• Title/Summary/Keyword: Transparent conductive oxide electrodes

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Fabrication of Stretchable Transparent Electrodes

  • Oh, Jong Sik;Yeom, Geun Young
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.149-156
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    • 2017
  • Recently, stretchable and transparent electrodes have received great attention owing to their potential for realizing wearable electronics. Unlike the traditional transparent electrodes represented by indium tin oxide (ITO), stretchable and transparent electrodes are able to maintain their electrical and mechanical properties even under stretching stress. Lots of research efforts have been dedicated to the development of stretchable and transparent electrodes since they represent the most important engineering platform for the production of wearable electronics. Various approaches using silver nanowires, nanostructured networks, conductive polymers, and carbon-based electrodes have been explored by many world leading research groups. In this review, present and recent advances in the fabrication methods of stretchable and transparent electrodes are discussed.

Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.3
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    • pp.139-141
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    • 2015
  • Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

플렉서블 디스플레이용 투명전극 제조를 위한 ITO 대체소재 연구동향

  • Kim, Seon-Ok;Choe, Su-Bin;Kim, Jong-Ung
    • Ceramist
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    • v.21 no.1
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    • pp.12-23
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    • 2018
  • As the flexible displays have been considered as a breakthrough to make a new electronics category, transparent electrodes have also confronted with an emerging issue, i.e., they also need to be mechanically flexible. For this to be made possible, a transparent electrode capable of withstanding large amounts of strain must be developed. Indium tin oxide (ITO) has been one of the most widely adopted transparent electrodes for displays and other transparent electronics, mainly supported by its high electrical conductivity and optical transparency. However, its brittle nature has forced the display industry to search for other alternatives. Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Here we reviewed recently-published research works introducing flexible displays, all of which are employing the novel candidates for a conducting material.

Fabrication of Transparent Conductive Oxide-less Dye-Sensitized Solar Cells Consisting of Titanium Double Layer Electrodes (이중층 티타늄 전극으로 구성된 TCO-less 염료감응형 태양전지 제작에 관한 연구)

  • Shim, Choung-Hwan;Kim, Yun-Gi;Kim, Dong-Hyun;Lee, Hae-June;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.1
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    • pp.114-118
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    • 2011
  • Dye-Sensitized Solar Cells(DSSCs) consist of a titanium dioxide($TiO_2$) nano film of the photo electrode, dye molecules on the surface of the $TiO_2$ film, an electrolyte layer and a counter electrode. But two transparent conductive oxide(TCO) substrates are estimated to be about 60[%] of the total cost of the DSSCs. Currently novel TCO-less structures have been investigated in order to reduce the cost. In this study, we suggested a TCO-less DSSCs which has titanium double layer electrodes. Titanium double layer electrodes are formed by electron-beam evaporation method. Analytical instruments such as electrochemical impedance spectroscopy, scanning electron microscope were used to evaluate the TCO-less DSSCs. As a result, the proposed structure decreases energy conversion efficiency and short-circuit current density compared with the conventional DSSCs structure with FTO glass, while internal series impedance of TCO-less DSSCs using titanium double layer electrodes decreases by 27[%]. Consequently, the fill factor is improved by 28[%] more than that of the conventional structure.

Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application (투명 전도성 산화물 전극으로의 응용을 위한 산화아연(ZnO) 코팅막의 습식 식각 특성연구)

  • Yoo, Dong-Geun;Kim, Myoung-Hwa;Jeong, Seong-Hun;Boo, Jin-Hyo
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.73-79
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    • 2008
  • In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

Highly Conductive and Transparent Electrodes for the Application of AM-OLED Display

  • Ryu, Min-Ki;Kopark, Sang-Hee;Hwang, Chi-Sun;Shin, Jae-Heon;Cheong, Woo-Seok;Cho, Doo-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Lee, Jeong-Ik;Chung, Sung-Mook;Yoon, Sung-Min;Chu, Hye-Yong;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.813-815
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    • 2008
  • We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

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Trends of Recycling of Indium-Tin-Oxide (ITO) Target Materials for Transparent Conductive Electrodes (TCEs) (투명전극용 인듐 주석 산화물 타겟 소재의 재자원화 동향)

  • Hong, Sung-Jei;Lee, Jae Yong
    • Clean Technology
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    • v.21 no.4
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    • pp.209-216
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    • 2015
  • Indium-Tin-Oxide (ITO) is a material that is widely used for transparent conductive electrodes (TCEs). Indium (In), chief element of the ITO, is expected to be depleted in the near future owing to its high cost and limited reserves. To overcome the issue, ITO has to be retained by recycling redundant ITO targets after manufacturing processes. In this article, we proposed an efficient recycling way of the redundant ITO targets with investigation of the current recycling tendencies in domestic and foreign countries. As a result, it was revealed that only In is recycled from the redundant targets in domestic and Japan. As well, fabrication of TCEs is being researched with ITO nanoparticles solutions. However, since the TCEs fabricated with ITO target is superior to those with other materials, it is thought that establishment of regeneration technology of ITO itself is demanded for an efficient recycling and fabrication of ITO target.

Effect of Moisture on Cu(In,Ga)Se2 Solar Cell with (Ga,Al) Co-doped ZnO as Window Layer ((Ga,Al)이 도핑된 ZnO를 투명전극으로 가진 Cu(In,Ga)Se2 태양전지에 수분이 미치는 영향)

  • Yang, So Hyun;Bae, Jin A;Song, Yu Jin;Jeon, Chan Wook
    • Current Photovoltaic Research
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    • v.5 no.4
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    • pp.135-139
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    • 2017
  • We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.3
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    • pp.143-145
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    • 2016
  • In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

Investigation of Transparent Conductive Oxide Films Deposited by Co-sputtering of ITO and AZO (ITO와 AZO 동시 증착법으로 제조된 투명전도막의 특성 연구)

  • Kim, Dong-Ho;Kim, Hye-Ri;Lee, Sung-Hun;Byon, Eung-Sun;Lee, Gun-Hwan
    • Journal of the Korean institute of surface engineering
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    • v.42 no.3
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    • pp.128-132
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    • 2009
  • Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.