• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 한국정보통신학회논문지
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• 제17권4호
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• pp.781-788
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• 2013

본 논문에서는 노인의 낙상에 의한 위급상항을 모니터링 하기 위한 4족 로봇 및 모니터링 시스템을 소개한다. 4족 로봇은 FPGA Board(Field Programmable Gate Array)를 이용한 특정 색을 판별하는 영상처리에 기반하여 자율 이동한다. 노인의 낙상을 감지하기 위해 가슴에 센서노드를 착용하고, 낙상에 의한 응급 상황 시에 4족 로봇이 낙상신호를 관리자에게 전송한다. 관리자는 전송된 영상을 기반으로 4족 로봇을 제어 및 상황판단을 하고, 위급상황이면 119에 신고를 한다. 센서노드만을 사용한 낙상 감지 시스템에서 98.33% 낙상의 Sensitivity와 일상행동 94.375% Specificity가 측정 되었다. 100% 낙상 감지를 못했던 점을 낙상 감지 시스템과 이동형 카메라(로봇)의 결합 알고리즘을 제안 및 실험을 통해 100% 검증 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.