• Korean Journal of Materials Research
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• v.11 no.4
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• pp.251-257
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.74-79
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• 2002

In the a rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increases. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to the environmental issue. To resolve this matter, candidates of advanced cleaning processes has been studied. One of them is to apply the electrolyzed water. In this work, Compared with surface on Si wafer with electrolyzed water cleaning and various chemicals cleaning, and analyzed Si wafer surface condition treated with elecoolyzed water by cleaning temperature and cleaning time. Especially. concentrate upon the contact angle. finally, contact angle on surface treated with cathode water cleaning is 17.28, and anode water cleaning is 34.1.