• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.12
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• pp.632-640
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• 2003

In conventional Zero-Voltage-Transition(ZVT) PWM converters, zero-voltage turn-on and turn-off for main switch without increasing voltage/current stresses is achieved at a fixed frequency. The switching loss, stress, and noise, however, can't be minimized because they adopt auxiliary switches turned off under hard-switching condition. In this paper, new ZVS-PWM converters of which both active and passive switches are always operating with soft-switching condition are proposed. Therefore, the proposed ZVS-PWM converters are most suitable for avionics applications requiring high-power density. Breadboarded ZVS-PWM boost converters using power MOSFET are constructed to verify theoretical analysis.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.265-268
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• 1998

This paper presents a soft-switching average current control PWM high power factor boost converter. Conventional boost ZVT-PWM converter has a disadvantage of hard-switching for auxiliary switch at turn-off. A soft switched auxiliary switch is proposed to achieve a high performance ZVT-PWM boost rectifier. The simulation and experimental results show that soft switching operation can be maintained for wide line and load range, which in turn improves the converter performance in terms of efficiency, switching noise and circuit reliability.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.2
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• pp.79-85
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• 2001

In this paper, a novel Zero-Current-Transition (ZCT) technique, which provides Zero-Current-Switching (ZCS) turn-off of the main switch, the main diode and the auxiliary switch, is presented. The proposed auxiliary circuit consists of minimum elements only one auxiliary switch, resonant inductor and resonant capacitor. Also the reduced di/dt, which is obtained by resonant inductor, helps soft turn-on of the main switch. Besides, to eliminate the additional conduction loss and current stress on main switch, a topological variation was performed. The theoretical analysis and the operation principle of the new ZCT techniques are described in detail with a boost converter as an example. To verify the validity of the proposed ZCT techniques, the simulation and the experiment were performed under 1kW output power and 100kHz switching frequency.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.12B no.1
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• pp.37-43
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• 2002

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5㎾ prototype boost converter operating at 40KHz.

• Journal of Power Electronics
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• v.1 no.2
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• pp.71-77
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• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of DC to DC PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of DC to DB PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype converter operating at 40 kHz.

• Proceedings of the KIEE Conference
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• summer
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• pp.1226-1228
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• 2004

A novel lossless passive snubber is proposed for soft switching the boost type converters. The proposed snubber does not use any auxiliary switches. but uses two identical snubber capacitors which are charged in parallel at turn off of the main switch and discharged in series at turn on automatically, and the discharged energy is recovered effectively (more than $95[\%]$ recovery) into the output capacitor. Thus, the snubber provides zero voltage switching for the converter main switch, reducing both the turn off losses and the electromagnetic interference(EMI) noise, whitch improves the converter performance. The experimental results of a 20[kHz] 600[W] DC-DC boost converter and a single-phase AC-DC boost rectifier with the new snubber are presented.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.275-285
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• 2014

Dipyrene-based fluorescent chemosensor(분자 1)가 개발되었다. 분자 1은 여러 금속이온 중 $Cu^{2+}$와 $Hg^{2+}$의 fluorescent chemosensor로서 센싱할 수 있고, excimer-switch off mechanism에 따라 $Cu^{2+}$와 $Hg^{2+}$ 금속이온을 감지한다. Ground state와 excited state에 대한 DFT와 TD-DFT 방법을 통해 분자 1의 $Hg^{2+}$에 대한 형광 turn on/off을 확인하고, 구조변화에 따른 molecular orbital을 계산하였다. 계산결과 분자 1은 excited state에서 excimer를 형성할 수 있으나 $1+Hg^{2+}$는 excimer를 형성하지 못함을 알 수 있었다. 여기서 우리는 분자 1과 $Hg^{2+}$ 금속이온 결합에 대하여 실험값과 비교 분석하여 그 메커니즘 조사하였다.

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.28-32
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• 1998

This paper presents novel ZVZCS PWM DC-DC converters. The proposed soft-switching technique achieves ZVS and ZCS simultaneously at both turn-on and turn-off of the main switch and diode by using only one auxiliary switch. Also, the proposed soft-switching technique is suitable for not only minority but also majority carrier semiconductor devices. The auxiliary circuit of the proposed topology is placed out the main power path and therefore, there are no voltage/current stresses on the main switch and diode. The operating principle of the proposed circuit is illustrated by a detailed study with the boost converter as an example. The validity of the proposed converter is verified by theoretical analysis, simulation and experiment results.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.211-214
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• 2001

This paper introduces a ZC-ZVS PWM(Pulse-Width -Modulation) boost converter. The IGBT(main switch) of the proposed converter is always switched at ZCS and soft switching of MOSFET(auxiliary switch) as well. Therefore, the proposed converter minimized the turn on/turn off switching losses of switches and reduced conduction losses by using IGBT switch. Moreover, using paralleled IGBT-MOSFET switch overcame the switching frequency limitation. Therefore high power density system can be realized. As mentioned above, the characteristics are verified through experimental results.

• Tribology and Lubricants
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• v.31 no.3
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• pp.125-140
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• 2015

In this paper, we present the results of the wear analysis of journal bearings on a stripped-down single-cylinder engine during start-up and coast-down by motoring. We calculate journal bearing wear by using a modified specific wear rate considering the fractional film defect coefficient and load-sharing ratio for the asperity portion of a mixed elastohydrodynamic lubrication (EHL) regime coupled with previously presented graphical data of experimental lifetime linear wear in radial journal bearings. Based on the calculated wear depth, we obtain a new oil film thickness for every crank angle. By examination of the oil film thickness, we determine whether the oil film thickness at the wear scar region is in a mixed lubrication regime by comparing dimensionless oil film thickness, h/σ, to 3.0 at every crank angle. We present the lift-off speed and the crank angles involved with the wear calculation for bearings #1 and #2. The dimensionless oil film thickness, h/σ, illustrates whether the lubrication region between the two surfaces is still within the bounds of the mixed lubrication regime after scarring of the surface by wear. In addition, we present in tables the asperity contact pressure, the real minimum film thickness at the wear scar region, the modified specific wear rate, and the wear angle, α, for bearings #1 & #2. To show the real shape of the oil film at wear scar region, we depict the actual oil film thickness in graphs. We also tabulated the ranges of bearing angles related with wear scar. We present the wear volume for bearings #1 and #2 after one turn-on and turn-off of the engine ignition switch for five kinds of equivalent surface roughness. We show that the accumulated wear volume after a single turn-on and turn-off of an ignition switch normally increases with increasing surface roughness, with a few exceptions.