• Journal of Electrical Engineering and Technology
• /
• v.5 no.1
• /
• pp.146-150
• /
• 2010

A new type of dye-sensitized solar cell (DSC) based on a porous type Ti electrode without using a transparent conductive oxide (TCO) layer is fabricated for low-cost high-efficient solar cell application. The TCO-free DSC is composed of a glass substrate/dye-sensitized $TiO_2$ nanoparticle/porous Ti layer/electrolyte/Pt sputtered counter electrode. The porous Ti electrode (~350 nm thickness) with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3{^-}$ through the hole. The vacuum annealing treatment is important with respect to the interfacial necking between the metal Ti and porous $TiO_2$ layer. The efficiency of the prepared TCO-free DSC sample is about 3.5% (ff: 0.48, $V_{oc}$: 0.64V, $J_{sc}$: 11.14 mA/$cm^2$).

• Korean Journal of Materials Research
• /
• v.21 no.6
• /
• pp.341-346
• /
• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.282-285
• /
• 2012

It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

• Korean Journal of Materials Research
• /
• v.16 no.7
• /
• pp.449-454
• /
• 2006

Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.789-794
• /
• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• Journal of Powder Materials
• /
• v.26 no.1
• /
• pp.45-48
• /
• 2019

Quantum dots (QDs) are an attractive material for application in solar energy conversion devices because of their unique properties including facile band-gap tuning, a high-absorption coefficient, low-cost processing, and the potential multiple exciton generation effect. Recently, highly efficient quantum dot-sensitized solar cells (QDSCs) have been developed based on CdSe, PbS, CdS, and Cu-In-Se QDs. However, for the commercialization and wide application of these QDSCs, replacing the conventional rigid glass substrates with flexible substrates is required. Here, we demonstrate flexible CISe QDSCs based on vertically aligned $TiO_2$ nanotube (NT) electrodes. The highly uniform $TiO_2$ NT electrodes are prepared by two-step anodic oxidation. Using these flexible photoanodes and semi-transparent Pt counter electrodes, we fabricate the QDSCs and examine their photovoltaic properties. In particular, photovoltaic performances are optimized by controlling the nanostructure of $TiO_2$ NT electrodes.

• Journal of the Korean Physical Society
• /
• v.73 no.11
• /
• pp.1787-1793
• /
• 2018

The power conversion efficiency of perovskite solar cells has reached 23.3%. Although significant developments have been made through intensive studies, the stability issue is still challenging. Passivation of perovskite solar cells with a transparent polymer provides better stability; however, there are a few disadvantages of organic polymer such as low thermal stability, weak adhesion and the lack of water retention ability. In this work, we prepared a dual Parylene-F/C layer with 3-methacryloxypropyltrimethoxysilane, A-174, to combine the advantages of organic and inorganic materials. As a result, A-174 treated dual Parylene-F/C layer demonstrated improved passivation effects compared to a single Parylene layer due to the strong binding of Parylene and the water retention ability by $SiO_2$ formed from A-174. This synergetic effects can be expanded to the combination of other organic materials and organosilane compounds.

• Current Photovoltaic Research
• /
• v.11 no.4
• /
• pp.114-117
• /
• 2023

Transparent Photovoltaic (PV) modules have recently been in the spotlight because they can be applied to buildings and vehicles. However, crystalline silicon (c-Si) solar modules, which account for about 90% of the PV module market, have the disadvantage of applying transparent PV modules due to their unique opacity. Recently, a see-through type PV module using a crystalline silicon solar strap has been developed. However, there is a problem due to a decrease in aesthetics due to the metal ribbon in the center of the see-through type PV module and difficulty bonding the metal ribbon due to the low voltage output of the strap. In this study, to solve this problem, we developed a fabrication process of series connected c-Si solar strap cells using the c-Si solar cells. We succeeded in fabricating a series connected strap with a width of 2-10 mm, and we plan to manufacture an aesthetic see-through type c-Si PV module.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.234-234
• /
• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

• Journal of the Korean Ceramic Society
• /
• v.50 no.5
• /
• pp.309-318
• /
• 2013

Graphene has attracted considerable attention since its first production from graphite in 2004, due to its outstanding physical and chemical properties. The development of production methodsfor large scale, high quality graphene films is an essentialstep toward realizing graphene applications such as transparent, conductive film. Chemical deposition methods, using metal catalystsand gaseous carbon sources, have been extensively developed for large area synthesis. In this paper, wereview recent progress ingraphene production, and survey the role of graphene electrodes in various electronic devices such as touch panels, solar cells, solid statelighting and microelectronic devices.