• Journal of Korea Water Resources Association
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• v.32 no.2
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• pp.131-142
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• 1999

In this study, one and semi-two dimensional numerical models were applied to study on the hydraulic and sedimentologic characteristics of upstream and downstream channel section near the Buyeo intake towers. The HEC-6 model was applied for the simulation of one dimensional sediment movement from 1988 to 1996, and GSTARS model was applied for the simulation of semi-two dimensional sediment movement for the same period. After the verification of accuracy of HEC-6 and GSTARS models, the models were applied again to predict the sediment movement near intake towers from 1988 to 2001. In this case, measured channel section of 1988 was used as an initial channel condition, and used to predict the long-term variation of channel section of 2001 after 13 years since 1988. The simulation results show that the channel bed is sedimented and eroded repeatedly in the main channel of overall study area, and that channel bed is getting elevated in the near Buyeo intake towers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.17-28
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• 1995

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

• Journal of Ocean Engineering and Technology
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• v.10 no.3
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• pp.50-61
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• 1996

The breaking phenomenon of regular periodic waves generated by a numerical wave maker is simulated by finite-difference method which can cope with strong interface motions. The air and water flows are simultaneously solved in the time-marching solution procedure for the Navier-Stokes equation. A density-function technique is devised for the implemenation of the interface conditions. The accuracy is examined and applied to the simulation of two-dimensional breaking phenomena of periodic gravity waves.

• Bulletin of the Korean Mathematical Society
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• v.50 no.6
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• pp.2035-2051
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• 2013

In this paper, we study numerical schemes for solving multi-dimensional option pricing problem. We compare the direct solving method and the Operator Splitting Method(OSM) by using finite difference approximations. By varying parameters of the Black-Scholes equations for the maximum on the call option problem, we observed that there is no significant difference between the two methods on the convergence criterion except a huge difference in computation cost. Therefore, the two methods are compatible in practice and one can improve the time efficiency by combining the OSM with parallel computation technique. We show numerical examples including the Equity-Linked Security(ELS) pricing based on either two assets or three assets by using the OSM with the Monte-Carlo Simulation as the benchmark.

• Wind and Structures
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• v.4 no.2
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• pp.85-100
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• 2001

The mechanism of wind-induced ovalling vibrations of cylindrical shells is numerically investigated by using a vortex method. The subject of this paper is limited to a two-dimensional structure in the subcritical regime. The aerodynamic stability of the ovalling vibrations in the second to fourth circumferential modes is discussed, based on the results of a forced-vibration test. In the analysis, two modal configurations are considered; one is symmetric and the other is anti-symmetric with respect to a diameter parallel to the flow direction. The unsteady pressures acting on a vibrating cylinder are simulated and the work done by them for one cycle of a harmonic motion is computed. The effects of a splitter plate on the flow around the cylinder as well as on the aerodynamic stability of the ovalling vibrations are also discussed. The consideration on the mechanism of ovalling vibrations is verified by the results of a free-vibration test.

• Smart Structures and Systems
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• v.4 no.2
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• pp.137-152
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• 2008

The work presented in this paper includes material characterisation and an investigation of suitability in seismic dampers for two commercially available NiTi-alloys, along with a numerical analysis of a new damper system employing composite NiTi-wires. Numerical simulations of the new damper system are conducted, using Brinson's one-dimensional constitutive model for shape memory alloys, with emphasis on the system's energy dissipation capabilities. The two alloys tested showed some unwanted residual strain at temperatures higher than $A_f$, possibly due to stress concentrations near inclusions in the material. These findings show that the alloys are not ideal, but may be employed in a seismic damper if precautions are made. The numerical investigations indicate that using composite NiTi-wires in a seismic damper enhances the energy dissipation capabilities for a wider working temperature range.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.294-301
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• 2011

A two-dimensional hybrid flaw solver has been developed for the accurate and efficient simulation of steady and unsteady flaw fields. The flow solver was cast to accommodate two different topologies of computational meshes. Triangular meshes are adopted in the near-body region such that complex geometric configurations can be easily modeled, while adaptive Cartesian meshes are, utilized in the off-body region to resolve the flaw more accurately with less numerical dissipation by adopting a spatially high-order accurate scheme and solution-adaptive mesh refinement technique. A chimera mesh technique has been employed to link the two flow regimes adopting each mesh topology. Validations were made for the unsteady inviscid vol1ex convection am the unsteady turbulent flaws over an NACA0012 airfoil, and the results were compared with experimental and other computational results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.72-75
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• 2009

Design and Manufacturing processes of Ti-6Al-4V profiled ring-products were investigated with three-dimensional FEM simulation and experimental analyses. FEM simulation for the ring-rolling process was used to calculate the state variables such as strain, strain rate and temperature. In the simulation results of strain and temperature distributions for a plane ring rolling process, the strain level at the surface area is higher than that at the mid-plane, but the temperature level at the surface area is lower than that at mid-plane due to heat transfer between the workpiece and the work roll. These distributions showed a great influence on the evolution of microstructure in different positions. In order to induce the uniform deformation of the profile ring and reduce the applied load, the final blank was prepared by two-step processes. The mechanical properties of Ti-6Al-4V alloy ring products made in this work were investigated with tensile and impact tests and analyzed with the evolution of microstructures during the ring rolling process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.7
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• pp.873-881
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• 1997

A numerical simulation has been carried out for three-dimensional turbulent flows around an Ahmed body. The Reynolds-averaged Navier-Stokes equation is solved with the SIMPLE method in general curvilinear coordinates system. Several k-.epsilon. turbulence models with two convective difference schemes are evaluated for the performance such as drag coefficient, velocity and pressure fields. The drag coefficient, the velocity and pressure fields are found to be changed considerably with the adopted k-.epsilon. turbulence models as well as the finite difference schemes. The results of simulation prove that the RNG k-.epsilon. model with the QUICK scheme predicts fairly well the tendency of velocity and pressure fields and gives more reliable drag coefficient. It is also demonstrated that the large difference between simulations and experiment in the drag coefficient is due to relatively high predicted values of pressure drag from vertical rear end base.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.