• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.114-117
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• 2005

We have fabricated twisted nematic (TN) cell doped by carbon nanotubes (CNTs). The CNTs with a minute amount of doping do not perturb the liquid crystal orientation in the off- and on-state. The hysteresis studies of voltage-dependent transmittance and capacitance under ac and dc electric field show that the amount of residual dc, which is related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.581-585
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• 2010

High strength sheet steels for automobile are seriously compromised by hydrogen embrittlement. This issue has been continuously studied, but the field of interest, which lies between microstructural characteristics and hydrogen behavior with hydrogen charging, has not yet been thoroughly investigated. This study was done to investigate the behavior of hydrogen according to the hydrogen volume fraction on 590MPa grade DP steels, which are developed under hydrogen charging conditions as high strength sheet steels for automobiles. The penetration depths and the mechanical properties, according to charging conditions, were investigated through the distribution of micro-hardness and the microstructural observation of the subsurface zone. It was found that the amount of hydrogen trapping in 590MPa DP steels was related to the austenite volume fraction. It was confirmed that the distribution of micro-hardnesses according to the depth of the subsurface zone under the free surface showed the relationship of the depth of the hydrogen saturation between the charging conditions.

• Journal of radiological science and technology
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• v.15 no.2
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• pp.31-36
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• 1992

Grids can improve the diagnostic quality of chest radiography by trapping the greater part of scattered radiation thus providing more detailed. chest radiographic images. It is most effective mathod of reduce the scatter ratio but must increase the expour factor. The benefit of use of grid is improve the contrast and the loss is increase of patient dose. In chest radiography especially hard quality high voltage radiography it will have to be considered to select the optimum grid with view point of benefit and loss. In this experiment, author got some result of characteristics about 4 different grids with film method. 1. There was no difference the scatter ratio in case of no grid and the scatter ratio was about 60%. 2. 16 : 1 grid was excellent of scatter reduction factor in high voltage chest radiography, next was 10 : 1, CROSS, MICRO FINE grid have low scatter reduction rate compare to 16:1, 10:1 grid. 3. The bucky factor of CROSS grid in accordance of kVp was find out the highest in 4 grids, on the contraly 10 : 1 grid was profitable to the exposure does. 4. With careful consideration in the point of scatter reducion rate and bucky factor, author suggest the 10 : 1 linear grid on the use of chest radiography in $80{\sim}120\;kVp$, 16 : 1 grid in $120{\sim}140\;kVp$.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.9-12
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• 1998

Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.

• Journal of Environmental Impact Assessment
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• v.22 no.6
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• pp.569-579
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• 2013

To identify the characteristics of the dropping habits and to provide improved methods for sign survey of Siberian flying squirrels Pteromys volans, an investigation was carried out in Jirisan National Park from April 2012 to May 2013. The latrines of study area were checked once a month and the characteristics of dropping behavior were camera trapped. The feces of Siberian flying squirrel were found on the point which tree forked, mostly from November to May. The squirrel actively presents in forked tree mainly on the September to April. The Siberian flying squirrel is found to be a typical nocturnal animal as it actively move between 6p.m. to 7a.m.. The study found that squirrel does feeding and dropping in the winter time on forked tree. On the point which tree forked could be a good place for the squirrel to hide from their predator when there is no leaf on the tree. Conducting the sign survey is advisable from November to May, as well as with the careful approach to the animals. As Siberian flying squirrel is an endangered species, adjusting the survey period is mandatory, especially when doing environmental impact assessment and a research on its dwelling areas.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.