• Title/Summary/Keyword: Transport temperature

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Numerical Simulation on the Formation and Pinching Plasma in X-pinch Wires on 2-D Geometry (자기유체역학 코드를 이용한 축 대칭 엑스 핀치 플라즈마 구조의 2차원 전산해석)

  • Byun, Sangmin;Na, Yong-Su;Chung, Kyoung-Jae;Kim, Deok-Kyu;Lee, Sangjun;Lee, Chanyoung;Ham, Seunggi;Ryu, Jonghyeon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.24 no.2
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    • pp.211-218
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    • 2021
  • This paper deals with the computational work to characterize the formation and pinching of a plasma in an X-pinch configuration. A resistive magnetohydrodynamic model of a single fluid and two temperature is adopted assuming a hollow conical structure in the (r,z) domain. The model includes the thermodynamic parameter of tungsten from the corrected Thomas-Fermi EOS(equation of state), determining the average ionization charge, pressure, and internal energy. The transport coefficients, resistivity and thermal conductivity, are obtained by the corrected Lee & More model and a simple radiation loss rate by recombination process is considered in the simulation. The simulation demonstrated the formation of a core-corona plasma and intense compression process near the central region which agrees with the experimental observation in the X-pinch device at Seoul National University. In addition, it confirmed the increase in radiation loss rate with the density and temperature of the core plasma.

Saltwater Intrusion Monitoring Evaluation through Automatic Vertical Line Method in a Costal Aquifer of the Eastern Part of Jeju Island (수직 라인 관측시스템을 이용한 제주 동부 해안대수층에서 해수침투 모니터링 평가)

  • Jang, Hojune;Ha, Kyoochul;Hwang, Inuk;Kim, Gee-Pyo;Park, Won-Bae
    • Journal of Soil and Groundwater Environment
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    • v.26 no.3
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    • pp.1-13
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    • 2021
  • Groundwater monitoring is commonly practiced with real-time sensors placed in several depth spots in aquifer. However, this method only provides monitoring data at the point where the sensors are installed. In this study, we developed a vertical line monitoring system (VLMS) that can provide continuous data of groundwater parameters along the vertical depth. The device was installed in a well located on the coast of the eastern part of Jeju island to monitor electrical conductivity, temperature, salinity, pH, dissolved oxygen, and oxidation-reduction potential over approximately 3 months from September 11 to December 3, 2020. The results indicated that the groundwater levels fluctuated with the tidal change of seawater level, and the upper and lower boundaries of the freshwater and saltwater zone in the groundwater were located at below 16 m and 36 m of mean sea level, respectively. There was a large variation in EC values during the high tide and temperature change was the greatest during flow tide. Although further investigation is needed for improvement of the device to obtain more accurate and reliable data, the device has a potential utility to provide fundamental data to understand the seawater intrusion and transport mechanisms in coastal aquifers.

Deuterium ion irradiation impact on the current-carrying capacity of DI-BSCCO superconducting tape

  • Rajput, M.;Swami, H.L.;Kumar, R.;Bano, A.;Vala, S.;Abhangi, M.;Prasad, Upendra;Kumar, Rajesh;Srinivasan, R.
    • Nuclear Engineering and Technology
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    • v.54 no.7
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    • pp.2586-2591
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    • 2022
  • In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

A Study on the Electrochemical Kinetics of Electrowinning Process of Valuable Metals Recovered from Lithium-ion Batteries (폐리튬이온전지로부터 유가금속 회수를 위한 전해채취 공정 전기화학 반응속도론적 연구)

  • Park, Sung Cheol;Kim, Yong Hwan;Lee, Man Seung;Son, Seong Ho
    • Resources Recycling
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    • v.31 no.5
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    • pp.59-66
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    • 2022
  • To investigate the rate-determining step of nickel, cobalt and copper electrowinning, experiments were conducted by varying the electrolyte temperature and agitation speed using a rotating disc electrode. Analyzing the rate-determining step by calculating the activation energy in the electrowinning process, it was found that nickel electrowinning is controlled by a mixed mechanism (partly by chemical reaction and partly by mass transport), cobalt is controlled by chemical reaction, and copper is controlled by mass transfer. Electrowinning of nickel, cobalt and copper was performed by varying the electrolyte temperature and agitation speed, and the comparison of the current efficiencies was used the determine the rate-determining step.

Se Incorporation in VTD-SnS by RTA and Its Influence on Performance of Thin Film Solar Cells

  • Yadav, Rahul Kumar;Kim, Yong Tae;Pawar, Pravin S.;Heo, Jaeyeong
    • Current Photovoltaic Research
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    • v.10 no.2
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    • pp.33-38
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    • 2022
  • Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (JSC). In this study, we have demonstrated a path to overcome deficiency in JSC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (TRTA), also it is observed that film structure changes from cube-like to plate-like structure with TRTA. The maximum JSC of 23.1 mA cm-2 was observed for 400℃ with an open-circuit voltage (VOC) of 0.140 V for the same temperature. The highest performance of 2.21% with JSC of 18.6 mA cm-2, VOC of 0.290 V, and fill factor (FF) of 40.9% is observed for a TRTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in JSC is approximately 80% while a loss in VOC of about 20% has been observed.

Investigation of the Bonding Stress of the 2nd Barrier for LNG Carrier Cargo Containment System Considering Various Working Conditions (다양한 작업 조건을 고려한 LNG 운반선 화물창 2차 방벽의 극저온 접착강도 분석)

  • Jeong-Hyeon Kim;Hee-Tae Kim;Byeong-Kwan Hwang;Seul-Kee Kim;Tae-Wook Kim;Doo-Hwan Park;Jae-Myung Lee
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.3
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    • pp.499-507
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    • 2023
  • The core of the liquefied natural gas (LNG) carrier cargo containment system (CCS) is to store and transport LNG safely under temperatures below -163 degrees Celsius. The secondary barrier of the LNG CCS is adopted to prevent LNG leakage from CCS to the ship's hull structure. Recently, as the size of the LNG CCS increases, various studies have been conducted on the applied temperature and load ranges. The present study investigates the working condition-dependent bonding strength of the PU15 adhesives of the secondary barrier. In addition, the mechanical performance is analyzed at a cryogenic temperature of -170 degrees Celsius, and the failure surface and failure mode are investigated depending on the working condition of the bonded process. Even though the RSB and FSB-based fracture mode was confirmed, the results showed that all the tested scenarios satisfied the minimum requirement of the regulation.

Effects of Neutral Particle Beam on Nano-Crystalline Silicon Thin Film Deposited by Using Neutral Beam Assisted Chemical Vapor Deposition at Room Temperature

  • Lee, Dong-Hyeok;Jang, Jin-Nyoung;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.254-255
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    • 2012
  • Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

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Study on Torrefaction Characteristics of Solid Biomass Fuel and Its Combustion Behavior (바이오매스 고형연료의 반탄화 특성 및 반탄화물의 연소특성에 관한 연구)

  • Lee, Weon Joon
    • Journal of the Korea Organic Resources Recycling Association
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    • v.23 no.4
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    • pp.86-94
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    • 2015
  • Torrefaction is a thermochemical process proceeded at the temperature around $250^{\circ}C$ in an inert gas condition. By torrefaction, the hemicellulose portions contained in biomass are broken down to change into the volatile gas which is removed from biomass eventually. The main purpose of biomass torrefaction is to improve the energy density of the biomass to minimize the transport energy consumption, though the flammability can be elevated for transportation. In this study two types of solid biomass fuel, waste wood and rice straw, were torrefied at various temperature range from $200^{\circ}C$ to $300^{\circ}C$ to evaluate the torrefied biomass characteristics. In addition torrefied biomass were tested to evaluate the combustion characteristics using TGA (Thermogravimetric Analysis). After the torrefaction of biomass, the C/H (carbon to hydrogen ratio) and C/O (carbon to oxygen ratio) were measured for aquisition of bio-stability as well as combustion pattern. Generally C/H ratio implies the soot formation during combustion, and the C/O ratio for bio-stability. By torrefaction temperature at $300^{\circ}C$, C/H ratio and C/O ratio were increased by two times for C/H and three times for C/O. The torrefied biomass showed similar TGA pattern to coal compared to pure biomass; that is, less mass decrease at lower temperature range for torrefied biomass than the pure biomass.

A study on simulation modeling of the underground space environment-focused on storage space for radioactive wastes (지하공간 환경예측 시뮬레이션 개발 연구-핵 폐기물 저장공간 중심으로)

  • 이창우
    • Tunnel and Underground Space
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    • v.9 no.4
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    • pp.306-314
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    • 1999
  • In underground spaces including nuclear waste repository, prediction of air quantity, temperature/humidity and pollutant concentration is utmost important for space construction and management during the normal state as well as for determining the measures in emergency cases such as underground fires. This study aims at developing a model for underground space environment which has capabilities to take into account the effects of autocompression for the natural ventilation head calculation, to find the optimal location and size of fans and regulators, to predict the temperature and humidity by calculating the convective heat transfer coefficient and the sensible and latent heat transfer rates, and to estimate the pollutant levels throughout the network. The temperature/humidity prediction model was applied to a military storage underground space and the relative differences of dry and wet temperatures were 1.5 ~ 2.9% and 0.6 ~ 6.1%, respectively. The convection-based pollutant transport model was applied to two different vehicle tunnels. Coefficients of turbulent diffusion due to the atmospheric turbulence were found to be 9.78 and 17.35$m^2$/s, but measurements of smoke and CO concentrations in a tunnel with high traffic density and under operation of ventilation equipment showed relative differences of 5.88 and 6.62% compared with estimates from the convection-based model. These findings indicate convection is the governing mechanism for pollutant diffusion in most of the tunnel-type spaces.

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Annealing Effect on Magneto-transport Properties of Amorphous Ge1-xMnx Semiconductor Thin Films (비정질 Ge1-xMnx 박막의 자기수송특성에 미치는 열처리 효과)

  • Kim, Dong-Hwi;Lee, Byeong-Cheol;Lan Anh, Tran Thi;Ihm, Young-Eon;Kim, Do-Jin;Kim, Hyo-Jin;Yu, Sang-Soo;Baek, Kui-Jong;Kim, Chang-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.4
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    • pp.121-125
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    • 2009
  • Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.