• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.295-303
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• 2017

In this paper, we have studied a method of forming a line beam using a UV LED. The existing linear-type UV LED curing optical system is composed of several cylindrical lenses, but problems such as optical system alignment, enlargement of the module, efficiency, etc. may arise in the future. As an alternative to these problems, a bar-type TIR lens having a freeform surface only in the y-axis direction is designed, to verify that it shows advantages in maximum illuminance, uniformity of illuminance, and flux efficiency.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.401-404
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• 2010

The ion-beam induced changes in the characteristics of gadolinium doped ceria (GDC) pellets have been studied by UV-visible spectroscopy (UV-vis), SEM, and XRD. Implanted ions were protons or Xe ions with the energy of 120 keV or 5 MeV. Densely sintered pristine GDC pellets have cubic fluorite structure and are brown in color. As the ion irradiation proceeded, its color gradually turned into light black and finally into dark black. XRD patterns of GDC pellets were closely related with ion energy and the penetration depth of X-ray. It showed that upon the ion irradiation (120 keV) the lattice parameter of the cubic fluorite phase just beneath the surface is increased.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.194-198
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• 2013

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

• Macromolecular Research
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• v.9 no.3
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• pp.171-178
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• 2001

We report the diffraction behavior of the functionalized sol-gel film composed of two different silanes. One silane (SGDR1) contains disperse red 1 (DR1) that is composed of an azobenzene unit. The other silane (SGCHC) bears a chalcone derivative that is photocrosslinkable under UV irradiation. Two-beam coupling method was employed for fabricating the diffraction gratings. The dynamics of formation and erasure of the gratings was studied in term of the variation of the diffraction efficiency. The decaying behavior of the polarization efficiency was also observed after turning off the two pump beams. For complete erasure of the diffraction gratings, we irradiated the linearly polarized single beam. During two-beam coupling, we irradiated UV light on the film surface. The effects of the photocrosslink between the double bonds in chalcone units on the value and dynamic properties of diffraction efficiency are mainly studied in this work.

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.37-41
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• 2018

This paper presents the integrated fluorescent oxygen sensor probe module based on planner lightwave circuits using UV imprint lithography. The oxygen sensor system is consisted of the optical source part, optical detector part and optical sensing probe part to be composed of the planner lightwave circuit and oxygen sensitive thin film layer. Firstly, we optimally designed the planner lightwave circuit with asymmetric $1{\times}2$ beam splitter using beam propagation method. Then, we fabricated the planner lightwave circuits using UV imprint lithography process. This planner lightwave circuits transmitted the optical power with 76% efficiency and the fluorescence signal with 70% efficiency. The oxygen sensitive thin film layer is coated on the end face of planner lightwave circuit. The oxygen sensor system using this sensor probe module with planner lightwave circuit could measure the concentration with 0.3% resolution from 0% to 20% gas range. This optical oxygen sensor probe module make it possible to compact, simple and cheap measurement system.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.246-249
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• 2009

A compact, flexible family of UV laser material processing systems has been developed to drive advancements in both large area processing and annealing of semiconductor surfaces. UV photons can either be applied via demagnifying a mask pattern image or by scanning a homogenized excimer beam across the substrate area. 193nm, 248nm and 308nm wavelength applications are supported.

• Laser Solutions
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• v.15 no.4
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• pp.16-19
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• 2012

Due to the fact that the dimensions of circuit lines of IC substrates have been forecast to reduce rapidly, engraving the circuit line patterns with laser has emerged as a promising alternative. To engrave circuit line patterns in an IC substrate, we used a projection ablation technique in which a metal (INVAR) mask and a DPSS UV laser instead of an excimer laser are used. Results showed that the circuit line patterns engraved in the IC substrate have a width of about 15um and a depth of $13{\mu}m$. This indicates that the projection ablation with a metal mask and a DPSS UV laser could feasibly replace the semi-additive process (SAP).

• Bulletin of the Korean Chemical Society
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• v.32 no.11
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• pp.4121-4124
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• 2011

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1043-1046
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• 2003

We investigated the EO performances of the UV aligned twisted nematic liquid crystal display (TN-LCD) with the UV exposure on a-C:H thin film surface. LC alignment using UV exposure on the a-C:H thin film surface was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. An good EO characteristics of the UV aligned TN-LCD was observed with oblique ion beam exposure on the a-C:H thin film surface. Therefore, the EO property of the UV-aligned TN-LCD with UV exposure on the a-C:H thin film surface is almost the same as that of the rubbing-aligned TN-LCD on a polyimide (PI) surface.