• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.56-63
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• 2023

본 연구에서는 졸-겔 IGZO(Indium-Gallium-Zinc Oxide) 박막을 만들고 이에 전자빔을 조사 한 후 박막 트랜지스터로 제작하여 전자빔 조사가 박막 트랜지스터의 전기적 특성에 미치는 영향을 비교 분석하였다. 특히 전자빔이 조사되는 환경을 대기 중과 질소 분위기(<200 ppm O₂)로 두고 전자빔 조사 선량 세기를 100kGy와 200kGy로 각각 조사한 후 350℃ 온도에서의 열처리만 진행한 비교군과 비교 분석을 진행하였다. 전자빔 조사에 따른 졸-겔 IGZO 박막의 물성 변화를 분석하기 위해 UV-Visible spectroscopy, X-ray diffraction(XRD)와 X-ray photoelectron spectroscopy(XPS)를 분석 결과, 전자빔 조사 전·후의 모든 조건 하에서 가시광 영역에서의 80% 이상의 높은 투과도를 보여줌을 확인할 수 있었고, XRD 분석 결과를 통해 전자빔 조사와 관계없이 비정질 특성을 유지함을 확인하였다. 특히 전자빔 조사에 따라 졸-겔 IGZO 박막에 화학적 조성 변화가 있음을 확인하였는데, 질소 분위기에서 전자빔을 조사하게 되면 M-O결합과 관련된 peak이 차지하는 비율이 높아짐을 확인할 수 있었다. 질소 분위기에서 전자빔이 조사된 TFT들은 on/off 비율, 전자 이동도에서 향상된 특성을 보여주었으며, 시간에 따라 트랜지스터의 특성들(on/off 비율, 문턱전압, 전자이동도, 하위임계값 스윙)의 수치 또한 큰 변화 없이 유지됨이 확인되어, 졸-겔 공정 TFT 제작에 있어서 질소 분위기에서의 전자빔 조사공정이 IGZO기반 박막 트랜지스터의 전기적특성의 개선에 기여할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.213-213
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• 2011

Gold catalysts supported on TiO2 have shown a unique catalytic behavior on CO oxidation, depending on surface effects. Particle size has an influence on the surface activity. To make monodisperse Au nanoparticles, organic capping ligands, such as alkylthiols, were used by a "greener" synthesis method [1,2] and Au nanoparticles were deposited on TiO2. However, organic capping ligands must be removed for high catalytic activities by the Au nanoparticles without changing the Au size [3]. We used UV ozone treatment to decompose thiol ligands. The samples have been characterized by X-ray photoelectron spectroscopy to examine the surface modification by UV ozone treatment. We show the size distribution of the gold nanoparticles by light scattering analysis and transmission electron microscopy. Au/TiO2 have been prepared using the wetness impregnation method. The catalytic performance of CO oxidation over Au supported on TiO2 under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) were tested. The results show that the catalytic activity depends on particle size and the time of UV ozone exposure, which suggests the role of sulfur bonding in determining the catalytic activity of Au/TiO2 catalysts.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.318-321
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• 2007

CdSe nanoparticles were prepared by chemical solution methods using $CdCl_2{\cdot}4H_2O$ (or $Cd(NO_3)_ 2{\cdot}4H_2O$) and $Na_2SeSO_3$. The characteristics of CdSe nanoparticles were controlled by the react ion time, reaction temperature and reaction method as well as the surfactants. Cetyltrimethyl ammonium bromide(CTAB) was used as a capping agent to control the chemical reactions in aqueous solution. Polyvinylalcohol(PVA) was used as a templet in sono-chemical method. CdSe nanoparticles synthesized in aqueous solution showed homogeneous size distribution with relatively stable surface. CdSe nanoparticles synthesized in non-aqueous solution containing diethanolamine(DEA) showed the structure transformation from cubic to hexagonal as the reduction temperature increased from 80 to $160^{\circ}C$. Core shell CdSe was synthesized by sono-chemical method. Characteristics of CdSe nanoparticles were analyzed using transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), x-ray diffraction(XRD), UV-Vis absorption spectra, fourier transform infrared spectroscopy(FT-IR) and photoluminescence spectra spectroscopy(PL). This paper presents simple routes to prepare CdSe nanoparticles for solar cell applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• Journal of Electrochemical Science and Technology
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• 제13권3호
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• pp.377-389
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• 2022

The current global energy supply depends heavily on fossil fuels. This makes technology such as direct water splitting from harvesting solar energy in photoelectrochemical (PEC) systems potentially attractive due to its a promising route for environmentally benign hydrogen production. In this study, undoped and nickel-doped molybdenum oxide photoanodes (called photoanodes S₁ and S₂ respectively) were synthesized through electrodeposition by applying -1.377 V vs Ag/AgCl (3 M KCl) for 3 hours on an FTO-coated glass substrate immersed in molibdatecitrate aqueous solutions at pH 9. Scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used for microstructural and compositional characterizations of the photoanodes. In addition, the optical and photoelectrochemical characterizations of these photoanodes were performed by UV-Visible spectroscopy, and linear scanning voltammetry (LSV) respectively. The results showed that all the photoanodes produced exhibit conductivity and catalytic properties that make them attractive for water splitting application in a photoelectrochemical cell. In this context, the photoanode S₂ exhibited better photocatalytic activity than the photoanode S₁. In addition, photoanode S₂ had the lowest optical band-gap energy value (2.58 eV), which would allow better utilization of the solar spectrum.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.227-227
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• 2012

본 연구에서는 RF스퍼터링법에 의하여 glass substrate에 In-Zn-Sn-O (IZTO)를 Zn 성분에 변화를 주면서 $350{\AA}$ 만큼 증착시키고, 1시간 동안 $350^{\circ}C$로 열처리 하였다. In:Zn:Sn의 성분 비율은 20:48:32 (IZTO1), 13:60:27 (IZTO2)이다. 박막의 전자적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UV-Spectrometer를 이용하여 연구하였고, 박막의 전기적 특성은 van der Pauw 법을 이용하여 측정하였다. XPS측정결과, IZTO박막은 In-O, Sn-O and Zn-O의 결합을 가진다. REELS를 이용해 Ep=1,500 eV에서의 밴드갭을 얻어보면, $350^{\circ}C$로 열처리 한 박막은 열처리를 하지 않은 것에 비해 밴드갭이 IZTO1는 3.36 eV에서 3.54 eV로, IZTO2는 3.15 eV에서 3.31 eV로 증가하였다. 반면에 Zn 함량이 증가할수록 밴드갭이 감소하는 것을 확인할 수 있었다. 이 값은 UV-Spectrometer를 이용한 광학적 밴드갭과 일치하였다. 또한 van der Pauw method를 이용한 전기적 특성 분석 결과, 열처리를 하기 전에 비하여 carrier concentration이 IZTO1는 $-4.4822{\times}10^{18}cm^{-3}$에서 $-2.714{\times}10^{19}cm^{-3}$로, IZTO2는 $-3.6931{\times}10^{17}cm^{-3}$에서 $-1.7679{\times}10^{19}cm^{-3}$로 증가하였다. 반면에 Resistivity는 IZTO1의 경우 $1.7122{\times}10^{-1}{\Omega}{\cdot}cm$에서 $5.5496{\times}10^{-3}{\Omega}{\cdot}cm$로, IZTO2는 $1.3290 {\Omega}{\cdot}cm$에서 $1.3395{\times}10^{-2}{\Omega}{\cdot}cm$로 감소하였다. 그리고 UV-Spectrometer를 이용한 광학적 특성을 측정해본 결과, 가시광선영역인 380~780 nm에서의 투과율이 83%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.368-372
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• 2006

The cobalt titanate, $CoTiO_3$ nanoparticles have been prepared by calcinations of precursor obtained from a mixture of $TiO_2$ and $Co(OH)_2$ in aqueous cetyltrimethylammonium bromide (CTAB) solution. The nanoparticles were investigated with X-ray powder diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and thermogravimetric/differential thermal analysis (TGA/DTA) to determine the crystallite size and the phase composition. The spectroscopic characterizations of these nanoparticles were also done with UV-Vis spectroscopy and FT-Raman spectroscopy. XRD patterns show that $CoTiO_3$ phase was formed at calcinations temperature above 600 ${^{\circ}C}$. UV-Vis absorption spectra indicate that the $CoTiO_3$ nanoparticles have significant red shift to the visible region (400-700 nm) with $\lambda_{max}$ = 500 nm compared to pure $TiO_2$ powder ($\lambda_{max}$ = 320 nm). The new absorption peaks (absorption at 696, 604, 520, 478,456, 383, 336, 267, 238, 208 $c m ^{-1}$), which were not appeared in FT-Raman spectra of P-25, also confirm the formation of Ti-O-Co bonds at above 600 ${^{\circ}C}$ and just not the mixtures of titanium dioxide with cobalt oxides.

• 공업화학
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• 제28권6호
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• pp.705-713
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• 2017

독창적 물질인 $Bi_2WO_6-GO-TiO_2$ 나노복합체를 쉬운 수열법에 의해 성공적으로 합성하였다. 수열반응을 하는 동안, 그래핀 시트 위에 $Bi_2WO_6$와 $TiO_2$를 도포하였다. 합성한 $Bi_2WO_6-GO-TiO_2$ 복합체형 광촉매는 X-선 회절법(XRD), 주사전자현미경(SEM), 에너지 분산 X-선(EDX) 분석, 투과전자현미경(TEM), 라만분광법, UV-Vis 확산반사 분광법(UV-vis-DRS), 및 X-선 광전자분광기(XPS)에 의하여 특성화하였다. $Bi_2WO_6$ 나노입자는 불규칙한 dark-square block 나노 플페이트 형상을 보였으며, 이산화티탄 나노입자는 퀜텀 도트 사이즈로 그래핀 시트 위 표면을 덮고 있었다. 로다민 비의 분해는 농도감소의 측정과 함께 UV 분광법에 의하여 관찰하였다. 합성된 물질의 광촉매 반응은 Langmuir-Hinshelwood 모델과 띠 이론으로 설명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.