• Title/Summary/Keyword: Tungsten

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A Study on the Dynamic Material's Characteristics of Tungsten Alloy using Split Hopkinson Pressure Bar (홉킨슨 압축봉 장치를 이용한 텅스텐 합금의 동적 재료 특성에 관한 연구)

  • Hwang, Doo-Soon;Rho, Beong-Lae;Hong, Sung-In
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.8 s.173
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    • pp.92-99
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    • 2005
  • Tungsten heavy metal is characterized by a high density and novel combination of strength and ductility. Among them, 90W-7Ni-3Fe is used for applications, where the high specific weight of the material plays an important role. They are used as counterweights, rotating inertia members, as well as fur defense purposes(kinetic energy Penetrators, etc.). Because of these applications, it is essential to detemine the dynamic characteristics of tungsten alloy. In this paper, Explicit FEM(finite element method) is employed to investigate the dynamic characteristics of tungsten heavy metal under base of stress wave propagation theory for SHPB, and the model of specimen is divided into two parts to understand the phenomenon that stress wave penetrates through each tungsten base and matrix. This simulation results were compared to experimental one and through this program, the dynamic stress-strain curve of tungsten heavy metal can be obtained using quasi static stress-strain curve of pure tungsten and matrix.

Stduy on formation of W-silicide in the diped-phosphorus poly-Si/SiO$_{2}$/Si-substrate (인이 주입된 poly-Si/SiO$_{2}$/Si 기판에서 텅스텐 실리사이드의 형성에 관한연구)

  • 정회환;주병권;오명환;정관수
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.126-134
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    • 1996
  • Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

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Evaluation on Mechanical Properties of Sintered Tungsten Materials by Solvents (소결된 텅스텐 재료의 용매에 의한 특성 평가)

  • Park, Kwang-Mo;Lee, Sang-Pill;Lee, Jin-Kyung
    • Journal of the Korean Society of Industry Convergence
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    • v.24 no.3
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    • pp.289-294
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    • 2021
  • Tungsten (W) is used as a facing material for nuclear fusion reactors, and it is used in conjunction with structural materials such as copper alloy (CuCrZr), graphite, or stainless steel. On the other hand, since tungsten is a material with a high melting point, a method that can be manufactured at a lower temperature is important. Therefore, in this study, tungsten, which is a facing material, was attempted to be manufactured using a pressure sintering method. Material properties of sintered tungsten materials were analyzed for each solvent using two types of solvents, acetone and polyethylene glycol. The sintered tungsten material using acetone as a solvent exhibited a hardness value of about 255 Hv, and when polyethylene glycol was used, a hardness value of about 200 Hv was shown. The flexural strength of the sintered tungsten material was 870 MPa and 307 MPa, respectively, when acetone and polyethylene glycol were used as solvents. The sintered tungsten material using acetone as a solvent caused densification between particles, which served as a factor of increasing the strength.

Implementation of an Intelligent Video Detection System using Deep Learning in the Manufacturing Process of Tungsten Hexafluoride (딥러닝을 이용한 육불화텅스텐(WF6) 제조 공정의 지능형 영상 감지 시스템 구현)

  • Son, Seung-Yong;Kim, Young Mok;Choi, Doo-Hyun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.719-726
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    • 2021
  • Through the process of chemical vapor deposition, Tungsten Hexafluoride (WF6) is widely used by the semiconductor industry to form tungsten films. Tungsten Hexafluoride (WF6) is produced through manufacturing processes such as pulverization, wet smelting, calcination and reduction of tungsten ores. The manufacturing process of Tungsten Hexafluoride (WF6) is required thorough quality control to improve productivity. In this paper, a real-time detection system for oxidation defects that occur in the manufacturing process of Tungsten Hexafluoride (WF6) is proposed. The proposed system is implemented by applying YOLOv5 based on Convolutional Neural Network (CNN); it is expected to enable more stable management than existing management, which relies on skilled workers. The implementation method of the proposed system and the results of performance comparison are presented to prove the feasibility of the method for improving the efficiency of the WF6 manufacturing process in this paper. The proposed system applying YOLOv5s, which is the most suitable material in the actual production environment, demonstrates high accuracy (mAP@0.5 99.4 %) and real-time detection speed (FPS 46).

Deposition process of Multi-layered Al-%Cu/Tungsten Nitride Thin Film (Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막)

  • Lee, Gi-Seon;Kim, Jang-Hyeon;Seo, Su-Jeong;Kim, Nam-Cheol
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.624-628
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    • 2000
  • As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= $N_2$/($N_2$+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as $3.6{\mu}{\Omega}-cm$, which was due to grain growth reduced crystal defects.

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Synthesis of nanometric tungsten powders by solid state combustion method (고상연소반응법에 의한 나노텅스텐분말의 합성)

  • H.H. Nersisyan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.93-93
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    • 2003
  • Tungsten and tungsten heavy alloys have widespread application as radiation shielding devices and heavy duty electrical contacts. High density and good room temperature mechanical properties have generated interest in evaluating tungsten and tungsten alloys as kinetic energy penetrators against armor. Nowdays ultra fine-grained tungsten powders are in great interest because higly dense structures can be obtained at low temperature, pressure and lower sintering time. Several physical md chemical methods are available for the synthesis of nanometric metal Powders: ball milling, laser abalation, vapor condensation, chemical precipitation, metallic wire explosion i.e. However production rates of the above mentioned methods are low and further efforts are needed to find out large-scale synthesis methods. From this point of view solid state combustion method ( known as SHS) represents undoubted interest.

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Development of Tungsten Dispersed Copper Based Alloy and its Physical Property

  • Mishima, Akira;Sakaguchi, Shigeya
    • Journal of Powder Materials
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    • v.5 no.4
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    • pp.329-333
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    • 1998
  • Copper-10 wt. % tungsten alloyed powder was obtained by co-reduction of mixed tungsten-trioxide and copper oxide powders at 973 K for 7.2 Ks. In the alloy obtained by pressure-assisted sintering of this co-reduced powder, ultra fine tungsten particles (about 100nm) were dispersed uniformly in the copper matrix. At room temperature, the hardness of this alloy was Hv151 and the electrical conductivity was 85% IACS. After annealing at 1173 K for 3.6 Ks, the hardness and electrical conductivity were Hv147 and 84% IACS, respectively, and were same as before annealing. It was confirmed that the hardness and electrical conductivity of this alloy were hardly influenced by annealing condition since the microstructure of this alloy is highly stabilized.

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Synthesis of Nano-sized Tungsten Carbide Powders by Vapor Phase Reaction of Tungsten Ethoxide (텅스텐 에톡사이드의 기상 반응을 이용한 초미립 WC 분말의 합성)

  • 가미다;하국현;김병기
    • Journal of Powder Materials
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    • v.10 no.1
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    • pp.1-5
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    • 2003
  • Nano-sized WC powders were synthesized by vapor phase reaction using the precusor of tungsten ethoxide under helium and hydrogen atmosphere. The phases of the powder were varied with reaction Bone and gas flow rate. The powder size was about 30nm in diameter, and the tungsten carbide powder was coated by carbon layer. The synthesis of nano-sized WC powders was promoted as the hydrogen gas flow rate became higher. Inversely, tungsten oxide was formed by increasing the flow rate of helium gas. The synthesized powders were analyzed by XRD, FE-SEM, carbon analyzer etc.

Coating of Cobalt Over Tungsten Carbide Powder by Wet Chemical Reduction Method

  • Hong, Hyun-Seon;Yoon, Jin-Ho
    • Journal of Powder Materials
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    • v.21 no.2
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    • pp.93-96
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    • 2014
  • Cobalt coated tungsten carbide-cobalt composite powder has been prepared through wet chemical reduction method. The cobalt sulfate solution was converted to the cobalt chloride then the cobalt hydroxide. The tungsten carbide powders were added in to the cobalt hydroxide, the cobalt hydroxide was reduced and coated over tungsten carbide powder using hypo-phosphorous acid. Both the cobalt and the tungsten carbide phase peaks were evident in the tungsten carbide-cobalt composite powder by X-ray diffraction. The average particle size measured via scanning electron microscope, particle size analysis was around 380 nm and the thickness of coated cobalt was determined to be 30~40 nm by transmission electron microscopy.

Breakdown characteristics of gate oxide with tungsten polycide electrode (텅스텐 폴리사이드 전극에 따른 게이트 산화막의 내압 특성)

  • 정회환;이종현;정관수
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.77-82
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    • 1996
  • The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

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