• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.7 s.238
• /
• pp.998-1004
• /
• 2005

A nano-stereolithography (NSL) process has been developed for fabrication of 3D shell structures which can be applied to various nano/micro-fluidic devices. By the process, a complicated 3D shell structure on a scale of several microns can be fabricated using lamination of layers with a resolution of 150 nm in size, so it does not require the use of my sacrificial layer or any supporting structure. A layer was fabricated by means of solidifying liquid-state monomers using two-photon absorption (TPA) induced using a femtosecond laser processing. When the polymerization process is finished, unsolidified liquid state resins can be removed easily by dropping several droplets of ethanol fur developing the fabricated structure. Through this work, some 3D shell structures, which can be applied to various applications such as nano/micro-fluidic devices and MEMS system, were fabricated using the developed process.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.1365-1368
• /
• 2004

A scheme to control the laser power and the exposure time was studied to fabricate precise microstructures using the nanostereolithography (nSL) process. Some recent works have shown that a three-dimensional (3D) microstructure can be fabricated by the photopolymerizing process which is induced by two-photon absorption (TPA) with a femtosecond pulse laser. TPA provides the ability to confine photochemical and physical reactions within the order of laser wavelength, so neardiffraction limit features can be produced. In the nSL process, voxels are continuously generated to form a layer and then another layer is stacked in the normal direction of a plane to construct a 3D structure. Thus, fabrication of a voxel with low aspect ratio and small diameter is one of the most important parameters for fabricating precise 3D microstructures. In this work, the mechanism of a voxel formation is studied and a scheme on the control of laser power and exposure for minimizing aspect ratio of a voxel is proposed.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.25-29
• /
• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

• ETRI Journal
• /
• v.18 no.4
• /
• pp.315-338
• /
• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.2
• /
• pp.189-194
• /
• 2002

Two-photon resonant third photon ionization of atomic bromine $(4p^5\;^2P_{3/2}\;and\;^2P_{1/2})$ has been studied using a photoelectron imaging spectroscopy in the wavelength region 250 - 278 nm. The technique has yielded simultaneously both relative branching ratios to the three levels of $Br^+(^3P_2,\;^3P_{0.1}\;and^1D_2)$ with $4p^4$ configuration and the angular distributions of outgoing photoelectrons. The product branching ratios reveal a strong propensity to populate particular levels in many cases. Several pathways have been documented for selective formation of $Br^+(^3P_2)$ and $Br^+(^3P_{0.1})$ ions. In general, the final ion level distributions are dominated by the preservation of the ion core configuration of a resonant excited state. Some deviations from this simple picture are discussed in terms of the configuration interaction of resonant states and the autoionization in the continuum. The photoelectron angular distributions are qualitatively similar for all transitions, with a positive $A_2$ anisotropy coefficient of 1.0-2.0 and negligible $A_4$ in most cases, which suggests that the angular distribution is mainly determined by the single-photon ionization process of a resonant excited state induced from the third photon absorption.

• Journal of the Optical Society of Korea
• /
• v.1 no.1
• /
• pp.10-14
• /
• 1997

Single pulse laser excitation at 656 nm and successive pulse excitation at 635.2 and 648.4 nm produced blue emission at 480 nm by two-step upconversion process in Tm/sup 3+/:LaF/sub 3/. The excited-state absorption cross-section of the /sup 3/F/sub 4/ to /sup 1/G/sub 4/ transition was estimated by a looping mechanism with cross-relaxation processes. The dynamics of up-conversion andthe possibility of the photon avalanche by a pulse laser excitation were studied by numerical simulation with the rate equation model.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.225-225
• /
• 2013

Nanostructured noble metals have been attractive for their unusual optical properties and are widely utilized for various purposes. The optical properties mainly originating from collective electron oscillation can assist direct energy conversion via surface plasmon resonances. Here, we investigated the effect of surface plasmons of silver nanowires on the generation of hot electrons. It is reported that the surface plasmons of silver nanowires exhibit longitudinal and transverse modes, depending on the aspect ratio of the nanowires. In order to measure the hot electron flow through the metallic nanowires, chemically modified Au/TiO2 Schottky diodes were employed as the electric contact. The silver nanowires were deposited on a Au metal layer via the spray method to control uniformity and the amount of silver nanowire deposited. We measured the hot electron flow generated by photon absorption on the silver nanowires deposited on the Au/TiO2 Schottky diodes. The incident photon-to-current efficiency was measured a function of the photon energy, revealing two polarization modes of siliver nanowires: transverse and longitudinal modes. UV-Vis spectra exhibited two polarization modes, which are also consistent with the photocurrent measurements. Good correlation between the IPCE and UV-vis measurements suggests that hot electron measurement on nanowires on nanodiodes is a useful way to reveal the intrinsic properties of surface plasmons of nanowires.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.7
• /
• pp.999-1005
• /
• 2004

A new stamp fabrication technique for the soft lithography has been developed in the range of several microns by means of a nano-replication printing (nRP) process. In the nRP process, a figure or a pattern can be replicated directly from a two-tone bitmap figure with nano-scale details. A photopolymerizable resin was polymerized by the two-photon absorption which was induced by a femtosecond laser. After the polymerization of master patterns, a gold metal layer (about 30 ㎚ thickness) was deposited on the fabricated master patterns for the purpose of preventing a join between the patterns and the PDMS, then the master patterns were transferred in order to fabricate a stamp by using the PDMS (poly-dimethylsiloxane). In the transferring process, a few of gold particles, which were isolated from the master patterns, remained on the PDMS stamp. A gold selective etchant, the potassium iodine (KI) was employed to remove the needless gold particles without any damage to the PDMS stamp. Through this work, the effectiveness of the nRP process with the PDMS molding was evaluated to make the PDMS stamp with the resolution of around 200 ㎚.

• Journal of the Optical Society of Korea
• /
• v.1 no.2
• /
• pp.100-103
• /
• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.11a
• /
• pp.159-160
• /
• 2007