• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.18-22
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• 2002

ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.831-841
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• 2010

Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.444-445
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• 2007

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1596-1601
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• 2007

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.219-222
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• 2007

Highly conductive and transparent aluminum doped ZnO thin films (AZO) films have been prepared by r.f. magnetron sputtering processes on poly carbonate (PC) and onto glass as reference. In addition, the electrical, optical properties of the films prepared at various sputtering powers were investigated. The XRD measurements revealed that all of the obtained films were polycrystalline with the hexagonal structure and had a preferred orientation with the c-axis perpendicular to the substrate. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with the resistivity as low as $9.7{\times}10^{-4}\;{\Omega}-cm$ and transmittance over 90% have been obtained by suitably controlling the r.f. power.