• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.654-655
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• 2006

This is about the effects deoxidization, carbonization and alloying preparation on fine grain W, WC, and grade YG8 powder reduced by "yellow tungsten oxide" and "blue tungsten oxide". The result indicates that yellow tungsten has single composition and blue tungsten oxide has complex composition. With this feature, yellow tungsten oxide got better uniformity and concentration distribution on fine particle size W and WC powder than blue tungsten oxide's. The grade alloy YG8 that made of this W or WC powder has uniform alloy construction, concentrated WC grain distribution and better alloy properties.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Journal of the Korean Chemical Society
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• v.61 no.3
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• pp.97-103
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• 2017

In this study, the functional hydrogel ophthalmic lens containing tungsten oxide nanoparticles, 2,4-dihydroxy benzophenone and 2-hydroxy-4-(methacryloyloxy) benzophenone were manufactured. HEMA (2-hydroxyethyl methacrylate), MMA (methyl methacrylate), AA(acrylic acid), the cross-linker EGDMA (ethylene glycol dimethacrylate), the initiator AIBN (azobisisobutyronitrile) and the functional additives including tungsten oxide nanoparticles, 2,4-dihydroxy benzophenone, and 2-hydroxy-4-(methacryloyloxy) benzophenone were used respectively. The measurements of water content and refractive index of the sample was decreased and increased, respectively. And also, the UV transmittance of produced lens containing 2,4-dihydroxy benzophenone, 2-hydroxy-4-(methacryloyloxy) benzophenone and tungsten oxide nanoparticles was measured. Based on the results of this study, it is judged that the performance improvement increased over time when 2-hydroxy-4-(methacryloyloxy) benzophenone was used as an additive, while the use of tungsten oxide nanoparticles influenced on blue-ray-blocking effect of the hydrophilic lens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.680-686
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• 2013

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

• Applied Chemistry for Engineering
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• v.4 no.4
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• pp.798-806
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• 1993

In this study we developed the synthesis of high purity tungsten oxide from tungsten chlorides obtained by the chlorination of scheelite in a fluidized bed reactor. Within a minute of dissolution time, tungsten chlorides were almost dissolved in $H_2O_2$ solution. The proper dissolution conditions for the tungsten chlorides were as follows : $H_2O_2$ concentration 0.5%, dissolution temperature $15^{\circ}C$ and $H_2O_2$ amount to 0.5g tungsten chlorides 30ml. Under above conditions, the tungsten oxide prepared from dissolved product was identified as $WO_3$ and the purity of $WO_3$ was 99.53%.

• Particle and aerosol research
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• v.5 no.4
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• pp.153-158
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• 2009

Tungsten carbide powder was fabricated with carbothermal reaction by pulsed electric current flowing in compact of tunsten oxide and carbon. The mixed powder of tunsten oxide and carbon was ball-milled into ultrafine powders. The mixed powder of tungsten oxide and carbon was put into carbon mold and heat-treated at $1050{\sim}1200^{\circ}C$ by pulsed electric current flowing. The formation of tungsten carbide powder could be achieved by heat treatment at $1200^{\circ}C$ for 10 minitues.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.113-117
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• 2003

To reduce the doming of the shadow mask due to thermal expansion and to prevent the color discrepancy, the electron reflecting layer with lead tungsten oxides on the electron gun side of shadow mask was formed by screen printing method and doming property was evaluated in CRT. First, the lead tungsten oxides were prepared by calcining the mixture of lead oxide and tungsten oxide above 600$^{\circ}C$. Second, the paste which has the anti-doming composition including the lead tungsten oxides was coated by screen-printing method. As a result, the doming of the shadow mask was reduced about from 30 to 45%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.