• Nuclear Engineering and Technology
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• 제51권3호
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• pp.784-791
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• 2019

In the present study, a series of tungsten austenitic stainless steel alloys have been developed by interchanging the molybdenum in standard SS316 by tungsten. This was done to minimize the long-life residual activation occurred in molybdenum and nickel after decommissioning of the power plant. The microstructure and mechanical properties of the prepared alloys are determined. For the sake of increasing multifunction property of such series of tungsten-based austenitic stainless steel alloys, gamma shielding properties were studied experimentally by means of NaI(Tl) detector and theoretically calculated by using the XCOM program. Moreover, fast neutrons macroscopic removal cross-section been calculated. The obtained combined mechanical, structural and shielding properties indicated that the modified austenitic stainless steel sample containing 1.79% tungsten and 0.64% molybdenum has preferable properties among all other investigated samples in comparison with the standard SS316. These properties nominate this new composition in several nuclear application domains such as, nuclear shielding domain.

• Nuclear Engineering and Technology
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• 제53권5호
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• pp.1642-1651
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• 2021

In this study, isophtalic neopentyl glycol polyester (NPG-PES) based composites with different loading ratios of pure tungsten metal (W), tungsten (VI) oxide (WO₃), tungsten boron (WB) and tungsten carbide (WC) composites were prepared as alternative shielding materials for ionizing electromagnetic radiation (IEMR) shielding. Structural characterizations of the composites were done. Gamma spectrometric analysis of composites for 80-2000 keV energy range was performed and their usability as IEMR shielding was discussed. As a result, the produced composites showed a shielding performance of 60-100% of the lead (the most widely used IEMR shielding material) depending on the reinforcement material, reinforcement loading rate and experimental conditions. Thus, it was reported that produced composites could be an alternative to lead shieldings that have several disadvantages as toxic properties, difficulty of processing and inelasticity.

• 방송공학회논문지
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• 제21권4호
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• pp.538-551
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• 2016

방송 제작현장에서는 영상 이미지 표현의 광원으로 Tungsten Halogen 광원이 주 광원으로 사용 되어 왔다. Tungsten Halogen 광원은 그동안 개발된 다른 광원보다 태양광원과 유사한 색 재현성으로 각광받아 왔지만 에너지 효율성의 문제점을 가지고 있었다. 최근 대체 광원으로 고효율의 에너지와 긴 수명의 LED광원이 방송 광원으로 주목받기 시작했다. LED광원은 독특한 발광원리 때문에 카메라를 통한 영상 이미지의 색 재현성과 광원에서 투사되는 빛의 질에 있어서 Tungsten Halogen광원과 다른 특성을 가지고 있다. 이런 특성은 LED광원이 방송 광원으로서 도입이 늦어지는 이유이다. 이에 본 연구에서는 LED 광원의 색 재현성과 빛의 질 특성인 평탄도를 측정하여 기준광원인 Tungsten Halogen과 비교하여 방송 광원으로써의 적합성에 대한 실험 데이터를 제시할 것이다. 또한 LED광원이 방송 광원으로서의 확산되기 위해서 필요한 점이 무엇인지 향후 과제와 기준을 제시하고자 한다.

• 한국방사선학회논문지
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• 제12권2호
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• pp.173-178
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• 2018

병원에서 방사선을 차폐하는데 있어 납은 매우 유용하게 사용되고 있다. 하지만 납은 독성을 가지고 있고 대체물질에 대한 연구가 많이 이루어지고 있으며, 대표적으로 텅스텐을 대체물질로 한 연구가 많이 이루어지고 있다. 이에 본 연구에서 납과 텅스텐의 물리적 특성 및 반가층 실험을 진행한 결과 원자번호가 높은 납 원소의 반응단면적이 텅스텐에 비해 높게 나타났으나, 텅스텐의 밀도가 높아 동일한 크기일 경우 텅스텐의 전자밀도가 납에 비해 약 1.7배 높은 것으로 나타났다. MCNPX를 이용한 모의 모사에서도 에너지 따라 다소 차이가 있지만 텅스텐이 납에 비해 약 1.4배 차폐효과가 높은 것으로 나타났으며, 텅스텐이 납에 비해 우수한 차폐효율을 갖고 있는 것으로 확인 되었다. 하지만 경제적 측면을 고려할 때 텅스텐은 희소금속으로 납에 비해 가격이 약 25배 높아 납에 대한 대체물질로는 부적당한 것으로 사료되었다.

• 한국재료학회지
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• 제23권12호
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• pp.680-686
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• 2013

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

• 한국분말재료학회지
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• 제9권3호
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• pp.174-181
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• 2002

Nanosized tungsten carbide powders were synthesized by the chemical vapor condensation(CVC) process using the pyrolysis of tungsten hexacarbonyl($W(CO)_6$). The effect of CVC parameters on the formation and the microstructural change of as-prepared powders were studied by XRD, BET and TEM. The loosely agglomerated nanosized tungsten-carbide($WC_{1-x}$) particles having the smooth rounded tetragonal shape could be obtained below $1000^{\circ}C$ in argon and air atmosphere respectively. The grain size of powders was decreased from 53 nm to 28 nm with increasing reaction temperature. The increase of particle size with reaction temperature represented that the condensation of precursor vapor dominated the powder formation in CVC reactor. The powder prepared at $1000^{\circ}C$ was consisted of the pure W and cubic tungsten-carbide ($WC_{1-x}$), and their surfaces had irregular shape because the pure W was formed on the $WC_{1-x}$ powders. The $WC_{1-x}$ and W powders having the average particles size of about 5 nm were produced in vacuum.

• 대한화학회지
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• 제40권1호
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• pp.37-43
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• 1996

텅스텐을 작업 전극으로 사용하여 순환 전압-전류법으로 합성한 폴리아닐린 막의 전기화학적 임피던스를 0.1M 황산 용액에서 측정하였다. 전기 전도성을 갖는 퍼텐셜 영역에서는 고분자 막의 큰 축전-용량과작은 저항이 직렬로 연결된 전기화학 쎌이 관측되었다. 순수한 텅스텐에 입혀진 폴리아닐린은 접촉 저항을 무시할 수 있었으나, 산화 전극 막이 입혀진 텅스텐의 경우는 산화 전극 막의 저항과 접촉 저항이 관측되었다. 측정된 임피던스 데이터로부터 전극의 등가 회로를 추정하였으며, 이 등가 회로를 토대로 하여 폴리아닐린-막 안에 혼입된 이온의 물질 이동 파라미터를 산출하였다.

• 한국기계가공학회지
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• 제2권4호
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• pp.17-24
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• 2003

Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.

• 한국분말재료학회지
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• 제21권6호
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• pp.447-453
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• 2014

Effect of oxygen content in the ultrafine tungsten powder fabricated by electrical explosion of wire method on the behvior of spark plasma sintering was investigated. The initial oxygen content of 6.5 wt% of as-fabricated tungsten powder was reduced to 2.3 and 0.7 wt% for the powders which were reduction-treated at $400^{\circ}C$ for 2 hour and at $500^{\circ}C$ for 1h in hydrogen atmosphere, respectively. The reduction-treated tungsten powders were spark-plasma sintered at $1200-1600^{\circ}C$ for 100-3600 sec. with applied pressure of 50 MPa under vacuum of 0.133 Pa. Maximun sindered density of 97% relative density was obtained under the condition of $1600^{\circ}C$ for 1h from the tungsten powder with 0.7 wt% oxygen. Sintering activation energy of $95.85kJ/mol^{-1}$ was obtained, which is remarkably smaller than the reported ones of $380{\sim}460kJ/mol^{-1}$ for pressureless sintering of micron-scale tungsten powders.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.