• 제목/요약/키워드: Transparent conductive oxide

검색결과 289건 처리시간 0.03초

Highly Conductive Flexible Transparent Electrode Using Silver Nanowires & Conducting Polymer

  • Seo, Dong-Min;Kim, Sang-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.547-547
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    • 2012
  • As displays become larger and solar cells become cheaper, there is an increasing need for low-cost transparent electrodes. Intensive effort has been made to replace ITO (Indium Tin Oxide) based transparent electrode with cheap and flexible ones. Among those, silver nanowires have got limelight because of its great conductivity and flexibility. Even though the electric property of the Ag nanowire based transparent electrode surpassed ITO, the optical property needs to be improved (lower transmittance, higher haze). Here, we reported transparent electrode based on Ag nanowires and conducting polymer to improve optical properties. The Ag nanowires are coated onto PET films and the resulting transparent electrode film shows $200ohm/{\Box}$ resistance and > 90% optical transmittance.

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Fabrication of Stretchable Transparent Electrodes

  • Oh, Jong Sik;Yeom, Geun Young
    • Applied Science and Convergence Technology
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    • 제26권6호
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    • pp.149-156
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    • 2017
  • Recently, stretchable and transparent electrodes have received great attention owing to their potential for realizing wearable electronics. Unlike the traditional transparent electrodes represented by indium tin oxide (ITO), stretchable and transparent electrodes are able to maintain their electrical and mechanical properties even under stretching stress. Lots of research efforts have been dedicated to the development of stretchable and transparent electrodes since they represent the most important engineering platform for the production of wearable electronics. Various approaches using silver nanowires, nanostructured networks, conductive polymers, and carbon-based electrodes have been explored by many world leading research groups. In this review, present and recent advances in the fabrication methods of stretchable and transparent electrodes are discussed.

Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제16권3호
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    • pp.139-141
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    • 2015
  • Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화 (A study on the properties of transparent conductive ZnO:Al films on variation substrate temperature)

  • 양진석;성하윤;금민종;손인환;신성권;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.525-528
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    • 2001
  • ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

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로이 응용을 위한 비정질 In-Si-O 다층구조 특성 평가 (Characterization of Amorphous In-Si-O Multilayer for Low Emissivity Applications)

  • 이영선;이상렬
    • 한국전기전자재료학회논문지
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    • 제27권8호
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    • pp.483-485
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    • 2014
  • Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

(Ga,Al)이 도핑된 ZnO를 투명전극으로 가진 Cu(In,Ga)Se2 태양전지에 수분이 미치는 영향 (Effect of Moisture on Cu(In,Ga)Se2 Solar Cell with (Ga,Al) Co-doped ZnO as Window Layer)

  • 양소현;배진아;송유진;전찬욱
    • Current Photovoltaic Research
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    • 제5권4호
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    • pp.135-139
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    • 2017
  • We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

Metal Grids Embedded Transparent Conductive Electrode with Flexibility and Its Applications

  • Jung, Sunghoon;Lee, Seunghun;Kim, Jong-Kuk;Kang, Jae-Wook;Kim, Do-Geun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.314-314
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    • 2013
  • Recently, flexibility is one of the hottest issues in the field of electronic devices. For flexible displays or solar cells, a development of transparent conductive electrodes (TCEs) with flexibility, bendability and foldability is an essential element. Hundreds of nanometers indium-tin-oxide (ITO) films have been widely used and commercialized as a transparent electrode, but their brittleness make them difficulty to apply flexible electronics. Many researchers have been studying for flexible TCEs such as a few layers of graphene sheets, carbon nanotube networks, conductive polymer films and combinations among them. Although gained flexibility, their transmittance and resistivity have not reached those of commercialized ITO films. Metal grids electrode cannot act as TCEs only, but they can be used to lower the resistance of TCEs with few losses of transmittance. However, the possibility of device shortage will be rise at the devices with metal grids because a surface flatness of TCEs may be deteriorated when metal grids are introduced using conventional methods. In our research, we have developed hybrid TCEs, which combined tens of nanometers ITO film and metal grids which are embedded in flexible substrate. They show $13{\Omega}$/${\Box}f$ sheet resistance with 94% of transmittance. Moreover, the sheet resistance was maintained up to 1 mm of bending radius. Also, we have verified that flexible organic light emitting diodes and organic solar cells with the TCEs showed similar performances compared to commercial ITO (on glass substrate) devices.

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Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance

  • Kim, Sungyoung;Kim, Sangbo;Heo, Jaeseok;Cho, Eou-Sik;Kwon, Sang Jik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.187-187
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    • 2015
  • The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

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Physical Properties of Indium Reduced Materials for Transparent Conductive Electrodes

  • Kwak, Seung-Hoon;Kwak, Min-Gi;Hong, Sung-Jei;Ju, Byeong-Kwon;Han, Jeong In
    • Current Photovoltaic Research
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    • 제2권1호
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    • pp.14-17
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    • 2014
  • In this paper, indium reduced materials for transparent conductive electrodes (TCE) were fabricated and their physical properties were evaluated. Two of materials, indium-zinc-tin oxide (IZTO) and aluminum (Al) were selected as TCE materials. In case of IZTO nanoparticles, composition ratios of In, Zn and Sn is 8:1:1 were synthesized. Size of the synthesized IZTO nanoparticles were less than 10 nm, and specific surface areas were about $90m^2/g$ indicating particle sizes are very fine. Also, the IZTO nanoparticles were well crystallized with (222) preferred orientation despite it was synthesized at the lowered temperature of $300^{\circ}C$. Composition ratios of In, Zn and Sn were very uniform in accordance with those as designed. Meanwhile, Al was deposited onto glass by sputtering in a vacuum chamber for mesh architecture. The Al was well deposited onto the glass, and no pore was observed from the Al surface. The sheet resistance of Al on glass was about $0.3{\Omega}/{\square}$ with small deviation of $0.025{\Omega}/{\square}$, and adhesion was good on the glass substrate since no pelt-off part of Al was observed by tape test. If the Al mesh is combined with ink coated layer which is consistent of IZTO nanoparticles, it is expected that the good and reliable metal mesh architecture for TCE will be formed.

파이버 레이저 투명 전극 식각을 통한 염료감응형 태양전지 효율 상승 연구 (A Study on the Improvement of the Dye-sensitized Solar Cell by the Fiber Laser Transparent Conductive Electrode Scribing Technology)

  • 손민규;서현웅;신인영;김진경;최진호;최석원;김희제
    • 전기학회논문지
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    • 제59권12호
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    • pp.2218-2224
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    • 2010
  • Dye-sensitized solar cell (DSC) is a promising alternative solar cell to the conventional silicon solar cell due to several advantages. Development of large scale module is necessary to commercialize the DSC in the near future. A scribing technology of the transparent conductive oxide (TCO) is one of the important technologies on the fabrication of DSC module. A quality of the scribed line on the TCO has a decisive effect on the efficiency of DSC module. Among several scribing technologies, the fiber laser is a suitable for scribing the TCO more precisely and accurately because of their own characteristics. In this study, we try to improve the quality of the TCO scribed line by using the fiber laser. Consequently, the operating parameter of fiber laser is optimized to get the TCO scribed line with good quality. And the fiber laser scribing technology of the TCO is applied to the fabrication of the DSC with optimal operating parameter, operating current 3900mA. As a result, the current density and fill factor are improved and the total efficiency is increased because the internal resistances of DSC such as TCO sheet resistance and the resistance concerned to the electron movement in the $TiO_2$ are reduced. This is analyzed by the electrochemistry impedance spectroscopy (EIS) and the equivalent circuit model of the DSC.