• 제목/요약/키워드: Trilayers

검색결과 34건 처리시간 0.028초

Magnetization Reversal of Exchange-biased Bilayers and Trilayers Probed using Front and Back LT-MOKE

  • Kim, Ki-Yeon;Kim, Ji-Wan;Choi, Hyeok-Cheol;You, Chun-Yeol;Shin, Sung-Chul;Lee, Jeong-Soo
    • Journal of Magnetics
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    • 제14권1호
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    • pp.36-41
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    • 2009

  • Magneto-optical Kerr effect (MOKE) magnetometry was used to investigate magnetization reversal dynamics in 30-nm NiFe/15-nm FeMn, 15-nm FeMn/30-nm CoFe bilayers, and 30-nm NiFe/(2,10)-nm FeMn/30-nm CoFe trilayers. The in-plane magnetization components of each ferromagnetic layer, both parallel and perpendicular to the applied field, were separately determined by measuring the longitudinal and transverse MOKE hysteresis loops from both the front and back sides of the film for an oblique incident s-polarized beam. The magnetization of the FeMn/CoFe bilayer was reversed abruptly and symmetrically through nucleation and domain wall propagation, while that of the NiFe/FeMn bilayer was reversed asymmetrically with a dominant rotation. In the NiFe/FeMn/CoFe trilayers, the magnetic reversal of the two ferromagnetic layers proceeded via nucleation and domain wall propagation for 2-nm FeMn, but via asymmetric rotation for 10-nm FeMn. The exchange-biased ferromagnetic layers showed the magnetization reversal along the same path in the film plane for the decreasing and increasing field branches from transverse MOKE hysteresis loops, which can be qualitatively explained by the theoretical model of the exchange-biased ferromagnetic/antiferromagnetic systems.

  • https://doi.org/10.4283/JMAG.2009.14.1.036 인용 PDF KSCI

Hysteresis Loops, Critical Fields and Energy Products for Exchange-spring Hard/soft/hard Trilayers

  • Chen, B.Z.;Yan, S.;Ju, Y.Z.;Zhao, G.P.;Zhang, X.C.;Yue, M.;Xia, J.
    • Journal of Magnetics
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    • 제20권1호
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    • pp.31-39
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    • 2015

  • Macroscopic hysteresis loops and microscopic magnetic moment distributions have been determined by a three-dimensional (3D) model for exchange-coupled Sm-Co/${\alpha}-Fe$/Sm-Co trilayers with in-plane collinear easy axes. These results are carefully compared with the popular one-dimensional (1D) micromagnetic models and recent experimental data. It is found that the results obtained from the two methods match very well, especially for the remanence and coercivity, justifying the calculations. Both nucleation and coercive fields decrease monotonically as the soft layer thickness $L^s$ increases while the largest maximum energy product (roughly 50 MGOe) occurs when the thicknesses of hard and soft layers are 5 nm and 15 nm, respectively. Moreover, the calculated angular distributions in the thickness direction for the magnetic moments are similar. Nevertheless, the calculated nucleation and pinning fields as well as the energy products by 3D OOMMF are systematically smaller than those given by the 1D model, due mainly to the stray fields at the corners of the films. These demagnetization fields help the magnetic moments at the corners to deviate from the previous saturation state and facilitate the nucleation. Such an effect enhances as $L^s$ increases. When the thicknesses of hard and soft layers are 10 nm and 20 nm, respectively, the pinning field difference is as large as 30%, while the nucleation fields have opposite signs.

  • https://doi.org/10.4283/JMAG.2015.20.1.031 인용 PDF KSCI

NiFeCo/Cu/Co 삼층막의 자기저항 메모리 특성에 관한 연구 (A Study on the Magnetoresistive RAM (MRAM) Characteristics of NiFeCo/Cu/Co Trilayers)

  • 김형준;이병일;주승기
    • 한국자기학회지
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    • 제7권3호
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    • pp.152-158
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    • 1997

  • Ni$_{66}$Fe$_{16}$ $Co_{18}$ /Cu/Co 삼층막을 4 .deg. tilt-cut Si(111) 기판과 Cu(50 .angs. ) 바닥층 위에 형성하고, 사진식각 및 에칭 작업을 통해 자기저항 메모리 소자를 제작하여 자기저항 메모리 특성을 연구하였다. 외부 자장의 인가 없이 증착한 NiFeCo/Cu/Co 삼층막은 4 .deg. tilt-cut Si(111) 기판과 Cu(50 .angs. ) 바닥층의 영향으로 면내 일축자기이방성을 형성하였으며, 낮은 자장 내에서 높은 자기저항비와 자기저항민감도 등 자기저항 메모리 소자에 응용이 가능한 우수한 자기저항 특성을 나타내었다. NiFeCo/Cu/Co 삼층막의 Cu 사잇층 두께 변화에 따라 삼층막을 이루는 두 자성층 간에 강자성 및 반강자성 결합력이 관찰되었으며, 결합력은 사잇층 두께에 민감하게 변화하여 NiFeCo/Cu/Co 삼층막의 메모리 특성에 영향을 끼쳤다. 사잇층 두께의 변화에 대해 최적화된 [NiFeCo(60 .angs. )/Cu(25 .angs. )/Co(30 .angs. )]/Cu(50 .angs. )/Si(111, 4 .deg. tilt-cut) 스핀밸브 삼층막을 이용하여 거시적 자기저항 메모리 소자를 제작하고, 시험 소자의 메모리 동작에 대해 관찰하였다. Sense 전류는 10 mA로 고정하고, 약 5 * $10^{5}$ A/$cm^{2}$의 word 전류를 가해 약 10 mV의 출력 전압을 시험 소자에서 얻었으며, NiFeCo/Cu/Co 스핀밸브 삼층막의 자기저항 메모리 소자에의 응용 가능성을 확인할 수 있었다.다.

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