• Journal of Welding and Joining
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• v.19 no.1
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• pp.33-39
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• 2001

The welding quality by Gas Tungsten Arc Welding shows very high level, but the welding speed is lower than that of gas metal arc welding. Also, the welding quality by automatic GTAW is variable as the arc characteristics is changed by the consumption of electrode tip. The purpose of this study is to investigate the relation between the properties of tungsten electrode tip and the various arc characteristics at high current region. In this study, the high welding current 200A was applied to the repeated arc start test and long term arcing test using the $\phi$3.2 tungsten electrodes with cone angle 30$^{\circ}$, 45$^{\circ}$, 60$^{\circ}$sharp tip, and 60$^{\circ}$surface polished (S.P.) sharp tip. It was confirmed that the maximum arc pressure by the initial electrode condition was highest in 45$^{\circ}$sharp tip, and the next in 60$^{\circ}$sharp tip, the last was in 30$^{\circ}$sharp tip and 60$^{\circ}$S.P.. But, the maximum arc pressure after the repeated arc start test and long term arcing test was decreased considerably. But, the maximum arc pressure was highest also in 45$^{\circ}$ sharp tip after the tests, the next was in 30$^{\circ}$sharp tip, and the last was in 60$^{\circ}$sharp tip and 60$^{\circ}$S.P.. The arc start characteristics was the most excellent in 60$^{\circ}$S.P., By long term arcing test, the lanthania included in tungsten electrode was extinguished at tip surface preferentially, therefore the arc characteristics of electrode tip got worse.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.68-72
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• 2004

The performance of copper-tungsten for electrodes used in an ultra high voltage interruption system was evaluated by means of an interruption test, which requires a large-scale apparatus and high cost. In this study, prior to the interruption test, the characteristics of a Cu-W electrode were estimated through the DC arc test, which is a simple, low cost procedure. The DC arc characteristics of a 20wt%Cu-80wt%W electrode were investigated with the change of tungsten powder size distribution and the addition of nickel. In specimens containing a high volume fraction of large sized tungsten particles, the relative density and hardness of sintered Cu-W electrodes increased while the electrical conductivity and the DC arc resistance decreased. Furthermore, the relative density became enhanced with the increase of the amount of nickel while the hardness and electrical conductivity diminished and the DC arc resistance worsened.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.133-136
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• 2009

A newly designed Ag/$Ag^+$ reference electrode in a quartz tube with a tungsten tip junction (W-tip-Quartz- REF) was fabricated and its electrochemical performance was compared with a conventional Pyrex tube-based Ag/$Ag^+$ reference electrode (Py-REF). The results of the electrochemical potential measurements with the W-tip-Quartz- REF and the Py-REF in the LiCl-KCl eutectic melts for a wide temperature range proved that the oxide layer on the surface of the tungsten metal tip provided a high ionic conduction. Stability of our newly designed W-tip- Quartz-REF was tested by measuring a junction potential for 12 hours at 700${^{\circ}C}$. The results of the cyclic voltammetric measurement indicated that the Ag/$Ag^+$ reference electrode in the quartz tube with a tungsten tip junction can provide a good performance for a wide temperature range.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.508-512
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• 2004

An ultra-sharp tungsten electrode for field emission was manufactured by using an electrochemical etching method, and its beam characteristics were investigated. KOH and NaOH were the electrolytes used in this research, and the taper length of the tip varied form 150 $\mu\textrm{m}$ to 250 $\mu\textrm{m}$ according to the applied voltage and the concentration of the electrolyte. The electron-beam stability was measured to be within 5% for a total emission current of 5 ${\mu}\textrm{A}$ during 4 hours of operation, and the Ignition voltages were found to be ∼300 V. The tip radius was experimentally found to be 250${\AA}$ from a linear fitting of Fowler-Nordheim plots, which was in remarkably good agreement with that of the image size from scanning ion-microscopy.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.883-886
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• 1999

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.761-762
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• 2006

W-Cu alloy was very useful material for a heat sink, high electric contact and EDM electrode. Powder injection molding (PIM) is the optimum manufacturing technology to provide W-Cu components with low-cost and high-volume. We used various compositions of tungsten coated copper powders (W-Cu with 10 to 80 wt-% of copper) to manufacture W-Cu components by PIM. The optimum mixing, injection molding, debinding and sintering conditions to provide the high performance W-Cu components were investigated. The thermal and mechanical properties of W-Cu parts by PIM were measured. Finally, we can verify the high performance of W-Cu components by PIM with the tungsten coated copper.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.