• Title/Summary/Keyword: Trap generation

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Design and Implementation of Web-based SNMP Fault Management System Using Double Message Broker (이중 메시지 브로커를 이용한 웹기반 SNMP 장애관리시스템 설계 및 구현)

  • 이위혁;백승진;송재원
    • Proceedings of the IEEK Conference
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    • 2002.06a
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    • pp.89-92
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    • 2002
  • It is important that fault management of devices which is composing network in the next-generation internet environment. It is best method of operating network safely and efficiently. In this paper, we have suggested double message broker architecture to transmit trap messages in web-based fault management system using Java technologies. The double message broker fault management system shows that manager can do its own job efficiently

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Self-sustainable Operation of a 1kW class SOFC System (1kW급 고체산화물 연료전지 발전시스템 자열운전)

  • Lee, Tae-Hee;Choi, Jin-Hyeok;Park, Tae-Sung;Yoo, Young-Sung
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.57-60
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    • 2008
  • KEPRI has studied planar type SOFC stacks using anode-supported single cells and kW class co-generation systems for residential power generation. A 1kW class SOFC system consisted of a hot box part, a cold BOP part and a water reservoir. A hot box part contains a SOFC stack made up of 48 single cells and ferritic stainless steel interconnectors, a fuel reformer, a catalytic combustor and heat exchangers. Thermal management and insulation system were especially designed for self-sustainable operation. A cold BOP part was composed of blowers, pumps, a water trap and system control units. When a 1kW class SOFC system was operated at $750^{\circ}C$ with hydrogen after pre-treatment process, the stack power was 1.2kW at 30 A and 1.6kW at 50A. Turning off an electric furnace, the SOFC system was operated using hydrogen and city gas without any external heat source. Under self-sustainable operation conditions, the stack power was about 1.3kW with hydrogen and 1.2kW with city gas respectively. The system also recuperated heat of about 1.1kW by making hot water.

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The Study of Reliability by SILC Characteristics in Silicon Oxides (SILC 특성에 의한 실리콘 산화막의 신뢰성 연구)

  • 강창수
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.17-20
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    • 2002
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

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Physics and current density-voltage characteristics of $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells ($a-Si_{1-x}Ge_x:H$ 화합물(化合物) p-i-n 태양전지(太陽電池)의 물리(物理) 및 전류밀도(電流密度)-전압(電壓) 특성(特性))

  • Kwon, Young-Shik
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1435-1438
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    • 1994
  • The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

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Characteristics of AC Hot-carrier-induced Degradation in nMOS with NO-based Gate Dielectrics (NO기반 게이트절연막 NMOS의 AC Hot Carrier 특성)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.586-591
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    • 2004
  • We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

A Building Method of High Availability Protection Architecture in Next Generation Network (NGN) Information Security System (차세대통신망(NGN) Infrastructure에서의 정보보호시스템 고가용성 차단구조 설계)

  • Noh, Si-Choon;Bang, Kee-Chun
    • Journal of Digital Contents Society
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    • v.8 no.4
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    • pp.483-489
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    • 2007
  • The high availability of information security system shall be primarily studied in relation to the Next Generation Network(NGN) Information Security infrastructure, because it is very important to maintain availability at each moment as a variety of intrusions occur continuously. The high availability of the security system can be realized with the topology and configuration properly defined to fully utilize the recovery function of the security system in the thoroughly planned optimized method. The active-active high availability on the NGN information security infrastructure system in is assured by letting the failover mechanism operate upon the entire structure through the structural design and the implementation of functions. The proposed method reduces the system overload rating due to trouble packets and improves the status of connection by SNMP polling trap and the ICMP transport factor by ping packet.

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Container Vulnerability Intruder Detection Framework based on Memory Trap Technique (메모리 트랩기법을 활용한 컨테이너 취약점 침입 탐지 프레임워크)

  • Choi, Sang-Hoon;Jeon, Woo-Jin;Park, Ki-Woong
    • The Journal of Korean Institute of Next Generation Computing
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    • v.13 no.3
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    • pp.26-33
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    • 2017
  • Recently container technologies have been receiving attention for efficient use of the cloud platform. Container virtualization technology has the advantage of a highly portable, high density when compared with the existing hypervisor. Container virtualization technology, however, uses a virtualization technology at the operating system level, which is shared by a single kernel to run multiple instances. For this reason, the feature of container is that the attacker can obtain the root privilege of the host operating system internal the container. Due to the characteristics of the container, the attacker can attack the root privilege of the host operating system in the container utilizing the vulnerability of the kernel. In this paper, we propose a framework for efficiently detecting and responding to root privilege attacks of a host operating system in a container. This framework uses a memory trap technique to detect changes in a specific memory area of a container and to suspend the operation of the container when it is detected.

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes (4H-SiC PiN 다이오드의 깊은 준위 결함에 따른 전기적 특성 분석)

  • Tae-Hee Lee;Se-Rim Park;Ye-Jin Kim;Seung-Hyun Park;Il Ryong Kim;Min Kyu Kim;Byeong Cheol Lim;Sang-Mo Koo
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.111-115
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    • 2024
  • Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

Effects of Achyranthes Radix Extracts on Osteoblasts and Osteocalsts

  • Kim, Kang-Yong;Kim, Se-Won;Kim, Jung-Keun;Ko, Seon-Yle
    • International Journal of Oral Biology
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    • v.30 no.2
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    • pp.39-45
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    • 2005
  • The present study was performed to investigate whether Achyranthes Radix extracts play roles in the bone metabolism. Three kinds of Achyranthes Radix extracts (methylene chloride (MC), ethylacetate (Ea), and water (W)) were used for bioassay. We examined cellular activities of osteoblasts by measurement of cell proliferation rate, alkaline phosphatase (ALP) activity, and calcified nodule formation. Osteoclast generation was assayed by measuring the number of tartrate-resistant acid phosphatase (TRAP) (+) multinucleated cells after culture of osteoclast precursor cells. There was a maximum 20% increase in proliferation rate of osteoblastic cells after treatment with MC. First and second subfraction of MC layer increased proliferation of osteoblast. Ea layer and second subfraction of MC layer increased ALP activity. Also MC layer and second subfraction of MC layer from Achyranthes Radix extracts increased the calcified nodule. MC layer and second subfraction of MC layer from Achyranthes Radix extracts significantly decreased in the number of TRAP (+) multinucleated cells. Taken together, Achyranthes Radix stimulates the proliferation and bioactivities of bone-forming osteoblasts, and inhibits activities of bone-resorbing osteoclasts.

Study of Injection Molding Process of Shift Lever Using Injection Molding Analysis (사출성형해석을 통한 자동차 레버쉬프트의 사출공정에 관한 연구)

  • Park, Chul-Woo;Lee, Boo-Youn;Lee, Sang-Min
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.14 no.6
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    • pp.7-13
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    • 2015
  • The production processes were reviewed through the injection analysis of the shift lever as a core component of an auto lever installed in the automatic transmission of cars. The injection analysis was carried out for the shift lever and rod among the components in a shift lever module. The shift lever and rod are designed for injection molding with the insertion of a tube, a pin cable plate, and a steel rod for securing the strength of the product. The charging time, failure of injection molding, weld line, air trap, and deformation were reviewed according to this insert. Analyses on various gate positions were carried out for reviewing the cultivation and deformation of fiber around major components, such as the generation section of manipulation feeling and assembly section, so that optimal gate conditions might be reviewed and reflected in the mold design. Finally, we plan to compare the analysis results with the production of trial products.