• Journal of the Korean Vacuum Society
• /
• v.2 no.1
• /
• pp.34-40
• /
• 1993

새로운 단결정 박막 성장방법으로 최근에 많은 관심을 끌고 있는 초고진공 화학기상증착법(Ultra-High Vacuum Chemical Vapor Deposition)을 이용하여 AlGaAs에 에피탁시 박막을 성장시켰다. AlGaAs 에피탁시층의 성장은 2。 경사진 GaAs(100) 기판을 사용하였다. 반응 기체로는 Trimethylgallium(TMGa), Trimethylaluminum(TMAl)과 arsine을 사용하였고, 성장온도는 $580~700^{\circ}C$, 기체 압력은 10-5~10-4Torr를 유지하였다. 특히 본 연구에서는 arsine을 사전에 열분해 하는 통상의 Chemical Beam Epitaxy(CBE) 성장법과는 달리, arsine이 표면에서 분해되는 화학 반응만을 사용하여도 AlGaAs 에피탁시를 성장할 수 있음은 물론 박막내의 탄소 불순물의 농도가 크게 낮아짐을 관찰하였다. 또한 성장 온도의 변화에 따른 AlGaAs 에피탁시층의 Al 함유 과정에 대하여도 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1993.02a
• /
• pp.25-26
• /
• 1993

• Bulletin of the Korean Chemical Society
• /
• v.30 no.8
• /
• pp.1805-1810
• /
• 2009

The adsorptions of trimethygallium (TMG) and arsine (As$H_3$) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of As$H_3$ adsorption on the surface was also identified. Among these, the methane loss reaction depositing –Ga(C$H_3)_2$ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

• ETRI Journal
• /
• v.16 no.3
• /
• pp.1-10
• /
• 1994

Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

• Proceedings of the KSME Conference
• /
• 2001.11b
• /
• pp.770-775
• /
• 2001

Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD (metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactants to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. The newly developed reactor, that precursors were supplied at separated inlet to prevent from premixing, was investigated to obtain the quantitative verification. As a results, the optimum mass flow rate, wall tilt angle and inlet conditions were proposed.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.1
• /
• pp.28-33
• /
• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.2
• /
• pp.149-153
• /
• 1995

We have grown GaAs epilayers by chemical beam epitaxy(CBE) using unprecracked hydrides and metal organic compounds via a surface decomposition process. This result shows that unprecracked arsine (AsH3) or monoethylarsine (MEAs) can be used in chemical beam epitaxy(CBE) as a replacement of a precracked AsH3 source in CBE. It was also found that the uptake of carbon impurity in epilayers grown using trimethylgallium(TMG) with unprecracked AsH3 or MEAs was significantly reduced compared to that in epilayers grown by CBE process employing TMG and arsenics produced from precracked hydrides. We propose a surface structural model suggesting that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from hydride sources were also considered to hinder carbon atoms from being incorporated into the epilayers or to remove other carbon containing species on the surface.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.341-349
• /
• 2001

Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD(metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactant to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. From the numerical calculation, the concentration of reactants could be qualitatively predicted by the Nusselt number(heat transfer) and the optimum mass flow rate, wall tilt angle and inlet condition were considered.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.32 no.3
• /
• pp.181-189
• /
• 2008

GaAs film growth process from trimethylgallium(TMGa) and tertiary-butylarsine(TBAs) using a horizontal MOCVD reactor was numerically studied to explain the experimental result that the decreasing surface reaction rate as the increasing partial pressure of group III species. Using the non-linear model based on the Langmuir isotherm which considers the adsorption and desorption of molecules, film deposition over the entire reactor scale was predicted by computational fluid dynamics (CFD) with the aid of the parameters obtained from the selective area growth (SAG) technique. CFD Results using the non-linear surface reaction model with the parameters determined from the SAG experiments predicted too high film growth rate compared to the measured values at the downstream region where the temperature was decreased abruptly. The pairs of ($k_s^n$, K) from the numerical simulations was $(2.52{\times}10K^{-6}mol/m^2/s,\;1.6{\times}10^5m^3/mol)$, whereas the experimentally determined was $(3.58{\times}10^{-5}mol/m^2/s,\;6.9{\times}10^5m^3/mol)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.1
• /
• pp.12-17
• /
• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.