• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.276-279
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• 2015

This paper presents two 3-stage D-band stacked amplifiers developed in a $0.13-{\mu}m$ SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.72-75
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• 2007

Magnetization loss of HTS wire is strongly dependent on the critical current density and the aspect ration of the HTS wire. This paper presents the magnetization loss of stacked BSCCO wire and stacked YBCO wires which had different critical current densities. Width of the BSCCO wire was 4mm and widths of two YBCO wires were 4mm and 8mm. Single wire, two stacked three stacked and four stacked wires were fabricated and tested. Ratio of magnetization loss of BSCCO wire to YBCO wire was presented at single wire. For stacked wire, ratio of magnetization loss of single wire to stacked wire was presented. Test results shows that magnetization losses of stacked wires were greater than that of single wire at large high magnetic field above critical magnetic field.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.411-414
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• 2009

We report single and two-stacked WOLED. Two-stacked WOLED structure adopts fluorescent blue EML and phosphorescent (red+green) EML. Current efficiency, EQE and color coordinate of two-stacked WOLED are 54.5cd/A, 28.8% and CIExy (0.322, 0.345), respectively. Those of single WOLED are also 20cd/A, 10% and CIExy (0.29, 0.37), respectively. Dual-plate OLED Display (DOD) employing the single WOLED shows high aperture ratio up to 67% in 2-inch panel of which pixel size is equivalent to that of 32 inch Full HD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.27-31
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• 2014

2G HTS tapes are widely used for various electric machines. In addition, stacked or parallel connected HTS tapes are essentially used to raise transport current level for large capacity electric machines. Therefore, critical current characteristic of stacked tapes need to be studied. Recently developed 2G HTS tapes are fabricated with various defects doping so that tapes possess pinning center to improve the critical current characteristic. During this process, the critical current is determined minimum value in not perpendicular magnetic field but a specific magnetic field angle according to the reported research. However, the effects of magnetic field angle to critical current of multi-stacked 2G HTS tapes have not been examined. In this paper, field coil which is a race-track coil wound by using an HTS tape with iron-core was fabricated to apply angle adjustable magnetic field to the 2G HTS tape samples. We measured critical current of single and multi-stacked two tapes that have different characteristic depending on various magnetic field angle and magnitude in liquid nitrogen environment. Furthermore, results of single and multi-stacked tapes were compared and analyzed.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.25 no.3
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• pp.199-206
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• 2015

This paper deals with the vibration characteristics of stacked transducers composed of piezoelectric discs, which are main elements of ultrasonic sensors or actuators. The stacked transducers were devised in the sense of natural frequencies. Two- or three-layer transducers were fabricated with piezoelectric discs of different diameters. The natural frequencies were determined by the finite element analysis and they were verified by comparing them with experimental results. It appeared that the natural frequencies of the stacked piezoelectric transducers include the natural frequencies of the constituent piezoelectric discs and the natural frequencies caused by stacking. Based on these results, it would be possible to predict the vibration characteristics of the stacked piezoelectric transducers in a design process.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.250-253
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• 2003

In general, AC transport current loss of vertically stacked HTS tapes is larger than simple multiplication of single tape by stacked number. In this study we investigated the transport current and current distribution in face-to-face stacked conductor Numerical method has been developed for loss estimation and compared to the experimental works. Two results showed goof agreement each other The stacked conductor behaved like a single watching current distribution, From this point of view it is possible to suggest the other analogy to predict the transport current loss. All results were presented and checked the validities of the loss estimation.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.14-17
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• 2003

In general, AC transport current loss of vertically stacked HTS tapes is larger than simple multiplication of single tape by stacked number. In this study we investigated the transport current and current distribution in face-to-face stacked conductor Numerical method has been developed for loss estimation and compared to the experimental works. Two results showed goof agreement each other. The stacked conductor behaved like a single watching current distribution, From this point of view, it is possible to suggest the other analogy to predict the transport current loss. All results were presented and checked the validities of the loss estimation.

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.