• Journal of Periodontal and Implant Science
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• 제29권1호
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• pp.65-80
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• 1999

The purpose of this study was to evaluate the effects of periodontal curet and various rotating instruments on the root surfaces. Thirty-five extracted teeth with advanced periodontal disease were used. They was root planed with periodontal curet, periodontal Perio-Clean bur, periodontal Roto-Perio bur, resin polishing ET bur, and resin polishing diamond fissure bur. To find dentinal tubule orifices on the root surface, tetracycline HCI solution was applied to the one tooth of treated each group. Then, root surfaces were investigated using scanning electron microscope. Amount of loss of cementum was evaluated by loss of tooth substance index. The results were as follows. 1. Groups treated with periodontal curet and Perio-Clean bur showed irregular surface and concavities. Concavities seemed to be lacunae of cementocyte. Other groups treated with Roto-Perio bur, resin polishing ET bur, and resin polishing diamond fissure bur showed partially opened dentinal tubule orifice. 2. Groups treated with periodontal curet and Perio-Clean bur and tetracycline HCl showed irregular surface. No dentinal tubule orifice was seen. Other groups treated with Roto-Perio bur, resin polishing ET bur, and resin polishing diamond fissure bur and tetracycline HCl showed dentinal tubule orifice with various shape and size. 3. Loss of tooth substance indices were compared between groups. There was no statistically difference between periodontal curet and Perio-Clean bur groups. There were statistically differences between periodontal curet and Roto-Perio bur, ET bur, and diamond fissure bur groups. As a result of this study, groups treated with Roto-Perio bur, resin polishing ET bur, and resin polishing diamond fissure bur showed more cementum removed than groups treated with periodontal curet and Perio-Clean bur. Therefore, in a conventional treatment for periodontal disease, it was recommended that periodontal curet or Perio-Clean bur should be used. In a treatment for regeneration of periodontal tissue, it was recommended that Roto-Perio bur, resin polishing ET bur, or resin polishing diamond fissure bur should be used

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.13-17
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• 1997

It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of $(100)_{dimond}//(100)_{si}\; and\; [110]_{diamond}//[110]_{si}$ was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.

• 대한치과보철학회지
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• 제29권2호
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• pp.117-127
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• 1991

The purpose of this study was to evaluate the effect of surface treatment of fractured metal-ceramic crown on bond strength of porcelain repair resin. The specimens were divided into two groups for metal specimens add five groups for porcelain specimens by surface treatment methods. the metal specimens were treated by 2 methods. : micro-sandblasting with $50{\mu}m$ aluminum oxide and grinding with diamond bur. The porcelain specimens were treated by 5 methods : micro-sandblasting with $50{\mu}m$ aluminum oxide, grinding with diamond bur, etching with porcelain etching agent, combination of micro-sandblasting and etching procedure, and combination of grinding and etching procedure. After surface treatment, each specimen was bonded with composite resin and the bond strength was measured and the surface texture was observed by scanning electromicroscope(SEM). The results were as follows : 1. There was significant difference in shear bond strength between metal specimen and prorcelain specimen. 2. Bood strength of metal specimens treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting. 3. Bond strength of porcelain specimen treated with diamond bur was higher than that treated with $50{\mu}m$ aluminum oxide sandblasting and porcelain etching agent. 4. There was no significant difference in shear bond strength between the group treated with diamond bur and combined treatment groups respectively. 5. The large undercuts were observed in group treated with diamond bur by SEM.

• 한국광물학회지
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• 제21권4호
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• pp.435-442
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• 2008

천연, 합성, 그리고 처리된 보석용 다이아몬에 대한 NMR과 EPR 실험을 수행하였다. 동일한 실험조건에서 비교적 짧은 100 분의 실험시간 동안에 얻어진 $^{13}C$ NMR 스펙트럼을 통해 천연과 합성다이아몬드, 처리된 다이아몬드와 처리되지 않은 다이아몬드, 그리고 고온고압 처리된 다이아몬드와 전자빔 처리된 다이아몬드가 각각 서로 구별될 수 있는 가능성을 확인하였다. 보석용 합성 다이아몬드는 촉매제로 흔히 사용되는 전이금속의 상자기성 영향으로 $^{13}C$ NMR의 선폭이 1.6 ppm 이상으로 얻어졌고, 보석용 천연 다이아몬드는 처리방법에 무관하게 그 선폭이 0.5 ppm 이하로 얻어졌다. 고온고압 처리된 보석용 천연 다이아몬드의 선폭(0.5 ppm)은 전자빔 처리된 다이아몬드의 선폭(0.2 ppm) 보다 두 배 이상 넓은 것으로 나타났다. 처리된 보석용 천연 다이아몬드의 $^{13}C$ NMR 신호 세기는 처리되지 않은 보석용 천연 다이아몬드의 신호 세기에 비해 10배 이상 높게 얻어졌다. EPR 스펙트럼을 이용해 얻은 각 다이아몬드의 상자기성 결함(전자)의 농도와의 상관성을 검토해 본 결과, $^{13}C$ NMR 신호의 상대적 세기는 각 시료들에 함유되어 있는 상자기성 전파의 농도에 비례하여 증가하지만 전자빔 처리된 다이아몬드의 경우는 예외임이 밝혀졌다. 이를 통해 전자빔 처리된 다이아몬드의 경우 NMR 신호의 세기를 정하는 인자로 상자기성 불순물 성분 이외에 격자 성분도 고려해야 됨을 알 수 있었다.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.221-225
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• 1996

In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

• 한국세라믹학회지
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• 제49권6호
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• pp.493-497
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• 2012

We propose a new reliable, fast, and low cost identification method for similarly looking 0.3ct vivid yellow color of natural, HPHT treated, and synthesized diamonds. Conventional optical microscopy as well as low temperature PL(photoluminescence), FT-IR, UV-VIS-NIR, micro-Raman spectroscopy, and vibrating sample magnetometry(VSM) characterization were executed. We could not distinguish the natural diamonds from the treated or the synthesized stones with an optical microscopy, PL, FT-IR, and UV-VIS-NIR spectroscopy. However, we could identify the treated diamond with micro-Raman spectroscopy due to unique $1440cm^{-1}$ peak appearance. VSM revealed easily the synthesized diamond because of its ferromagnetic behavior. Our preliminary propose on employing the Micro-Raman spectroscopy and VSM might be suitable for identification of the similar looking vivid yellow colored diamonds.

• 한국세라믹학회지
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• 제27권4호
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• 한국표면공학회지
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• 제39권5호
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• pp.229-234
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• 2006

Diamonds have been widely employed as polishing media for precise machining and noble substrates for microelectronics. The recent development of the split sphere press has led to the enhancement of low quality natural diamonds. Synthesized and treated diamonds are sometimes traded deceptively as high quality natural diamonds because it is hard to distinguish among these diamonds with conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. We proposed using new methods of UV fluorescence and X-ray Lang topography for checking the local HPHT stress field to distinguish these diamonds from natural ones. We observe unique differences in the local stress field images in treated diamonds using UV fluorescence and Lang topography characterization. Our result implies that our proposed methods may be appropriate for identification of the treated diamonds.

• 대한치과보철학회지
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• 제32권1호
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• pp.23-36
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• 1994

Most investigators recommended that porcelain surface should be roughened with abrasives and/or be etched with acid in repairing the fractured porcelain with composite resin. This study was designed to evaluate the effect of porcelain surface treatments on the bond strength between porcelain and composite resin by measuring the shear bond strength and observing the porcelain surface with SEM. 48 porcelain disc were fabricated with Vintage porcelain and embedded in epoxy resin with the test surface exposed. The specimens were divided four groups at random and the test surfaces of the four groups were prepared as follows : Group 1 : Porcelain surface was roughened with a fine diamond and treated with 32% phosphoric acid gel for 10 seconds. Group 2 : Porcelain surface was roughened with a fine diamond and etched with 8% hydrofluoric acid gel for 5 minutes. Group 3 : Porcelain surface was roughened with a coarse diamond and treated with 32% phosphoric acid gel for 10 seconds. Group 4 : Porcelain surface was roughened with a coarse diamond and etched with 8% hydrofluoric acid gel for 5 minutes. All specimens were washed for 30 seconds. A representative specimen of each group was selected and the porcelain surface was observed with SEM at 1000 magnification. Remaining specimens were silanated, bonded with composite resin, thermocycled, and shear-tested on specially designed zig connected to Instron machine. The results were as follows : 1. The shear bond strength of the group etched with hydrofluoric acid was significantly higher than that of group treated with phosphoric acid(p<0.01). 2. The shear bond strength of the group roughened with a fine diamond was not significantly different from that of the group roughened with a coarse diamond(p>0.01). 3. SEM examination of prepared porcelain surfaces revealed that the surface etched with hydrofluoric acid showed numerous microporosities, undercut, and rougher surface than the surface treated with phosphoric acid. 4. All specimens etched with hydrofluoric acid showed cohesive failure within porcelain, but specimens treated with phosphoric acid mainly showed adhesive failure between porcelain and composite resin.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.21-23
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• 1997

Dependences of total photoyields on incident photon energies were measured using synchrotron radiation light for different chemical-vapor-deposited diamond with differently treated surface. Results show that a considerable amount of gap states are presented for as-grown specimens with H-terminated, that negative electron affinity (NEA) is realized for H-plasma-treated specimens, and that sufficient O-treatment to NEA specimens results in positive electron affinity. The observed electron affinity can be explained in terms of differences in strength of the surface dipole layer formed by difference in the electron negativity among C, H and O atoms.