• Aerospace Engineering and Technology
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• v.7 no.2
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• pp.176-186
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• 2008

As determined single coaxial cable for the interface between satellite and ground station in COMS RF compatibility test, RF supporting unit was required to allow signals in different frequency-band to be exchanged in the single coaxial cable. In addition, the path loss between satellite and ground station in normal operation should be simulated through two RF supporting units connected to the ends of single coaxial cable. As an effort to design RF supporting unit, level diagram was firstly conducted on the basis of measured data for each element. From the level diagram, it was found that single coaxial cable connected with two RF supporting units properly represented the path loss between satellite and ground station After RF supporting unit was integrated on aluminum plate, it was tested that input signal level at each test cap linked with MODCS and TC&R was tunable within the required dynamic range. RF supporting unit, now completely integrated, will be applied in the upcoming COMS RF compatibility test.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.130-135
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• 2006

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a $F_1/NM/F_2/S$$(F_1:ferromagnetic,\;NM:nonmagnetic\;metallic,\;F_2:ferromagnetic,\;S:semiconductor\;layers)$ four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependence of reflectivity to the $F_1/NM/F_2/S$ four-layer system, where the reflectivities at the interface in $NM/F_2$ interface also depends on $F_2/S$ interface due to the multiple reflection of an electron-like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of $F_1/NM/F_2$, but also at the interface of $F_2/S$. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at $F_2/S$ interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due ti the electron-optics nature using a simple free-electron-like one-dimensional model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.545-550
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• 2013

We present a tactile information transceiver using a friction-tunable slider-pad. While previous tactile information devices were focused on either input or output functions, the present device offers lateral position/vertical direction detection and texture expression. In characterizing the tactile input performance, we measured the capacitance change due to the displacement of the slider-pad. The measured difference for a z-axis click was 0.146 nF/$40{\mu}m$ when the x-y axis navigation showed 0.09 nF/$750{\mu}m$ difference. In characterizing the texture expression, we measured the lateral force due to a normal load. We applied a voltage between parallel electrodes to induce electrostatic attraction in DC and AC voltages. We measured the friction under identical fingertip action conditions, and obtained friction in the range of 32-152 mN and lateral vibration in the force range of 128.1 mN at 60 V, 2 Hz. The proposed device can be applied to integrated tactile interface devices for mobile appliances.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Journal of the Korean Professional Engineers Association
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• v.34 no.4
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• pp.41-47
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• 2001

The paper describes SR3 (Synchronous Round Robin with Reservations), a collision-free medium access control protocol for all-optical slotted packet networks based on WDM multi-channel ring topologies where nodes are equipped with one fixed-wavelength receiver and one wavelength-tunable transmitter SR3 is derived from the SRR and MMR protocols previously proposed by the same authors for the same class of all-optical networks. SRR and MMR already achieve an efficient exploitation of the available bandwidth, while guaranteeing a throughput-fair access to each node. SR3, In addition, allows nodes to reserve slots. thereby achieving a stronger control on access delays; it is thus well suited to meet tight delay requirements, as it is the case for multimedia applications. Simulation results show that SR3 provides very good performance to guaranteed qualify traffic, but also brings signigicant performance improvements for best-effort traffic. Energy effciency is an important issue for optical network since they must rely on their batteries. We present a novel MAC protocol that achieves a good energy efficiency of optical interface of the network and provides support for diverse traffic types and QoS. The scheduler of the base station is responsible to provide the required QoS to connections on the optical link and to minimise the amount of energy spend by the High speed Network. The main principles of the MaC protocol are to avoid unsuccessful actions, minimise the number of transitions , and synchronise the mobile and the base-station. We will show that considerable amounts of energy can be saved using these principles.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.1
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• pp.40-44
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• 2014

A bridge resistance deviation-to-period (BRD-to-P) converter is presented for interfacing resistive biosensors. It consists of a linear operational transconductance amplifier (OTA) and a current-controlled oscillator (CCO) formed by a current-tunable Schmitt trigger and an integrator. The free running period of the converter is 1.824 ms when the bridge offset resistance is $1k{\Omega}$. The conversion sensitivity of the converter amounts to $3.814ms/{\Omega}$ over the resistance deviation range of $0-1.2{\Omega}$. The linearity error of the conversion characteristic is less than ${\pm}0.004%$.

• ETRI Journal
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• v.45 no.2
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• pp.193-202
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• 2023

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.