• 제목/요약/키워드: Tunable capacitor

검색결과 48건 처리시간 0.236초

미세유체 제어방법을 사용한 가변 커패시터 (Characterization of Microfluidically Variable Capacitors)

  • 구치완
    • 전기전자학회논문지
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    • 제23권3호
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    • pp.839-843
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    • 2019
  • 본 연구에서는 유체를 유전체 재료로 사용하는 가변 커패시터를 시연하고, 자기 공명 현미경(MRM)의 코일에 적용 가능성을 알아보려고 하였다. 전극으로 이루어진 커패시터 구조는 마이크로 유체 채널과 통합하여 제작되었고, 커패시턴스는 채널 내의 유체 충전율을 변화시키면서 측정되었다. DI water와 미네랄 오일을 사용하여 측정된 커패시턴스는 1.7 pF에서 12 pF, 그리고 1.7 pF에서 2 pF으로 변하였고, 유체의 유전율에 따라 커패시턴스의 변화를 확인하였다.

Tunable-Slot-Type Ground Radiation Antenna with Dual Band Operation Using LC Resonator

  • Zahid, Zeeshan;Kim, Hyeongdong
    • Journal of electromagnetic engineering and science
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    • 제17권2호
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    • pp.71-75
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    • 2017
  • A dual-band tunable-slot-type ground radiation antenna is proposed. The feeding structure consists of a coplanar waveguide and a lumped capacitor to excite currents for first- and second-order resonant modes of the ground. The resonant frequencies of both bands are controlled using a series combination of a capacitor and an inductor. The proposed design may be an attractive choice for mobile devices owing to its compact geometry and tunable operating frequencies. The measurement and simulation results of the proposed antenna show good agreement, indicating good impedance matching and radiation performance.

3중모드 기판집적 도파관(SIW) 구조를 이용한 주파수 가변 마이크로스트립 필터 설계 (Design of Frequency-Tunable Microstrip Filter Using Triple-Mode Substrate Integrated Waveguide (SIW) Structure)

  • 나경민;김동우;오순수
    • 전기전자학회논문지
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    • 제28권1호
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    • pp.72-77
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    • 2024
  • 본 논문에서는 최근 요구되는 이동통신 서비스의 다양한 주파수 대역 요구를 충족시키기 위해 3중 모드 주파수 가변 필터를 제안한다. 이 필터는 가변 커패시터를 활용하여 공진 주파수를 조절할 수 있는 튜닝 가능한 구조를 가지고 있다. 품질 계수를 향상하기 위해 SIW (Substrate Integrated Waveguide) 구조를 도입하였고, 중앙에 위치한 원형 홀을 통해 세 개의 공진 모드를 유발하는 구조를 구현하였다. 가변 커패시터에 의해 변화에 따른 전계분포와 공진 주파수의 변화를 EM 전파해석툴인 HFSS를 사용하여 시뮬레이션하였으며, 3중 모드의 전계분포와 공진 주파수의 변화를 확인하였다.

BZN/BST/BZN 박막에 기초한 가변 바렉터의 상부전극 가장자리 길이에 대한 가변성 영향 (The Effect of Top-electrode Perimeter on the Tunability of Tunable Varactors Based on a BZN/BST/BZN Thin Film)

  • 이영철;이백주;고경현
    • 한국항행학회논문지
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    • 제17권6호
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    • pp.720-725
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    • 2013
  • 본 논문은 핑거 (finger) 형 전극에 의해 증강된 가장자리 전계가 가변 캐패시터의 가변성을 개선시킬 수 있음을 보여주고 있다. 가장자리가 긴 전극을 설계하기 위해 면적과 선폭이 다른 finger 형태의 전극들이 설계되었다. 가변 바렉터들은 quartz 기판위에 para/ferro/para의 가변 다층 유전체 박막을 이용하여 제작되었다. 기존의 일반적인 가변 캐패시터와 비교해서, 핑거형 캐패시터들의 유효 용량와 가변성 특성을 분석하였다. 1~2.5 GHz에서 증강된 가장자리 전계로 인해 긴 가장자리 전극으로 설계된 가변 캐패시터의 유효 용량과 가변성이 각각 24~40 % 그리고 7~12 % 증가하였다.

가변 특성이 우수한 실리콘 기판을 사용한 BST 박막형 가변 커패시터 (BST Thin Film Variable Capacitor with High Tunability on Silicon Wafer)

  • 김기병;윤태순;이종철;김란영;김현석;김호기
    • 한국전자파학회논문지
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    • 제16권3호
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    • pp.253-259
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    • 2005
  • 본 논문에서는 고가의 단결정 기판 대신에 저가의 실리콘 기판을 이용한 인터디지탈 구조의BaSrTiO$_{3}$(BST) 박막 가변 커패시터를 제안하였다. 저가의 실리콘 기판 위의 BST 박막은 PLD 장비를 이용하여 증착하였으며, 제작된 가변 커패시터는 4 GHz까지 측정되었다. 또한 최대 인가 전압은 50 V이며, 5 kV/cm 조건에서 약 30$\%$ 정도의 가변율을 얻는다. 저가의 실리콘 기판 위에 BST 박막을 증착, 커패시터를 구현함으로써 BST 박막을 이용한 가변 소자들을 집적화할 수 있는 가능성을 보였다.

Compact Metamaterial-Based Tunable Zeroth-Order Resonant Antenna with Chip Variable Capacitor

  • Jung, Youn-Kwon;Lee, Bomson
    • Journal of electromagnetic engineering and science
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    • 제13권3호
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    • pp.189-191
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    • 2013
  • This letter presents a compact metamaterial-based tunable zeroth-order resonant antenna. It is based on the double-negative unit cell with a function of tunable inductance realized by a varactor and impedance convertor in the shunt branch. The resonant frequency of the designed antenna ranges from 2.31 to 3.08 GHz, depending on the capacitance of the used varactor. Its size is very compact ($0.05{\lambda}_0{\times}0.2{\lambda}_0$) with a relatively wide tunable range of 29.1%. The impedance bandwidth of the antenna is from 20 to 50 MHz for the resonant center frequency. The measured maximum total realized gain is from -0.68 dBi (2.43 GHz) to 1.69 dBi (2.97 GHz). The EM-simulated and measured results are in good agreement.

Design and Fabrication of a Phase Shifter RFIC using a Tunable Multi-layer Dielectric

  • 이영철
    • 한국산업정보학회논문지
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    • 제19권2호
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    • pp.45-49
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    • 2014
  • In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

Design of an Active Tunable Bandpass Filter for Spectrum Sensing Application in the TVWS Band

  • Kim, Dong-Su;Kim, Do-Hyun;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • 제17권1호
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    • pp.34-38
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    • 2017
  • In this paper, we propose an active tunable bandpass filter (BPF) for efficient spectrum sensing in the TV White Space (TVWS) band. By designing a narrow bandwidth, it is possible to improve the sensing probability. The basic circuit configuration involves switching the PIN diode compromising capacitor bank to change the capacitance of the LC resonant circuit. To cover the whole TVWS band effectively, we add a varactor diode, and the bandwidth is set to 25-MHz. We improve the insertion loss by using the active capacitance circuit. The tunable BPF in the TVWS band with a 20-MHz interval is designed to have 11 channels with a bandwidth of 25 MHz and a low insertion loss of 1.7-2.0 dB.

Low-temperature crystallized BST thin films by excimer laser annealing for embedded RF tunable capacitor

  • 강민규;도영호;오승민;강종윤;김상식;윤석진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.28-28
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    • 2010
  • This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

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Fabrication of Micro-inductor and Capacior For RF MEMS Applications

  • Cho, Bek-Hee;Lee, Jae-Ho;Bae, Young-Ho;Cho, Chan-Sub;Lee, Jong-Hyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권2호
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    • pp.102-110
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    • 2002
  • In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS(microelectro-mechanical systems) application with high performance and various function. In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS application with high performance and various functions.