• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.36-41
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• 2016

Similarity and diversity of various quantum ring structures are investigated by classifying energy dispersions of three different structures: an electrostatic quantum ring, a magnetic quantum ring, and a magnetic-electric quantum ring. The wave functions and the eigenenergies of a single electron in the quantum ring structures are calculated by solving the Schrdinger equation without any electron-electron interaction. Magnetoconductance is studied by calculating a two-terminal conductance while taking into account the backscattering via the resonance through the states of the quantum rings at the center of a quasi-one dimensional conductor. It is found that the energy spectra for the various quantum ring structures are sensitive to additional electrostatic potentials as well as to the effects of a nonuniform magnetic field. There are also characteristics of similarity and diversity in the energy dispersions and in the single-channel magnetoconductance.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.2
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• pp.664-682
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• 2012

To improve the accuracy and enhance the applicability of existing models, this paper proposes a generalized Markov chain model for IEEE 802.11 Distributed Coordination Function (DCF) under the widely adopted assumption of ideal transmission channel. The IEEE 802.11 DCF is modeled by a two dimensional Markov chain, which takes into account unsaturated traffic, backoff freezing, retry limits, the difference between maximum retransmission count and maximum backoff exponent, and limited buffer size based on the M/G/1/K queuing model. We show that existing models can be treated as special cases of the proposed generalized model. Furthermore, simulation results validate the accuracy of the proposed model.

• Proceedings of the Korea Water Resources Association Conference
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• 2007.05a
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• pp.1277-1281
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• 2007

1차원 수치해석망은 수위관측소와 우량관측소를 경계로 광역모형을 구성하고 HEC-RAS를 이용하여 부정류 해석을 실시하였다. 그 결과로 얻은 유량과 수위자료는 2차원 해석 모형인 RMA-2의 경계조건으로 적용하였다. 또한 수치지형도를 이용하여 2차원 격자망을 구성하고 RMA-2를 적용하여 수리특성을 분석하였다. 광역모형의 구성에 의한 HEC-RAS 부정류 해석 결과 제방설치 전과 후의 수리특성의 변화는 그리 크게 나타나지 않았다. 또한 RMA-2 해석 결과 계획홍수량 초과하는 홍수에서 대상유역에서 제방설치 전과 후의 변화는 통수단면적의 감소에 따른 빠른 흐름과 수위의 변화를 가져왔으나 그 크기는 현저하지 않음을 보여준다.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.255-263
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• 2005

Migration experiments of THO and 237Np have performed through a sampled granite core in Chemlab2 probe at the Aspo hard Rock laboratory. The elution curves of THO were analysed to determine hydraulic properties such as the extent of dispersion effect according to flow rates. The retardation phenomena of the solutes were observed and described with elution curves and migration plumes. After migration test, the rock core was opened, and the remaining radioactivities on the rock fracture surfaces were measured. The transport process was simulated with a two-dimensional channel model. The mass transport process was described with three types of basic processes ; advection, sorption and matrix diffusion. By the combination of these processes, effects of each process on transport were described in terms of elution curves and migration plumes. By comparing the simulation results to the experimental one, it was possible to analyse the retardation effect quantitatively.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• 한국방재학회:학술대회논문집
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• 2010.02a
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• pp.96.2-96.2
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• 2010

본류부에서 지류부로 유입되는 흐름의 내측 벽면에는 토사나 오염물의 퇴적물침전이 발생하게 된다. 이는 개수로 분류흐름의 특성으로 인하여 이차류 흐름이 나타나는 분리구역이 발생하기 때문이다. 수치모의를 실행하여 Hsu 등(2002)과 Ramamurthy 등 (2007)의 분류흐름 수로의 결과값과 수치모의를 통한 결과를 비교하여 신뢰성이 높음을 알 수 있었다. 본 연구에서는, 분류흐름에서 발생하는 분리구역을 줄이기 위해 분류가 시작되는 본류의 수로의 크기 조절을 통하여 분리구역의 크기를 줄였다. 또한 변형으론 인한 분리구역을 줄이기 위해 본류와 지류가 만나는 모서리 지점을 곡선과 대각선으로 연결하여 유수흐름을 완만하게 만든 지형들을 제안하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.89-95
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• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.