• Bulletin of the Korean Chemical Society
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• v.35 no.5
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• pp.1469-1478
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• 2014

Use of acetonitrile in electrolytes promotes better operation of supercapacitors. Recent efforts show that electrolytes containing acetonitrile can also function in a wide range of operating temperatures. Therefore, this paper addresses the dielectric relaxation processes, structure and dynamic properties of the bulk acetonitrile at various temperatures. Systems of acetonitrile were modeled using canonical ensemble and simulated by employing Molecular Dynamics method. Results show that interactions among the molecules were correlated within a cut-off radius while parallel and anti-parallel arrangements are observed beyond this radius at relatively high and low temperatures respectively. Furthermore, effects of C-C-N and C-H bending modes were greatly appreciated on the power spectral density of time rate change of dipole-dipole correlations whereas frequency shifts were observed on all modes at the lowest temperature under consideration. Linear variations with temperature were depicted for reorientation times and self-diffusion coefficients. Shear viscosity was also computed with a good accuracy within a certain range of the temperature as well.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.85-90
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• 2003

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1088-1091
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4'-diamine (TPD) as a hole transport and trim(8-hydroxyquinoline) alulninum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.129-134
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• 2005

A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystal puller. The turbulent modeling was used to simulate the transport phenomena in 18' single crystal growing process. For small crucible angular velocity, the natural convection is dominant. As the crucible angular velocity is increased, the forced convection is increased and the distribution of temperature profiles is broadened. The cusp magnetic field reduces effectively the natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar in the case of conduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.376-382
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• 2001

Magnetic and transport properties in the ceramic specimen of L $a_{0.7}$S $r_{0.3}$Fe $O_3$ with orthohombic structure has been investigated. Weak ferromagnetism has been observed in a ceramic sample of L $a_{0.7}$S $r_{0.3}$Fe $O_3$. Large dielectric relaxation of Debye type is observed in paramagnetic states within the temperature range of 130K~200K. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dispersion is related to holes hopping between F $e^{3+}$ and F $e^{4+}$ ions. The temperature dependencies of thermoelectric power and Dc conductivity suggest that the charge carrier responsible for the conduction are strongly localized. These experimental results have been interpreted in terms of a hopping process involving small polaron.n.laron.n.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.89-95
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• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.175-180
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• 2008

In this study, the thermoelectric power and resistivity of the perovskite manganite $La_{0.75}Ba_{0.25}MnO_3$ were investigated in the temperature range 300K-1200K. The electrical resistivity and thermoelectric power indicate a transport mechanism dominated by adiabatic small-polaron hopping. The power factor increases from $2{\times}10^{-6}W/mK^2$ to $1{\times}10^{-5}W/mK^2$ as to the temperature increases from 400K to 1200K, which indicates that the compound is highly feasible as a thermoelectric material at high temperatures.