• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.23-32
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• 2006

Fast and accurate power bus design (FAPUD) method for multi-layers high-speed digital boards is devised for the power supply network design tool for accurate and precise high speed board. FAPUD is constructed, based on two main algorithms of the PBEC (Path Based Equivalent Circuit) model and the network synthesis method. The PBEC model exploits simple arithmetic expressions of the lumped 1-D circuit model from the electrical parameters of a 2-D power distribution network. The circuit level design based on PBEC is carried with the proposed regional approach. The circuit level design directly calculates and determines the size of on-chip decoupling capacitors, the size and the location of off-chip decoupling capacitors, and the effective inductances of the package power bus. As a design output, a lumped circuit model and a pre-layout of the power bus including a whole decoupling capacitors are obtained after processing FAPUD. In the tuning procedure, the board re-optimization considering simultaneous switching noise (SSN) added by I/O switching can be carried out because the I/O switching effect on a power supply noise can be estimated over the operation frequency range with the lumped circuit model. Furthermore, if a design changes or needs to be tuned, FAPUD can modify design by replacing decoupling capacitors without consuming other design resources. Finally, FAPUD is accurate compared with conventional PEEC-based design tools, and its design time is 10 times faster than that of conventional PEEC-based design tools.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.331-337
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• 2006

Cavity-type beam position monitors were developed in collaboration with KEK to use for the future accelerators such as international linear collider (ILC) or x-ray free electron laser (XFEL) in PAL. BPM components such as BPM cavity, beam tubes, waveguides and feedthroughs were assembled by brazing at the same time to reduce mechanical errors during the fabrication. There are four screwed pins around outer rim of the cavity for the tuning of cavity frequency and x-y isolation. The resonance frequency of BPM is 6.422 GHz, the inner diameter of cavity is 53.822 mm, and the range of mechanical adjusting is $+ / - 250{\mu}m$. The x-y isolation was measured better than -40 dB after tuned. Test results of signal forms, x-y isolations, sensitivities are satisfied within requirements for the KEK ATF2 beam line.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.12 s.103
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• pp.1179-1185
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• 2005

In this paper, novel internal antenna with its controllable resonant frequency is presented for triple-band or over mobile handsets. The operating range can include GSM(880${\~}$960 MHz), GPS(1,575$\pm$10 MHz), DCS(1,710${\~}$1,880 MHz), US-PCS(1,850${\~}$l,990 MHz), and W-CDMA(1,920${\~}$2,170 MHz). The proposed antenna is realized by combination of a half wavelength loaded line and a shorted monopole. A single shorting and feeding points are used and they are common to both antenna structures. By controlling a value of lumped inductance element between shorting point and ground plane, the antenna provides enough bandwidth to cover DCS, US-PCS, and W-CDMA respectively. When these higher bands are controlled by the values of inductance, resonant characteristics in GSM and GPS bands are maintained. In this work, maximum value of the inductor is limited within 3.3 nH to mitigate gain degradation from frequency tuning. As a result, measured maximum gain of antenna is -0.58${\~}$-0.30 dBi in the GSM band, -0.57${\~}$0.43 dBi in the GPS band and 0.38${\~}$1.15 dBi in the DCS/US-PCS/W-CDMA band. In higher band, the proposed antenna is certified that resonant frequency of about 240 MHz can be effectively controlled within gain variation of about 0.77 dB by simulation and measurement.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1081-1088
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• 2013

Two new metal-free organic dyes bridged by anthracene-mediated ${\pi}$-conjugated moieties were successfully synthesized for use in a dye-sensitized solar cell (DSSC). A N,N-diphenylthiophen-2-amine unit in these dyes acts as an electron donor, while a (E)-2-cyano-3-(thiophen-2-yl)acrylic acid group acts as an electron acceptor and an anchoring group to the $TiO_2$ electrode. The photovoltaic properties of (E)-2-cyano-3-(5-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)thiophen-2-yl)acrylic acid (DPATAT) and (E)-2-cyano-3-(5'-((10-(5-(diphenylamino)thiophen-2-yl)anthracen-9-yl)ethynyl)-2,2'-bithiophen-5-yl)acrylic acid (DPATABT) were investigated to identify the effect of conjugation length between electron donor and acceptor on the DSSC performance. By introducing an anthracene moiety into the dye structure, together with a triple bond and thiophene moieties for fine-tuning of molecular configurations and for broadening the absorption spectra, the short-circuit photocurrent densities ($J_{sc}$), and open-circuit photovoltages ($V_{oc}$) of DSSCs were improved. The improvement of $J_{sc}$ in DSSC made of DPATABT might be attributed to much broader absorption spectrum and higher molecular extinction coefficient (${\varepsilon}$) in the visible wavelength range. The DPATABT-based DSSC showed the highest power conversion efficiency (PCE) of 3.34% (${\eta}_{max}$ = 3.70%) under AM 1.5 illumination ($100mWcm^{-2}$) in a photoactive area of $0.41cm^2$, with the $J_{sc}$ of $7.89mAcm^{-2}$, the $V_{oc}$ of 0.59 V, and the fill factor (FF) of 72%. In brief, the solar cell performance with DPATABT was found to be better than that of DPATAT-based DSSC.

• Geophysics and Geophysical Exploration
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• v.17 no.4
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• pp.216-230
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• 2014

Based on the interpretation of 3D seismic profiles acquired in the northwestern area of the Ulleung Basin, East Sea, the shallow sediments consist of five seismic units separated by regional reflectors. An anticline is present in the study area that documents activity of many faults. Bottom simulating reflectors are characterized by high RMS amplitude. Acoustic blanking with low RMS amplitude is distinctively recognized in the gas hydrate stability zone. Seismic attribute analysis shows that if gas hydrates are underlain by free gas, the high reflection strength and the low instantaneous frequency are displayed below the boundary between them. Whereas, if not, the reflection strength is low and instantaneous frequency is high continuously below the gas hydrate zone. Based on the spectral decomposition of the bottom simulating reflector, the high envelope at the specific high frequency range indicates the generation of the tuning effect due to the lower free gas content. Four models for the occurrence of the gas hydrate are suggested considering the slope of sedimentary layers as well as the presence of gas hydrate or free gas.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.94-100
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• 2014

In this paper, a design of low power Current-Reuse Voltage Controlled Oscillator (VCO) which has wide tuning range about 1.95 GHz ~ 3.15 GHz is presented. Class-C type is applied to improve phase noise and 2-Step Auto Amplitude Calibration (AAC) is used for minimizing the imbalance of differential VCO output voltage which is main issue of Current-Reuse VCO. The mismatch of differential VCO output voltage is presented about 1.5mV ~ 4.5mV. This mismatch is within 0.6 % compared with VCO output voltage. Proposed Current-Reuse VCO is designed using CMOS $0.13{\mu}m$ process. Supply voltage is 1.2 V and current consumption is 2.6 mA at center frequency. The phase noise is -116.267 dBc/Hz at 2.3GHz VCO frequency at 1MHz offset. The layout size is $720{\times}580{\mu}m^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.819-826
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• 2002

In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.