• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.328-331
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• 2012

With the recent development of super-precision optical instruments, camera modules for devices, such as portable terminals and digital camera lenses, are increasingly being used. Since an optical lens is usually produced by high-temperature compression molding methods using tungsten carbide (WC) alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coatings for the core surface. In this study, Rhenium-Iridium (Re-Ir) thin films were deposited onto a WC molding core using a sputtering system. The Re-Ir thin films were prepared by a multi-target sputtering technique, using iridium, rhenium, and chromium as the sources. Argon and nitrogen were introduced through an inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having a composition ratio of 30 : 70, and the Re-Ir thin films were formed with a 240 nm thickness. Re-Ir thin films on WC molding core were analyzed by scanning electron microscope (SEM), atomic force microscope (AFM), and Ra (the arithmetical average surface roughness). Also, adhesion strength and coefficient friction of Re-Ir thin films were examined. The Re-Ir coating technique has received intensive attention in the coating processes field because of promising features, such as hardness, high elasticity, abrasion resistance and mechanical stability that result from the process. Re-Ir coating technique has also been applied widely in industrial and biomedical applications. In this study, WC molding core was manufactured, using high-performance precision machining and the effects of the Re-Ir coating on the surface roughness.

• 전자공학회논문지A
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• 제30A권7호
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• pp.60-74
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• 1993

Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.739-743
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• 2003

[ $Ba_2NaNb_5O_{15}$ ], hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Nb and Na have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 500nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where unwanted phases were always formed at the stoichiometric BNN composition. However, the unwanted phases decreased with the increase of excess Nb content, and the single phase (tetragonal tungsten bronze structure) BNN thin film was obtained when the niobium content reached some point. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.98-102
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• 2003

$Ba_2NaNb_5O_{15}$, hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Na and Nb have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 450nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where low temperature phase was always formed at the stoichiometric BNN composition. However, the amount of low temperature phase decreased with the increase of excess Nb content, and the single phase (orthorhombic tungsten bronze structure) BNN thin film was obtained at the temperature as low as $750^{\circ}C$ for samples with excess niobium. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• 대한화학회지
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• 제17권5호
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• pp.353-356
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• 1973

광물안의 기체불순물에 관한 연구는 특이한 파괴분석법(질량분석계를 사용)에 의하여 발전되어 왔다. 시료의 분쇠는 영구용 질량분석계의 고진공내에서 텅크스텐 카아바이드(tungsten carbide)로된 분쇠기로 행하여 졌다. 사용한 질량분석계의 측정감도는 표준상태에서 약 $10^{-10}cc$였다. 이 보문은 미국 죠지아주 라보니아 부근에서 채집된 석류석에 대한 위의 분석법에 의한 기체조성의 확인 및 결정을 보고하는 것이며 그 조성들은 $N_2$, $H_2$, $O_2$, $H_{2}O$, $CO_2$, CO, $CH_4$등이 있다.

• 자원환경지질
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• 제21권3호
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• pp.209-221
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• 1988

The ore deposit of the Ohtani mine is one of repesentatives of plutonic tungsten-tin veins related genetically to acidic magmatism of Late Cretaceous in the Inner zone of Southwest Japan. Based on macrostructures of vein filling on the order of ore body, three major mineralization stages, called stage I, stage II, and stage ill from earliest to latest, are distinguished by major tectonic breaks. The alteration zories are characterized by specific mineral associations in pseudomorphs after biotite. The alteration zones can be divided into two parts, i. e. a chlorite zone and a muscovite zone, each repesenting mineralogical and chemical changes produced by the hydrothermal alteration. The chloritic alteration took place at the beginning of mineralization, and muscovite alteration in additions to chloritic alteration took place at stage II and ill. The alteration zones are considered to be formed by either of two alteration mechanism. 1) The zones are formed by reaction of the rock with successive flows of solution of different composition and different stage. 2) The zones are formed contemporaneously as the solution move outward. Reaction between the solution and the wall-rock results in a continuous change in solution chemistry. The migration of the successive replacement of the fresh zone$\rightarrow$the chlorite zone$\rightarrow$the muscovite zone may have transgressed slowly veinward, leaving metasomatic borders between the different zones.

• 공업화학
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• 제24권1호
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• pp.44-48
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• 2013

본 연구에서는 낮은 열전이 온도를 가지는 텅스텐이 도핑된 이산화바나듐$(W-VO_2)$을 제조하였다. 텅스텐이 도핑된 이산화바나듐은 바나딜설페이트$(VOSO_4)$와 중탄산암모늄($(NH_4)$ $HCO_3$)을 전구체로 열분해 과정을 통해 제조하였다. 이에 대한 입자의 구조 및 열전이 특성을 FE-SEM, EDS, XRD, XPS, DSC 분석을 통해 조사하였다. 그 결과 텅스텐이 도핑된 이산화바나듐 입자의 형상은 판상형태로 텅스텐이 이산화바나듐 결정에 잘 도핑 되어 있음을 확인 하였다. 텅스텐이 도핑된 이산화바나듐의 결정 구조는 단사정으로 60 nm의 크기를 가지고 있었으며, 화학적인 조성 및 표면 상태는 이산화바나듐과 유사하였다. 또한, 텅스텐이 도핑된 이산화바나듐의 상전이 온도는 $38.5^{\circ}C$로 순수한 이산화바나듐의 상전이 온도인 $67.7^{\circ}C$에 비해 $29.2^{\circ}C$ 낮게 나타났으며, 가역 상전이 안정성이 우수하였다.

• 한국재료학회지
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• 제15권10호
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.202-204
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• 2009

Erosion is a common failure mode of materials frequently encountered in plant and power industry. Although the erosion resistance of Fe-base alloy has been inferior to the other expensive materials, it is expected that the strain-induced martensitic transformation can impart high erosion resistance to Fe-base alloy. The key technology to develop Fe-base metal cored welding wire for erosion resistant overlay welding may include the strain-induced metallurgy for hardening rate control and the welding flux metallurgy for dilution control. Sophisticated studies showed that the strain-induced martensitic transformation behavior was related to the critical strain energy which was dependent on the alloy composition. Dilution and bead shape of overlay weld were proved to be affected by metal transfer mode during gas tungsten arc welding and elements in welding fluxes. It was considered that the highly erosion resistant Fe-base overlay weld could be achieved by precise control of alloy composition to have proper level of critical strain energy for energy absorption and welding flux formulation to have small amount of deoxidizing metallic elements for dilution.