• 제목/요약/키워드: Transparent Target

검색결과 168건 처리시간 0.029초

비접촉 얇은 투명체의 두께 측정에 관한 기초연구 (The Study of Non-contact Thickness Measurement of Thin Transparent Object)

  • 홍준희;정석규
    • 한국정밀공학회지
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    • 제26권12호
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    • pp.62-68
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    • 2009
  • In this paper, we investigate a new method to measure the thickness of thin transparent objects utilizing a step index multi-mode optical fiber sensor. The method mainly depends on the refraction rate of transparent target, the diameter of optical fibers and the distance to reflector. We confirmed the effects of these parameters through the experimental verification tests. The comparison between the theoretical vs. analytical results shows good agreements with each other. The proposed model also enables users to measure the thickness of thin transparent objects without considering the reflection from the target. This approach provides simple, cost-effective and non-contact solutions to measure the thickness.

반응성 스퍼트링에 의한 ITO의 형성과 유전체 소성공정중의 특성변화에 관한 연구 (The Effect of Dielectric Firing Process in PDP on the Properties of ITO Prepared by Reactive RF Sputtering)

  • 남상옥;지성원;손제봉;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.510-514
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화 (The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process)

  • 남상옥;지성원;손제봉;허근도;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Electrical Properties of the Transparent Conducting Oxide Layers of Al-doped ZnO and WO3 Prepared by rf Sputtering Process

  • 강동수;김희성;이붕주;신백균
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.316-316
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    • 2014
  • Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

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SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성 (Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target)

  • 김철;김성동;김은경
    • 한국재료학회지
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    • 제26권4호
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    • pp.222-227
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    • 2016
  • Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

Feasibility of Indium Tin Oxide (ITO) Swarf Particles to Transparent Conductive Oxide (TCO)

  • Hong, Sung-Jei;Yang, DuckJoo;Cha, Seung Jae;Lee, Jae-Yong;Han, Jeong-In
    • Current Photovoltaic Research
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    • 제3권2호
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    • pp.50-53
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    • 2015
  • Indium (In) is widely used for transparent electrodes of photovoltaics as a form of indium tin oxide (ITO) due to its superior characteristics of environmental stability, relatively low electrical resistivity and high transparency to visible light. However, In has been worn off in proportion to growth the In related market, and it leads to raise of price. Although In is obtained from ITO target scarps, much harmful elements are used for the recycling process. To decrease of harmful elements, ITO swarf particles obtained from target scraps was characterized whether it is feasible to transparent conductive oxide (TCO). The ITO swarf was crushed with milling process, and it was mixed with new ITO nanoparticles. The mixed particles were well dispersed into ink solvent to make-up an ink, and it was well coated onto glass substrate. After heat-treatment at $400^{\circ}C$ under $N_2$ rich environments, optical transmittance at 550 nm and sheet resistance of the ITO ink coated layer was 71.6% and $524.67{\Omega}/{\square}$, respectively. Therefore, it was concluded that the ITO swarf was feasible to TCO of touch screen panel.

반응성 직류마그네트론 스퍼터링에 의한 ITO박막 형성에 관한 연구 (The study on formation of ITO by DC reacrive magnetron sputtering)

  • 하홍주;조정수;박정후
    • E2M - 전기 전자와 첨단 소재
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    • 제8권6호
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    • pp.699-707
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    • 1995
  • The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

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스퍼터 ITO박막의 제조 공정 이해 및 활용 (Application and Processes for Sputtered ITO Films)

  • 송풍근
    • 한국표면공학회지
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    • 제50권2호
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    • pp.55-71
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    • 2017
  • Transparent Conductive Oxide (TCO), especially Indium Tin Oxide (ITO) films are almost prepared by DC magnetron sputtering because of the advantage of obtaining homogeneous large area coatings with high reproducibility. The purpose of this report is describe a detailed investigation of key factors dominating electrical and structural properties of sputtered ITO films. It was confirmed that crystallinity and electrical properties of ITO films were strongly depend on the sputtering pressure and kinetic energy of sputtered particles which are expected to have a close relation with the transport processes between target and substrate. And also, nodule formation on the ITO target was suppressed by both $CaCO_3$ addition and decreasing micro-pore in the target. On the other hand, we focused on the characteristics of amorphous TCO film to use as transparent electrode for various applications. To realize high thermoelectric performance, it was tried to control both high electrical conductivity and low thermal conductivity for the amorphous IZO:Sn films.

Effects of Al-doping on IZO Thin Film for Transparent TFT

  • Bang, J.H.;Jung, J.H.;Song, P.K.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.207-207
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    • 2011
  • Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

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투명전극용 인듐 주석 산화물 타겟 소재의 재자원화 동향 (Trends of Recycling of Indium-Tin-Oxide (ITO) Target Materials for Transparent Conductive Electrodes (TCEs))

  • 홍성제;이재용
    • 청정기술
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    • 제21권4호
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    • pp.209-216
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    • 2015
  • 인듐주석산화물(ITO)은 TFT-LCD, OLED 등의 투명전극에 널리 사용되는 소재이다. ITO의 주요 원소인 인듐(In)은 높은 비용과 제한된 매장량 등으로 인해 머지 않아 고갈될 것으로 예측되고 있다. 이에 대처하는 방법은 공정 후 잔류 ITO 타겟을 재활용하여 ITO 소재의 원료를 확보하는 것이다. 본 원고에서는 공정 후 잔류 ITO 타겟의 재자원화 기술 및 시장 동향 고찰 및 효율적인 재활용을 위한 방향을 제시하였다. 그 결과, 현재 국내 및 일본에서 대부분 잔류 ITO 타겟에서 In만을 재자원화하고 있는 것으로 파악되었다. 이외에도 ITO 나노분말 입자를 제조 및 분산한 용액을 이용하여 투명전극을 제작하는 연구개발이 진행되고 있다. 그러나, ITO 타겟을 이용한 투명전극이 다른 대체 기술을 적용한 것보다 우수하기 때문에, 보다 효율적인 ITO 재자원화 및 타겟 제작을 위해 ITO를 동시에 재생하는 기술 확립이 필요한 것으로 보인다.