• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.70-74
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• 2013

Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.132-138
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• 2003

The effect of synthesis condition, type of starting materials, mole ratio, mixing. aging, and crystallization temperature and time, on the size of FAU-type zeolite has been studied. Different mixing route may lead to the different phase of zeolite even with the same starting materials. In general, the size of particles is smaller after aging, especially at lower aging temperature. Two step mixture gel preparation method resulted to not only the reduction of crystallization time but also that of particle size, but without the aging of two mixture gels before the preparation of the overall gel in the second step, only the crystallization time was reduced, not the particle size. The FAU-type zeolite with average particle size 0.4$\mu$m and BET surface area 838 $m^2$/g was obtained from starting materials of liquid sodium silicate, sodium aluminate, and sodium hydroxide with two step preparation of mixture gel, aging of the mixture gels in two steps, which effectively reduced the crystallization time and particle size.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Laser Solutions
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• v.6 no.2
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Mass Spectrometry Letters
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• v.6 no.1
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• pp.21-25
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• 2015

In this paper, I describe the importance of matrix spraying conditions in imaging mass spectrometry (IMS) to obtain successful imaging results. My developed matrix application methodology, which is a "two-step matrix application" sequentially combined with matrix sublimation and spraying matrix solution can provide high reproducibility and high ion yield compared with a conventional direct spraying method. However, insufficient IMS results were obtained occasionally despite the two-step method. Therefore, I wanted to characterize the methodology to continuously provide high quality data. According to my results, the sublimation time was not a strict parameter, and the most important step was the first spraying condition. This means that the extraction conditions from the tissue section and co-crystallization of the matrix were the most important factors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.