• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.600-606
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• 1992

The series connection of power switching semiconductor elements is essential when a high voltage converter is made, so researches are being conducted to further develop this technology. In the series connection of power switching semiconductor elements, the main problem is that simultaneous conduction at turn-on and simultaneous blocking at turn-off together with voltage balancing are unattainable because of the difference of their switching characteristics. In this paper a novel series connection algorithm is proposed, which can implement not only the synchronization of the points of turn-on and turn-off time but the dynamic voltage balancing in spite of the difference of each switching characteristics. The proposed method is that the compensated control signal is attained from the voltage feedback signal and applied to the series-connected power transistors independently. Computer simulation and experimental results verify its validity.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.3
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• pp.240-245
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• 2004

This paper presents a Switched Reluctance Motor(SRM) drive using the self-tuning control method to achieve the maximum torque. SRM has the difficulty to research it by an analytic method and to control the speed End torque because of the high nonlinearity. So, in this paper, the self-tuning control method is applied to relevantly controlling turn-on/off angle to operate at the maximum torque. Also, the feedback signals to control the turn-on/off angle are the encoder pulse and the increment of phase current. At first, n adequate turn-off angle is searched by itself and then a turn-on angle is done. As the relationship between turn-on and him-off angle is mutual dependent, the turn-on/off angle is controlled by a real time self-tuning control method in order to maintain the maximum torque. The proposed self-tuning Algorithm is verified by experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.562-567
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• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.4
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• pp.477-482
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• 2012

This paper describes a new rotor position sensorless control method for SRM drives based on an improved simplified flux linkage method. In the traditional simplified flux linkage method, every phases take turns conduction and current chopping control method is used. Every phases take turns conduction means turning on the incoming working phase while turning off the working phase. This conduction mode causes coupling between turn-on and turn-off angles, which goes against optimal efficiency or torque ripple minimization with sensorless speed control. In the improved simplified flux linkage method, turn-off angle is calculated by flux loop, the turn-on angle can be given arbitrarily and has no relations with the turn-off angle, and the current chopping control method is used. The speed and rotor position can be estimated then. Finally, a sensorless SRM speed control system and an experiment platform with DSP are built and validity of this method is confirmed.

• Journal of Power Electronics
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• v.19 no.2
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• pp.353-362
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• 2019

To address the problem of circulating current loss in the traditional zero-current switching (ZCS) full-bridge (FB) DC/DC converter, a ZCS FB DC/DC converter topology and modulation strategy is proposed in this paper. The strategy can achieve ZCS turn on and zero-voltage and zero-current switching (ZVZCS) turn off for the primary switches and realize ZVZCS turn on and zero-voltage switching (ZVS) turn off for the auxiliary switches. Moreover, its resonant circuit power is small. Compared with the traditional phase shift full-bridge converter, the new converter decreases circulating current loss and does not increase the current stress of the primary switches and the voltage stress of the rectifier diodes. The diodes turn off naturally when the current decreases to zero. Thus, neither reverse recovery current nor loss on diodes occurs. In this paper, we analyzed the operating principle, steady-state characteristics and soft-switching conditions and range of the converter in detail. A 740 V/1 kW, 100 kHz experimental prototype was established, verifying the effectiveness of the converter through experimental results.

• Journal of Information Display
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• v.10 no.1
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• pp.16-18
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• 2009

A three-terminal hybrid-aligned nematic liquid crystal (3T-HAN LC) cell capable of fast turn-off switching is proposed in this paper. By employing the relaxation process initiated by an electric-field pulse, a fast turn-off time of less than 1 ms can be obtained through optically hidden relaxation. A low operating voltage and high transmittance were confirmed through simulations and experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.3
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• pp.222-230
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• 1998

This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1527-1536
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• 2014

This paper investigates the optimal values of turn-on and turn-off angles, and ratio of flux linkage at turn-off angle and peak phase current positions of optimal control for accomplishing maximum output power in an 8/6 Switched Reluctance Generator (8/6 SRG). Phase current waveform is analyzed to determine optimal excitation angles (optimal turn-on and turn-off angles) of the SRG for maximum output power which is applied from a nonlinear magnetization curve in terms of control variables (dc bus voltage, shaft speed, and excitation angles). The optimal excitation angles in single pulse mode of operation are proposed via the analytical model. Simulated and experimental results have verified the accuracy of the analytical model.