• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.601-602
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• 2008

• Journal of environmental and Sanitary engineering
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• v.14 no.4
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• pp.143-149
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• 1999

In the tungsten industry as light source material, tungsten filament which used as light source material could form after molybdenumwire which used as the center supporter for coil shape tungsten wire was removed. This process uses hydrogen peroxide, Ozone and UV(Ultraviolet)Lamp, for the quantity of hydrogen peroxide decrease. The results were as follows : 1. An incandescent electric Lamp type : FL(FL-20) type : A standard of commodity (P.W.: $19{\pm}1.0mg$, $C.R:4.5{\pm}0.3{\Omega}$) 1) Only hydrogen peroxide treated ; Reaction Time : 65Min., P.W.: 18.60mg, $C.R.:4.60{\Omega}$ 2) Ozone/Ultraviolet/70% of hydrogen peroxide; Reaction Time : 64Min., P.W.: 18.61mg, C.R.: $4.61{\Omega}$ 2. A Fluorescent Lamp Type : GLS(GLS-40) Type : A standard of commodity(P.W.: $11.8{\pm}0.2mg$$65{\pm}1.5{\Omega}$) 1) Only hydrogen peroxide treated ; Reaction Time: 72Min, P.W.:11.88mg, C.R.: $65.62\Omega$ 2) Ozone/Ultraviolet/70% of hydrogen peroxide;Reaction Time:71Min., P.W.:11.88mg, C.R.: $65.63\Omega$

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1325-1326
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• 2006

Tungsten-molydiside $W_xMo_{1-x}Si_2$ was synthesized by self-propagating high temperature synthesis (SHS). The SHS product with the initial composition of (0.5Mo+0.5W+2Si) contains 23.9% $MoSi_2$, 40.89% $WSi_2$ with remaining 9.11% Mo, 9.16% Si and 16.94%W. Lattice parameters of the $MoSi_2$ and $WSi_2$ determined by Rietvelt analysis were a=0.3206 nm, c=0.7841 nm and a=0.3212 nm, c=0.7822 nm, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.321-327
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• 2000

Tungsten(W) thin films with good adhesion property and low resistivity (~10 $\mu$\Omega$$.cm) were deposited directly on $SiO_2$ by LPCVD. The adhesion property of W thin films on $SiO_2$ improves as the temperature and/or $SiH_4/WF_6$ gas ratio increase. Specifically tungsten thin films could be deposited on $SiO_2$ even at $350^{\circ}C$ if the gas ratio of 2 was employed. The resistivity of tungsten thin films deposited at $350^{\circ}C$ was high due to the presence of $\beta$-W. However, the resistivity can be minimized by increasing the amount of $H_2$ gas flow. Therefore, it is shown in this work that the adhesion of tungsten thin films on $SiO_2$ can be improved simply by controlling the process parameters (e.g., temperature, gas ratio and $H_2$ flow rate) without employing complex deposition methods or additional glue layers.

• Journal of Powder Materials
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• v.1 no.1
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• pp.79-84
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• 1994

The mechanism of activated sintering of tungsten powder was discussed in terms of diffusion and segregation of activator atoms at W grain boundaries. Shrinkage behaviours of W-0.2wt.% Ni, W-0.2wt.% Cu or pure W powder compacts during sintering at low temperatures of 900~ $1200^{\circ}C$ were investigated. It was found that the Cu additive inhibits sintering process causing lower densification than pure W compact while remarkable shrinkage occurred in the Ni added W powder. Such contrary effect was explained by comparing self diffusion processes along Ni or Cu segregated W boundaries in which Ni segregants enhance but Cu atoms retard the migration of W atoms at W boundaries.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.21-21
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• 1994

• Journal of Powder Materials
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• v.23 no.5
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• pp.372-378
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• 2016

This study focuses on the development of an alkaline leaching hydrometallurgy process for the recovery of tungsten from WC/Co hardmetal sludge, and an examination of the effect of the process parameters on tungsten recovery. The alkaline leaching hydrometallurgy process has four stages, i.e., oxidation of the sludge, leaching of tungsten by NaOH, refinement of the leaching solution, and precipitation of tungsten. The WC/Co hardmetal sludge oxide consists of $WO_3$ and $CoWO_4$. The leaching of tungsten is most affected by the leaching temperature, followed by the NaOH concentration and the leaching time. About 99% of tungsten in the WC/Co hardmetal sludge is leached at temperatures above $90^{\circ}C$ and a NaOH concentration above 15%. For refinement of the leaching solution, pH control of the solution using HCl is more effective than the addition of $Na_2S{\cdot}9H_2O$. The tungsten is precipitated as high-purity $H_2WO_4{\cdot}H_2O$ by pH control using HCl. With decreasing pH of the solution, the tungsten recovery rate increases and then decrease. About 93% of tungsten in the WC/Co hardmetal sludge is recovered by the alkaline leaching hydrometallurgy process.

• Journal of Powder Materials
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• v.9 no.2
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• pp.89-95
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• 2002

Spherical fine powders of tungsten oxide powders were prepared by the emulsion evaporation method. The characteristics of the powders prepared were examined by means of TGA, X-ray diffraction, SEM and image analysis. The emulsions were prepared by fast mixing of aqueous phase containing tugsten and the organic phase which composed of kerosene, surfactant, and paraffin oil. Precursors were made by evaporating the emulsionin the kerosene bath at $160^{\circ}C$, and then calcined at $650^{\circ}C$ in order to produce tungsten oxide powders. The average particle size of the tungsten oxide powders was $0.5\mutextrm{m}$ and their shapes were spherical at the both case of w/o and o/w type emulsions. As the HLB value of the surfactant increased and the concentration of tungsten ions decreased the mean particle siqe of tungsten oxide powders decreased whereas agglomerationsize increased. The optimum concentration of Span 80 was 8 percent by volume, and the optimum stirring speed in the emulsion formation was 5000 rpm in order to obtain fine and well dispersed $WO_3$ powders.

• Journal of Surface Science and Engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.