, transmission electron microscopy, X-ray diffraction crystallography, thermogravimetric analysis, FT-IR, UV-visible-NIR absorption, Raman, photoluminescence, X-ray photoelectron spectroscopy, and temperature-programmed thermal desorption (reaction) mass spectrometry. In addition, Ag- and Au-doped metal oxides will be discussed in this talk.

• 대한기계학회논문집A
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• 제31권4호
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• pp.483-489
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• 2007

We have investigated quantitative measurement techniques of the degree of dispersion of single-walled carbon nanotubes (SWNTs). SWNTs were suspended in aqueous media using a sodium dodecyl sulfate (SDS) surfactant. SWNTs with different dispersion states were prepared by controlling the intensity and time of sonication and centrifugation. The laser spectroscopic techniques were employed to characterize the dispersion state; i.e., raman fluorescence and absorption spectroscopic techniques. Raman spectroscopy has been used to probe the dispersion and aggregation state of SWNTs in solution. Individually suspended SWNTs show increased fluorescence peaks and decreased roping peaks at a raman shift 267 $cm^{-1}$ compared with the samples containing bundles of SWNTs. The ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectrum of decanted supernatant samples show sharp van Hove singularity peaks

• 한국전자파학회논문지
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• 제26권1호
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• pp.101-112
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• 2015

II~VI족 화합물 반도체 $Zn_xCd_{1-x}S$ 박막을 Indium-tin-oxide(ITO)가 도포된 유리기판 상에 열증발법을 사용하여 증착하였다. 박막의 합성비(molar ratio) x($0{\leq}x{\leq}1$)는 CdS(x=0) 박막과 ZnS(x=1) 박막을 포함하여, 삼원화합물 $Zn_xCd_{1-x}S$ 박막을 제조하기 위하여 변화시켰다. 또한, 증착한 박막의 결정성을 높이기 위하여 진공전기로에서 열처리 하였으며, 분광학적 특성조사를 위해서는 $400^{\circ}C$에서 열처리한 $Zn_xCd_{1-x}S$ 박막이 최적임을 알았다. $Zn_xCd_{1-x}S$ 박막의 합성비(x)와 전자적 구조를 조사하기 위하여 X-선 광전자 분광법(XPS)을 사용하였고, 박막시료의 광학적 에너지 띠 간격 $E_g$는 자외선-가시광-근접 적외선(UV-Vis-NIR) 분광법으로 측정하였으며, 합성비(x)값이 0에서 1까지 변화함에 따라 2.44~3.98 eV 범위의 값을 보여주었다. 끝으로, THz-TDS(Time Domain Spectroscopy) 시스템을 사용하고 $Zn_xCd_{1-x}S$ 박막의 THz파 특성을 측정하여 테라헤르츠(THz) 영역용 전자 및 광학 소자로서 응용가능성을 확인하였다.

• 한국세라믹학회지
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• 제29권1호
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Environmental Engineering Research
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• 제17권4호
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• pp.179-184
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• 2012

The light absorbance of photocatalysts and reaction kinetics of environmental pollutants at the liquid-solid and gas-solid interfaces differ from each other. Nevertheless, many previous photocatalytic studies have applied the science to aqueopus applications without due consideration of the environment. As such, this work reports the surface and morphological characteristics and photocatalytic activities of carbon-embedded (C-$TiO_2$) photocatalysts for control of gas-phase methyl tertiary-butyl ether (MTBE) under a range of different operational conditions. The C-$TiO_2$ photocatalysts were prepared by oxidizing titanium carbide powders at $350^{\circ}C$. The characteristics of the C-$TiO_2$ photocatalysts, along with pure TiC and the reference pure $TiO_2$, were then determined by X-ray diffraction, scanning emission microscope, diffuse reflectance ultraviolet-visible-near infrared (UV-VIS-NIR), and Fourier transform infrared spectroscopy. The C-$TiO_2$ powders showed a clear shift in the absorbance spectrum towards the visible region, which indicated that the C-$TiO_2$ photocatalyst could be activated effectively by visible-light irradiation. The MTBE decomposition efficiency depended on operational parameters, including the air flow rate (AFR), input concentration (IC), and relative humidity (RH). As the AFRs decreased from 1.5 to 0.1 L/min, the average efficiencies for MTBE increased from 11% to 77%. The average decomposition efficiencies for the ICs of 0.1, 0.5, 1.0, and 2.0 ppm were 77%, 77%, 54%, and 38%, respectively. In addition, the decomposition efficiencies for RHs of 20%, 45%, 70%, and 95% were 92%, 76%, 50%, and 32%, respectively. These findings indicate that the prepared photocatalysts could be effectively applied to control airborne MTBE if their operational conditions were optimized.

• 한국태양에너지학회 논문집
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• 제31권4호
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• pp.48-56
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• 2011

Black cobalt solar selective coatings were prepared by thermal oxidation of electroplated cobalt metal on copper and nickel substrates. The optical properties and structure of the black cobalt selective coating for solar energy utilizations were characterized by glow discharge spectrometry (GDS), ultraviolet-visible-near infrared (UV-VIS-NIR) spectrometer, atom force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS). The optical properties of optimum black cobalt selective coating prepared on copper substrate were a solar absorptance of 0.82 and a thermal emittance of 0.01. From the GDS depth profile analysis of these coatings, the concentration of cobalt particles near the interface was higher than at the surface, but oxygen concentration at the surface was higher than at the interface. These results suggest that the selective absorption was dominated by this chemical composition variation in the coating. The surface of this film exhibited morphology with root-mean-square(rms) roughness of about 144.3nm. XPS measurements data showed that several phases of Co coexist($Co_3O_4$,CoO) in the film.

• 한국표면공학회지
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• 제51권2호
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Current Photovoltaic Research
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• 제8권1호
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.