• Korean Journal of Food Science and Technology
• /
• v.44 no.5
• /
• pp.634-637
• /
• 2012

In strawberry production, among others, the high incidence of diseases by pathogenic fungi resulting in the reduction of fruit yield and quality requires the development of eco-friendly management systems rather than chemical sprays to control them. The diameter of colonies grown in media at $25^{\circ}C$ for 5 days was measured to evaluate the in vitro inhibition of mycelial growth of 5 pathogenic fungi by irradiation with ultraviolet (UV-C, 264 nm). The mycelial growth of 5 pathogenic fungi was inhibited in potato dextrose agar (PDA) by the irradiation of UV-C for 1 hour a day, and was dramatically inhibited by the irradiation of UV-C for 9-12 h a day. The irradiation of UV-C for 9-12 h a day inhibited completely the growth of the late blight pathogen, Phytophthora cactorum. The irradiation distance of 40 to 50 cm was effective for the inhibition of mycelial growth of fungi. The mycelial growth of fungi without pre-incubation was inhibited strongly by UV-C irradiation compared to fungi pre-incubated for 2 days without light. The mycelia growth of Colletotrichum gloeosprioides and Fusarium oxysporum was inhibited strongly by UV-C irradiation in vegetable 8 juice agar compared to PDA.

• Journal of Industrial Convergence
• /
• v.19 no.6
• /
• pp.67-72
• /
• 2021

The elevator installed in the building consists of an elevator call button and an input button for selection to the target floor. The elevator button is input only when the elevator user directly presses it. Such passenger input can be infected with an infectious disease due to contamination of the button. A non-contact button is required as a means for solving this problem, which detects the proximity of an object by applying a capacitive method. It implements a function of measuring the body's body temperature by attaching an infrared heat sensor, and provides a sterilization function of a button by attaching a UV-LED. A button was selected, a body temperature was measured through an infrared temperature measurement sensor, and UV-LED was turned on and sterilized when there was no user. The contactless elevator button is expected to be effective in preventing infectious diseases as it can prevent infection of viruses carrying infectious diseases and can detect body temperature to select positive patients of CIVID 19.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.411-412
• /
• 2013

최근 UV LED는 생화학 및 의료 산업에서 많은 각광을 받고 있다. 특히, 360nm 이하의 파장대를 갖는 UV LED는 치료 기술, 센서, 물이나 공기 등의 정화와 같은 목적으로 특별한 관심이 쏠리고 있다 [1]. 이러한 지속적인 연구를 통하여 현재까지 UV LED는 거대한 성장을 이루어 왔다. 하지만 이러한 노력에도 불구하고, 360 nm 이하의 UV LED는 여전히 오믹 접촉과 전류 분산이 원활하지 못하다는 문제점을 가지고 있다. 이것은 UV LED의 외부 양자 효율을 감소시키고, 더 나아가 극도로 낮은 광 추출 효율을 초래한다. 최근 이러한 문제를 해결하고자, 투명 전도성 산화물(TCO)을 금속 전극과 p-AlGaN 사이에 삽입해주는데, 현재 가장 널리 사용되는 TCO 물질은 ITO 이다 [2]. 하지만 ITO 물질은 상대적으로 작은 밴드갭(3.3~4.3 eV)과 단파장 빛이 가지는 큰 에너지로 인하여 deep-UV 영역에서는 빛이 투과하지 못하고 대부분 흡수된다 [3]. 따라서 본 연구에서는 기존의 박막형 ITO 투명 전극에 비해 투과도 손실을 최소화할 수 있는 mesh, grid 기반의 투명전극을 연구하였다. Fig. 1과 같이 $5{\mu}m$, $10{\mu}m$, $20{\mu}m$ 간격으로 이루어진 mesh, grid 구조의 투명전극을 구현하여 투과도 손실을 최소화하면서 우수한 전기적 특성을 확보하기 위한 구조 최적화 연구를 진행하였다. 본 연구를 위해 mesh, grid 구조의 ITO 전극 패턴을 photolitho 공정으로 형성하였으며, e-beam 증착법으로 60 nm 두께의 ITO 전극을 형성 후 질소 분위기/$650^{\circ}$에서 30초 동안 RTA 공정을 진행하였다. Fig. 1에서 볼 수 있듯이 mesh, grid의 간격이 증가할수록 투명 전극이 차지하는 면적이 감소하여 투과도는 향상되는 반면, 투명 전극과 p-GaN과의 접촉 면적 또한 감소하므로 오믹 특성이 저하된다. 따라서 투과도 손실을 최소화하면서 우수한 전기적 특성을 확보하기 위해 mesh는 $20{\mu}m$, grid는 $10{\mu}m$ 간격의 구조로 각각 최적화하였다. 그 결과 박막 기반의 ITO 투명전극 대비 최대 약 10% 향상된 투과도를 확보하였으며, I-V Curve 결과를 통하여 p-GaN 기판과 mesh 구조의 ITO 전극 사이에 박막 기반의 투명 전극과 비슷한 수준인 $0.35{\mu}A(@5V)$의 전기적 특성을 확보하였다. 결과적으로 mesh, grid 기반 투명전극의 구조 최적화를 통하여 p-GaN과 원활한 오믹 접촉을 형성하는 동시에 기존 박막형 ITO 투명 전극 구조보다 높은 투과도를 확보할 수 있었다.

• Journal of the Korean Ceramic Society
• /
• v.43 no.5 s.288
• /
• pp.304-308
• /
• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.23 no.1
• /
• pp.64-68
• /
• 2014

This paper introduces the use of a crown-shaped (CR) lens to effectively diffuse the light from a light-emitting diode (LED) without any loss in the light intensity, in contrast to polymer-bulb-type diffusers. The diffusion lens was designed based on the Snell's law, which describes the physical path of a ray passing through the boundary between different media. CR lenses were fabricated by polydimethylsiloxane (PDMS) casting and UV-embossing processes, which used a pre-designed metal mold and UV-curable resin, respectively. Through experiments and optical evaluations, it was verified that the newly proposed CR lens not only decreased the vertical light strength and glare effect from an LED light source but also improved the diffusion characteristics while maintaining the quality of the LED's light intensity.

• Journal of Sensor Science and Technology
• /
• v.18 no.4
• /
• pp.307-310
• /
• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• International Journal of Internet, Broadcasting and Communication
• /
• v.15 no.2
• /
• pp.157-167
• /
• 2023

As a new trend in the development of urban public spaces, the use of right-angle LED screens perfectly combines building facades with naked-eye 3D visual effects, providing designers with a brand-new creative platform. How to create a realistic naked-eye 3D effect on a right-angle LED screen and bring an immersive visual experience to the audience has become a question worth exploring. So far, production companies have yet to announce the relevant design ideas and complete production methods. In order to explore the production principle and production process of the naked-eye 3D effect of the right-angle LED screen, we summarize the basic production principle of the naked-eye 3D impact of the right-angle LED screen through case analysis. Based on understanding the production principle, the actual case production test was carried out, and a complete production process of the naked eye 3D visual effect of the right-angle led screen was tried to be provided by off-line rendering. For the problem of how to deal with image deformation, we provide two production methods: post-production software correction and UV mapping. Among them, the UV mapping method is more efficient and convenient. Referring to this paper can help designers quickly understand the production principle of the naked eye 3D effect of right-angle LED screens. The production process proposed in this paper can provide a reference for production method for related project producers.

• Journal of Biosystems Engineering
• /
• v.39 no.2
• /
• pp.87-95
• /
• 2014

Purpose: The purpose of this study was to design a variable frequency LED light system for plant factory which combined red, blue, green, white, and UV lights and controlled the ratio of the light wavelength. In addition, this study evaluated the performance of each combination of LED to verify the applicability. Methods: Four combinations of LED (i.e. Red+Blue, Red+Blue+Green, Red+Blue+White, Red+Blue+UV) were designed using five types of LED. The system was designed to control the duty ratio of each wavelength of LED by 1% interval from 0~100%, the pulse by 1Hz interval from 1~20kHz. Response characteristics of the control system, spectral distribution of each combination, light uniformity and uniformity ratio were measured to test the performance of the system. Results: Clean waveforms were measured from 10Hz to 10kHz regardless of duty ratio. Frequency distortion was observed within 5% of inflection point at frequencies above 10kHz regardless of duty ratio, but it was judged negligible. Spectra showed a normal distribution, and maximum PPF with duty ratio of 100% was $271.4{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for the Red+Blue combination. PPF of the Red+Blue+Green combination was $258.9{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, and that of the Red+Blue+White combination was $273.9{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. PPF of the Red+Blue+UV combination was $267.7{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Uniformity ratio for the area excepting border showed 0.90 for the Red+Blue and Red+Blue+White combinations, 0.87 for the Red+Blue+Green combination, and 0.88 for the Red+Blue+UV combination. The light was irradiated evenly at the area excepting border, so it was suitable for plant growing. Conclusions: From the results of this study, response characteristics of the control system, spectral distribution of each combination, light uniformity and uniformity ratio were suitable for applying into the plant factory.

• Electronics and Telecommunications Trends
• /
• v.30 no.6
• /
• pp.42-49
• /
• 2015

질화물 반도체 기반 가시광 청색 Light Emitting Diode(LED) 기술은 디스플레이의 Back Light Unit(BLU)뿐 아니라 일반 조명에 활용되며 우리 실생활에서 매우 밀접하게 사용하고 있다. 가시광보다 짧은 파장을 가지는 자외선 LED의 경우 경화기 및 위폐감지기에 기존의 유해 가스를 사용하는 자외선 램프를 대체하고 있다. 자외선 광원의 또 다른 거대 시장으로 살균 및 정화, 의료 및 바이오 응용 시장에서 자외선 램프를 대체할 수 있는 자외선 LED 기술이 활발히 발전하고 있다. 본고에서는 이들 자외선광원 시장동향과 국내외 자외선 LED의 기술동향을 파악하므로 앞으로 연구개발의 방향을 모색하고자 한다.

• Journal of the Korean Ceramic Society
• /
• v.41 no.8
• /
• pp.573-577
• /
• 2004

We have synthesized a Eu$^{2＋}$-activated Sr$_3$MgSi$_2$ $O_{8}$ blue phosphor and investigated an attempt to develop blue LEDs by combining it with a InGaN blue LED chip (Len=405 nm). The InGaN-based Sr$_3$MgSi$_2$ $O_{8}$：Eu LED Lamp shows two bands at 405 nm and 460 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the Sr$_3$MgSi$_2$ $O_{8}$：Eu phosphor. The 460 m emission band is ascribed to a radiative recombination of Eu$^{2＋}$ impurity ions in the Sr$_3$MgSi$_2$ $O_{8}$ host matrix. As a consequence of a preparation of W blue LED Lamp using the Sr$_3$MgSi$_2$ $O_{8}$：Eu blue phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/blue phosphor(1/0,202). At this time, the CIE chromaticity was x=0.1417 and y=0.0683.