• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.549-552
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• 1998

Recently, the gate oxide damage induced by the plasma processes has been one of the most significant reliability issues as the gate oxide thickness falls below 10 nm. The process-induced damage was studied with the metal antenna test structures. In addition to the electron trapping, the hole trapping in a 10 nm thick gate oxide due to the plasma-induced charging was observed in the NMOS's with a metal antenna. The hole trapping gave rise to the decrease of the transconductance (gm) similarly to the case of the electron trapping, but to the extent much less than the electron trapping. It would be because the electrical stress that the plasma-induced charging forced to the gate oxide for the devices with the hole trapping was much smaller than for those with the electron trapping. This hypothesis was strongly supported by the measured characteristics of the Fowler-Nordheim current in the gate oxide.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2003.11a
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• pp.329-334
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• 2003

Design of pre-compression region(trapping region) of the valve plate is an important element to minimize the pressure fluctuation in a cylinder and in discharge process, and pump noise. In this study, we tried to prove what the characteristics of the oil hydraulic pump would be according to the angle of the trapping region. Three kinds of asymmetrical valve plates were used. As a result, we found that by designing the trapping region, the slope of the pressure rise in the cylinder port from low-pressure suction region to high-pressure discharge region is relaxed and the pressure fluctuation width and the discharge pressure pulsation are reduced. Therefore, because the pump gets smooth pressure fluctuation and low fluid Impact, the pump noise is reduce.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.2071-2075
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• 2003

Pressure variation is one of the major sources on noise emission in the oil hydraulic piston pumps. Therefore, it is necessary to clarify about pressure variation characteristics of the oil hydraulic piston pumps to reduce noise. Pressure variations in a cylinder at trapping region were measured during pump working period with discharge pressures, rotational speeds. The effect of pre-compression of the discharge port with three types valve plates also investigated. It was found that the pressure variation characteristics of oil hydraulic piston pumps deeply related with pre-compression design of the discharge port. Also, it was found that the pressure overshoot at trapping region can reduce by use of pre-compression at the end of the discharge port in valve plate

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.557-558
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• 2006

In this paper, the hysteresis characteristics by bias stress in organic thin film transistors using inkjet printing were investigated. Electron trapping increased threshold voltage for positive gate bias stress and hole trapping decreased threshold voltage for negative gate bias stress. From these phenomena, highly reproducible measurement method which minimized threshold voltage shift by choosing the proper range of gate voltage was suggested. Using this measurement method, we found that electron trapping as well as hole trapping had important influence on hysteresis characteristics.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.16-19
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• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.115-120
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• 1993

본 연구에서는 dry oxide와 wet oxide로 MOS capacitor를 제작하여 avalanche 전자주입 실험으로 산화막의 캐리어 트랩핑특성을 조사하였다. dry oxide에서는 avalanche 전자주입 시 전자 trapping이 주도적으로 일어났다. wet oxide에서는 주입 초기에 전자 trapping이 주도적이다가 hole trapping이 주도적으로 바뀌게 되는 turn-around 현상이 일어났다. 주입시간이 길어지면 다시 전자 trapping이 주도적으로 되는 또 한번의 turn-around 현상이 일어났다. 산화막의 트랩 parameter를 결정하기 위해 실험결과를 기초로 하여 종류가 다른 여러 트랩을 가지는 계에 대한 캐리어 트랩핑 이론식을 세워서 실험결과와 curve-fitting한 결과 실험치와 잘 일치하는 곡선을 얻었다.

• Journal of the Korean Graphic Arts Communication Society
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• v.3 no.1
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• pp.1-10
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• 1985

In Graphic art reproduction process it is important to realize that which set of inks and their densities (film thickness) and which set of halftone positive should be aimed at. in order to meet the demand for good color reproduction. There have been various studies to calculation the color reproduction of the graphic arts. however. these study were based on the assumed characteristics of the materials. In this study the relationship between wet-trapping (wet on wet-printing) and increases of ink layer and printing sequence are examined.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.990-992
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• 1998

Resonance radiation trapping has a great influence on the characteristics of gas discharge. We calculate the spatial and spectral distribution of photons by Monte Carlo method in AC PDP cell.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.