• Journal of Sensor Science and Technology
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• v.13 no.5
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• pp.350-355
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• 2004

A novel UV sensor was manufactured and characterized using the evanescentfield coupling between fiber-planar waveguide (PWG) coupler and prism. A spiroxazine dye was chosen as planar waveguide because its photochromic isomerization induced by UV irradiation. A novel UV sensor was proposed to measure the variation of refractive index and absorption coefficient simultaneously. The wavelength responses of these sensors by UV exposure times were measured 0.48 nm/sec, 0.757 nm/sec, and ATR output power variations were measured $-0.424{\mu}W$/sec and $-0.62{\mu}W$/sec when UV exposure power were 3 mW and 5 mW, respectively.

• Journal of Sensor Science and Technology
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• v.15 no.4
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• pp.231-236
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• 2006

Single-mode planar waveguide type UV sensor was fabricated using SU-8 and photochromic dye. Polymer waveguide was fabricated $10{\mu}m$ width and $2{\mu}m$ thickness for single-mode operation. The UV sensor had an absorbance with $0.0396{\sim}0.114$ absorbance/mW respectively when the 5 mm sensing area was irradiated with UV for 3 sec. And sensor had a linear properties by sensing area variation. Proposed single-mode sensor had more excellent properties of UV sensitivity than other UV sensors.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.100-103
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• 2007

A microlens array has been required to improve light conversion efficiency in image sensors. A microlens array can be usually fabricated by photoresist reflow, hot-embossing, micro injection molding, and UV-imprinting. Among these processes, a UV-imprinting, which is operated at room temperature with relatively low applied pressure, can be a desirable process to integrate microlens array on image sensors, because this process provides the components with low thermal expansion, enhanced stability, and low birefringence, furthermore, it is more suitable for mass production of high quality microlens array. In this study, to analyze the optical properties of the wafer scale microlens array integrated image sensor, another wafer scale simulated image sensor chip array was designed and fabricated. An aspherical square microlens was designed and integrated on a simulated image sensor chip array using a UV-imprinting process. Finally, the optical performances were measured and analyzed.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.83-87
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• 2015

This study was focused on developing an optical sensor that monitors ultraviolet (UV) light. Recently, we proposed and demonstrated a novel, highly sensitive UV sensor based on a fiber Bragg grating (FBG). To ensure that the incident UV light is focused on the FBG surface, the sensor was coated with an azobenzene polymer material that acts as a UV-induced stretchable functional material, in combination with a cylindrical focal lens. In this study we have improved the sensitivity of the sensor by employing a cylindrical focal mirror as a curved reflector, to refocus the UV light passing through the FBG. We considered the performance of several different types of reflectors and chose the optimal radius of curvature for the reflector. Compared to the UV sensor without an auxiliary device, the sensitivity of the FBG sensor with a focal lens and a curved reflector was 15 times as high.

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.751-757
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• 2018

In this article, a UV sensor that is an appropriate tool for fire detection has been designed and constructed. The structure of this UV sensor is an air-filled single-wire detector that is able to operate under normal air condition. A reflective CsI photocathode is installed at the end of the sensor chamber to generate photoelectrons in the ion chamber. An electric current is produced by accelerating photoelectrons to the anode in the electric field. The detector is able to measure the intensity of the incident UV rays whenever the current is sufficiently high. Therefore, the sensitivity coefficient of this sensor is found to be $7.67{\times}10^{-6}V/photons/sec$.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.37-41
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• 2018

This paper presents the integrated fluorescent oxygen sensor probe module based on planner lightwave circuits using UV imprint lithography. The oxygen sensor system is consisted of the optical source part, optical detector part and optical sensing probe part to be composed of the planner lightwave circuit and oxygen sensitive thin film layer. Firstly, we optimally designed the planner lightwave circuit with asymmetric $1{\times}2$ beam splitter using beam propagation method. Then, we fabricated the planner lightwave circuits using UV imprint lithography process. This planner lightwave circuits transmitted the optical power with 76% efficiency and the fluorescence signal with 70% efficiency. The oxygen sensitive thin film layer is coated on the end face of planner lightwave circuit. The oxygen sensor system using this sensor probe module with planner lightwave circuit could measure the concentration with 0.3% resolution from 0% to 20% gas range. This optical oxygen sensor probe module make it possible to compact, simple and cheap measurement system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.72-75
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• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.114-115
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• 1999