• Title/Summary/Keyword: Tuning Range

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Comparativy Characteristics between Microstrip-Line Resonator(HR) and Dielectric Resonator(DR) for Injection-Locked Oscillators (ILOs)

  • Kim, Nam-Young;Kim, Jong-Heon;Hong, Ui-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.239-244
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    • 1997
  • A hair-pin shaped microstrip-line resonator and a dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their characteristics. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator; the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

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Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes (파장가변 Sampled-grating Distributed Bragg Reflector (SG-DBR) 레이저 다이오드 제작)

  • 이지면;오수환;고현성;박문호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.16-20
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    • 2004
  • We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

Low Phase Noise Series-coupled VCO using Current-reuse and Armstrong Topologies

  • Ryu, Hyuk;Ha, Keum-Won;Sung, Eun-Taek;Baek, Donghyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.42-47
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    • 2017
  • This paper proposes a new series-coupled voltage-controlled oscillator (VCO). The proposed VCO consists of four current-reuse Armstrong VCOs (CRA-VCOs) coupled by four transformers. The series-coupling, current-reuse, and Armstrong topologies improve the phase noise performance by increasing the negative-Gm of the VCO core with half the current consumption of a conventional differential VCO. The proposed VCO consumes 6.54 mW at 9.78 GHz from a 1-V supply voltage. The measured phase noise is -115.1 dBc/Hz at an offset frequency of 1 MHz, and the FoM is -186.5 dBc/Hz. The frequency tuning range is from 9.38-10.52 GHz. The core area is $0.49mm^2$ in a $0.13-{\mu}m$ CMOS process.

Development of Wavelength Swept Laser by using the two SOAs parallel configuration (SOA 2개의 병렬연결을 통한 파장 가변 레이저 개발)

  • Kim, Hoon-Sup;Eom, Jin-Seob
    • Journal of Industrial Technology
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    • v.28 no.B
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    • pp.235-238
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    • 2008
  • In this paper, we have developed wavelength swept laser system for the swept source optical coherence tomography(SS-OCT). A laser is constructed by using the two SOAs parallel configuration, fiber Fabry-Perot tunable filter(FFP-TF). The wavelength sweeps are repetitively generated with the repetition period of 50Hz. The wavelength tuning range of the laser is more than FWHM of 80nm centered at the wavelength of 1310nm and the line-width of the source is 0.12 nm.

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Acquirement of cross-sectional image by using wavelength swept laser within the two SOAs parallel configuration (병렬 SOA 구조의 파장가변 레이저를 이용한 단면 영상획득)

  • Kim, Hoon-Sup;Eom, Jin-Seob
    • Journal of Industrial Technology
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    • v.28 no.B
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    • pp.239-244
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    • 2008
  • We have realized the swept source optical coherence tomography(SS-OCT) by using the self-fabricated wavelength swept laser(wavelength tuning range : 80nm, line-width : 0.12nm, wavelength sweeping rate : 50Hz). In addition, we have used the dual balanced detector that could make a mirror image in OCT display suppressed. We can also fabricate the comb filter of Michelson interferometer type for fast-signal processing in OCT. Using this SS-OCT system for measuring an mirror, a 1mm-depth glass and an onion, we confirmed that the in vivo epidermal cross-sectional images for them can be obtained appropriately.

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A Compact Tunable Bandpass Filter Using Coupled Metamaterial Resonators with Varactor Diode

  • Kim, Gi-Rae
    • Journal of information and communication convergence engineering
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    • v.8 no.5
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    • pp.484-488
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    • 2010
  • In this paper, we present a novel tunable microstrip bandpass filter based on split ring resonators (SRRs). The varactors are reverse-biased semiconductor diode, and are connected between the concentric rings of the SRR. An individual varactor loaded SRR based bandpass tunable filter module is analyzed. Then a second order tunable filter with 7% fractional bandwidth and a tuning range from 2.75 to 2.86 GHz is assembled from basic filter modules. The simulator HFSS (V10) is used to design the tunable filter and to simulate. The results show good characteristics is created.

Low temperature plasma deposition of microcrystalline silicon films for bottom gate thin film transistors

  • Cabarrocas, P.Roca i;Djeridane, Y.;Abramov, A.;Bui, V.D.;Bonnassieux, Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.56-60
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    • 2006
  • We review our studies on the growth of microcrystalline silicon films by the standard PECVD technique. In situ spectroscopic ellipsometry studies allow the optimization of the complex film structure with respect to competing aspects of the growth process. Fine tuning the hydrogen flux, the ion energy, and the nature of the species contributing to deposition produces unique films with a fully crystallized interface with silicon nitride. These materials have been successfully incorporated in bottom gate TFTs which present mobility values in the range of 1 to 3 $cm^2/V.s$, and stable characteristics when submitted to a bias stress. The stability of these TFTs makes them suitable for driver applications in AMLCDs as well as pixel elements in OLED displays.

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A Predictive Controller Based on the Generalized Minimum Variance Approach (일반화 최소분산법을 기초로 한 예측 제어기)

  • 한홍석;양해원
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.37 no.8
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    • pp.557-562
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    • 1988
  • This paper presents a class of discrete adaptive controller that can be applied to a plant without sufficient a priori information. It is well known that the GMV(Generalized Minmum Variance) contrlller performs satisfactorily if the plant time delay is known. By introducing the long-range prediction into the GMV controller, robustness to the time delay can be improved, although optimality is lost. Such an idea motivates a predictive control system to be proposed here, where the system minimizes multi-stage cost via the GMV approach. Moreover, the detuning control weight is determined by an on-line tuning method. It is shown that robustness, computational efficiency, and performance of the resulting control system are improved as compared with those of the GPC(Generalized Predictive Control)system.

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A 10-GHz Band LC-CMOS QVCO (10 GHz 대역 LC-CMOS QVCO)

  • Koo, Kwang-Hoe;Kim, Chang-Woo
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.417-418
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    • 2008
  • A quadrature voltage controlled oscillator(QVCO) with MOS-varactors has been fabricated for X-band applications. The QVCO consists of two cross -coupled differential cores and buffer amplifiers, which has fabricated in TSMC $0.18{\mu}m$ CMOS process. The QVCO exhibits a frequency tuning range from 8.38 GHz to 10.62 GHz. The phase noise is -88 dBc/Hz at 1 MHz-offset frequency. The total bias current is 25 mA including four buffer amplifiers.

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$0.18{\mu}m$ CMOS Quadrature VCO for IEEE 802.11a WLAN Application

  • Son, Chul-Ho;Kim, Bok-Ki
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.529-530
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    • 2008
  • The proposed CMOS Quadrature VCO for WLAN application was designed in TSMC $0.18\;{\mu}m$ RF CMOS technology. The QVCO based on NMOS back-gate as a coupling transistor and switched capacitors array without tail transistors is designed to generate quadrature output signals. The simulated results show that the QVCO core consumed 3.67 mA and 6.6 mW from a 1.8 V supply. The QVCO is tunable between $4.76\;GHz\;{\sim}\;6.35\;GHz$ and has a phase noise lower than -116.8 ㏈c/Hz at 1 MHz offset over the entire tuning range

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