• Korean Journal of Materials Research
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• v.15 no.2
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.184-184
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• 2006

We have succeeded in the preparation of high molecular weight polybenzimidazoles by solution polycondensation of 3,3'-diaminobenzidine tetrahydrochloride with isophthalic acid, terephthalic acid, or with their derivatives using polyphosphoric acid both as solvent and as condensing agent. Also, we modified phosphoric acid into fluoroalkyl-phosphonic acids[F-PA]. The main reasons are as follows, first of all F-PAs are stronger acids than PA and alkylphosphonic acids which should promote proton hopping and transport. In addition, F-PA has weaker adsorption onto Pt which help to prevent electrocatalyst poisoning and promote higher oxygen reduction activity. The ionic conductivity of 85%-H3PO4 doped membranes show $10^{-2}\;Scm^{-1}\;to\;3{\times}10^{-2}\;Scm^{-1}\;at\;150^{\circ}C$ MEA with 2 %-added electrolyte shows slightly higher cell voltage than the others.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

• Progress in Superconductivity and Cryogenics
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• v.1 no.2
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• pp.8-14
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• 1999

In this study, acoustic emission(AE) technique has been applied to detecting quench which is one of the serious peoblems to assure the integrity of superconducting coil at cryogenic temperature. The characteristics of AE parameters have been analyzed by correlating with the number of quenches, whinding tension of superconducting coil and charge rate of transport current. The quench localization was also performed using AE signals and there was also good correlation between quench current and AE parameters such as AE energy and AE events. In this study, it was confirmed that AE signals were mainly due to the conductor motion which caused by premature quenching. It was also found that optimized winding tension at superconducting coil was needed to prevent quench caused by conductor motion.

• 한국생물공학회:학술대회논문집
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• 2000.11a
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• pp.183-186
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• 2000

Recombinant E. coli JM109(pZH3-5/pMT) harboring manganese transport gene(mntA) and metal sequestering protein, metallothionein(MT), was cultivated to accumulate cadmium in aqueous phase. Bioaccumulation followed Michaelis-Menten type kinetics. Equilibrium isotherm showed Langmuir type isotherm. IPTG induction cell showed fast $Cd^{2+}$ uptake and had higher uptake rate than wild type and no-induced cell. The optimum pH and temperature for $Cd^{2+}$ uptake was 7 and $37^{\circ}C$, respectively. Manganese (0.01M) inhibited the $Cd^{2+}$ accumulation. However, $Cu^{2+}$, $Zn^{2+}$ and $Pb^{2+}$ did not affect the $Cd^{2+}$ bioaccumulation.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.519-526
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• 1987

TiC was deposited onto several substrate steels by the Chemical Vapor Deposition technique from TiCl4-CH4-H2 gas mixtures in the horizontal resistance furnace. Deposition rates and morphologies of the coatings were investigated with the carbon contents. Deposition thickness increased linearly with the deposition time in the Presence of CH4 gas. The various interlayers of coating by EDS and X-ray Diffraction were proved as Cr7C3 and Fe3C. Chromium contents did not affect the preferred orientation of TiC deposit. The deposition was controlled by a mass transport and a surface reaction in case of 1 wt% C-5.25 wt% Cr steel irrespective of deposition temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.357-362
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• 2006

OLEDs are becoming established as a commercially viable flat panel display technology of choice of the $21^{st}$ century because of its lightweight, fast response time, lower thickness than LCD's and potentially low cost (1-2). For the OLEDs to function effectively, highly thermally stable materials, which offer high efficiency and long operational lifetimes are required. To achieve long lifetime, highly stable charge (both holes and electrons) transporters are essential. OLED-T provides these materials as well as fluorescent and phosphorescent dopants. This paper reports a unique patented hole injector (E9363) and an electron transporter (E246) that increases the lifetime and efficiency and reduces operating voltage. Further, an electron injector, EEI-101, which evaporates at a very low temperature of $300^{\circ}C$ as opposed to the conventional LiF, which requires $580^{\circ}C$, is also presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1148-1151
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• 2005

Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPc(20 nm)/$C_{60}$(40 nm)/BCP/Al(150 nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1500-1502
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• 2001

Plate-type ${\beta}-FeSi_2$ single crystals were grown using $FeSi_2$, Fe, and Si as starting materials by the chemical transport reaction method. The ${\beta}-FeSi_2$ single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the ${\beta}-FeSi_2$ single crystal. The electrical resistivity values was 1.608$\Omega$cm and electron mobility was $3{\times}10^{-1}cm^2/V{\cdot}sec$ at room temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.1
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• pp.33-41
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• 1988

In this work, two-dimensional finite element method code is developed to characterize GaAs MESFET devices. Here, two coupled equations, i.e., Poisson equation and current continuity equation, are solved iteratively by Gummel's scheme. The energy transport equation is incorporated with these to include the temperature information. By this method, the GaAs MESFET device is analyzed by calculating the potential and electron concentration distribution. from these the I-V characteristics and other device parametersare obtained and discussed. It is comfirmed that this method can be effectively used in the device level simulation and characterization and can be extended to the small and large signal analysis of the device.