• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1266-1268
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• 2013

• 대한화학회지
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• 제37권12호
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• pp.995-1002
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• 1993

TMA와 $NH_3$와의 기상 열분해 반응을 in-situ FTIR 분광법으로 관찰하였다. 사용한 spectroscopic reaction cell은 stainless-steel제로 자체 제작한 hexagonal-port chamber로서 2개의 NaCl window를 평행하게 설치하여 1100$^{\circ}C$까지 가열할 수 있으며 또한 이와 같은 높은 온도에서 분광분석이 가능하였다. TMA와 $NH_3$는 혼합 즉시 반응하여 TMA:$NH_3$adduct를 생성하였으며, 500$^{\circ}C$에서그 adduct가 완전분해됨을 FTIR로 확인하였다. TMA와 TMA:$NH_3$adduct의 열분해는 주생성물로$CH_4$을 방출하였다. 기상의 TMA,$NH_3$ 및 TMA:$NH_3$ adduct에 대하여 상온에서 관찰한 IR band들은 문헌값과 대조하여 assign하였다. TMA의 열분해에 대한 kinetic data로부터 이 반응이 1차식으로 일어남을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제17권4호
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• pp.380-384
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• 1996

Lithium trimethylalkynylaluminates, prepared conveniently by reacting trimethylaluminum with lithium alkynide, readily react with aldehydes and ketones to give the corresponding propargyl alcohols in 70-95% yields. The reaction is highly chemoselective; thus many other functional groups such as amides, nitriles, epoxides and halogen compounds are inert under the reaction conditions. The reagents also show an excellent 1,2-regiospecificity in the reactions with cyclic or acyclic α,β-unsaturated carbonyl compounds.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권2호
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.1-6
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• 2003

Aluminum oxide ($Al_2O_3$) nanotubes and nanorods were fabricated by coating and filling of multiwalled carbon nanotubes (MWNTs) with atomic-layer deposition (ALD). $Al_2O_3$ material was deposited on the MWNTs at a substrate temperature of $300^{\circ}C$ using trimethylaluminum and distilled water. Transmission electron microscopy, high resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and selected area electron diffraction of the deposited MWNTs revealed that amorphous $Al_2O_3$ material coats the MWNTs conformally and that this material fills the inside of the MWNTs. These illustrate that ALD has an excellent capability to coat and fill any three-dimensional shapes of MWNTs conformally without producing any crystallites.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.15-18
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• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• 전기학회논문지
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• 제58권12호
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• 한국진공학회지
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• 제2권1호
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• pp.34-40
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• 1993

새로운 단결정 박막 성장방법으로 최근에 많은 관심을 끌고 있는 초고진공 화학기상증착법(Ultra-High Vacuum Chemical Vapor Deposition)을 이용하여 AlGaAs에 에피탁시 박막을 성장시켰다. AlGaAs 에피탁시층의 성장은 2。 경사진 GaAs(100) 기판을 사용하였다. 반응 기체로는 Trimethylgallium(TMGa), Trimethylaluminum(TMAl)과 arsine을 사용하였고, 성장온도는 $580~700^{\circ}C$, 기체 압력은 10-5~10-4Torr를 유지하였다. 특히 본 연구에서는 arsine을 사전에 열분해 하는 통상의 Chemical Beam Epitaxy(CBE) 성장법과는 달리, arsine이 표면에서 분해되는 화학 반응만을 사용하여도 AlGaAs 에피탁시를 성장할 수 있음은 물론 박막내의 탄소 불순물의 농도가 크게 낮아짐을 관찰하였다. 또한 성장 온도의 변화에 따른 AlGaAs 에피탁시층의 Al 함유 과정에 대하여도 고찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.256-256
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• 2011

We have deposited Al2O3 thin films on Si substrates at room temperature by UV-enhanced atomic layer deposition using trimethylaluminum (TMA) and H2O as precursors with UV light. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In many cases, the surface reactions of the atomic layer deposition are not completed at low temperature. In this experiment, the surface reactions were found to be self-limiting and complementary enough to yield uniform Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effective to obtain the high quality Al2O3 thin films with defectless.

• Archives of Pharmacal Research
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• 제17권3호
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• pp.204-206
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• 1994

A regioselective perparation of 10-methoxy-11-hydroxyaporphine ("Apocodeine, 1b") form (R, S)-10, 11-dihydroxyaporphine(apomorphine, 1a) is described. The isopropylidene ketal ring of 10, 11-(isopropylidenyldioxy) aporphine (2) obtained by the isopropylidenation of apomorphine, was regioselectively opened by the ten equivalent of timethylaluminum to give 100-hydroxy-11-t-butyloxyaporphine (3). The free 10-hydroxyl position of 3 was methylated with methyl p-toluenesulfonate/NaH, and afforded 10-methoxy-11-t-butyloxyaporphine (4) in high yield. Selective debutylation gave the desired 10-methoxy-11-hydroxyaporphine("apocodeine", 1b) in good yield.