• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.47-56
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• 2008

An RFID system comprises a reader and a tag, and this paper focuses on a tag design. A UHF tag is activated by energy supply using electromagnetic waves and energy reflection through impedance mismatching. The tag uses a $0.25{\mu}m$ CMOS process and comprises a digital part executing tag protocols, a 512-bit memory, and an analog part having a rectifier, a modulation/demodulation unit, a clock generator, etc. The total dimension of the tag, including a saw line, is $750{\mu}m*750{\mu}m$ and the power consumption of the tag consumption power is about $17.8{\mu}W$ at a supply voltage of 2V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.9-15
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• 2007

In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.