• 한국세라믹학회지
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• 제43권9호
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• pp.532-536
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• 2006

The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.

• 한국세라믹학회지
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• 제27권5호
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• 전기학회논문지
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• 제58권10호
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• pp.1976-1981
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• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• 한국세라믹학회지
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• 제29권4호
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• pp.319-327
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• 1992

Sb-doped SnO2 films were formed on Corning glass 7059 substrate by chemical vapor deposition using simulataneous hydrolysis of SnCl4 and SbCl5. Fairly good transparent conducting film with a low resistivity of ~6$\times$10-4{{{{ OMEGA }}cm and high average optical transparency above ~85% in the range of visible light was obtained at the deposition condition of 50$0^{\circ}C$ and input-gas ratio, [Psbcl5/Psncl4] of 0.05. Film conductivity was improved without loosing optical transparency at light doping of Sb and found to be due to the increase of electron concentration. However, high doping of Sb into SnO2 film largely deteriorated conductivity, optical transparency and crystallinity of the film.

• 한국세라믹학회지
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• 제13권2호
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• 한국세라믹학회지
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• 제31권6호
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• pp.660-670
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• 1994

Transparent, crack-free dried gel monoliths with a composition of LiZr1.5Si2P2O12.5 have been synthesized by the low temperature polymerization of the Sol-Gel technique using metal alkoxides as starting materials. After initial reaction (20~40 min), each metal alkoxide closely paralleled each other during the hydrolysis reactions. The safe drying conditions of gels with no creaks the control of the shrinkage rate. The gels converted into the glass by heat treatment at 75$0^{\circ}C$. FTIR data indicated that the gels were phase separated into silicarich and phosphate-rich regions with the lithium. XRD results showed the formation of crystalline LiH2PO4. The gels dried at 15$0^{\circ}C$ or fired at 75$0^{\circ}C$ contained the residual water. The high ionic conductivity at room temperature for these gels was attributed to the motion of protons.

• 한국세라믹학회지
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• 제40권11호
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• pp.1078-1084
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• 2003

비선형 광학재료 및 광촉매를 개발하기 위하여, $Na_2$O-Nb$_2$ $O_{5}$-Te $O_2$계 유리를 일반적인 용융 및 급냉하는 방법으로 제조하였다. 그리고 $Na_2$O-Nb$_2$ $O_{5}$-Te $O_2$계 유리의 광학적 성질과 나노-결정화거동을 조사하였다. $Na_2$O-Nb$_2$ $O_{5}$-Te $O_2$계 유리의 광학적 성질과 물리적 성질은 다음과 같다. 굴절률(n) 은 2.04$\pm$0.04, 밀도(g/㎤)는 4.87$\pm$0.58, 광 에너지 밴드(eV)는 3.14$\pm$0.04이였다. 나노결정으로 구성된 투명한 결정화유리는 3$50^{\circ}C$에서 l시간 열처리한 후, 이것을 다시 40$0^{\circ}C$에서 l 시간 열처리하여 얻었다. 나노결정으로 구성된 Cubie 결정상은 47$0^{\circ}C$ 이상의 온도에서 새로운 결정상으로 변화하였다.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.324-329
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• 2018

Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국세라믹학회지
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• 제39권3호
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• pp.226-232
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• 2002

적색 칼라 필터 재료인 ${\alpha}-Fe_2O_3$가 고온 제조 공정을 거치는 동안 화학적인 안정성에 관해서 연구한 것이다. PDP(Plasma Display Panel)에 있어서 통상적으로 칼라 필터 층의 위에 사용되고 있는 투명 유전체의 경우는 광의 투과도를 높이기 위하여 ZnO를 첨가한다. ZnO가 포함되어 있는 유전체의 경우는 500$^{\circ}$C 이상에서 ${\alpha}-Fe_2O_3$의 열적 안정성을 감소시켜 칼라 필터로서의 기능을 완전히 상실하게 되어 투명하게 된다. 반면에 ZnO가 포함되지 않는 투명 유전체의 경우는 ${\alpha}-Fe_2O_3$가 적색의 색상을 유지하면서 칼라필터로서의 기능을 유지하고 있었다. ${\alpha}-Fe_2O_3$가 칼라 필터로 기능을 유지하기 위해서는 ${\alpha}-Fe_2O_3$와 접촉하는 투명 유전체는 ZnO가 포함되지 않는 투명 유전체를 사용하여 1차 보호막을 형성한 후 그 위에 ZnO가 포함된 투명 유전체층을 형성하면 적색 칼라 필터가 색상을 유지하게 된다.