• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.52-52
• /
• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.8
• /
• pp.174-180
• /
• 2019

In this study, we evaluated and analyzed the properties of polymeric transparent films used in military vehicle covers according to weathering test. Two types of polymer films (Film A and Film B) that are mostly used for military vehicle covers were selected. The weathering treatment condition and tester are described in KS K 0706, and the following weathering times were tested: 0hour, 40hours, 160hours and 320 hours. The tensile strength, elongation and thermal decomposition behavior and optical characteristics were analyzed. The tensile strength tended to decrease - increase - decrease with increasing weathering treatment time in both transparent films. The thermal decomposition temperature gradually decreased. Regarding the optical property, the light transmittance decreased and the haze tended to increase. However, film A showed almost similar optical characteristics after 160-hour weathering treatment.

• Journal of the Korean Ceramic Society
• /
• v.53 no.3
• /
• pp.338-342
• /
• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• International journal of advanced smart convergence
• /
• v.2 no.2
• /
• pp.16-18
• /
• 2013

In this paper, we develop a method to design a flexible thin film audio systems utilizing Polyvinylidene fluoride. The system we designed showed the properties of increased transparency and sound pressure levels. As an input terminal transparent oxide thin film is adopted. In order to provide dielectric insulation, a transparent insulating oxide thin film is coated to obtain double -layered structure. In the range of visible light, the output from the output of the system showed an increased and improved sound pressure level. The piezoelectric polymer film of polyvinylidene fluoride (PVDF) is used to produce mechanical vibration due to the applied electrical voltage signal. An analog electric voltage signal is transformed into sound waves in the audio system.

• 한국전산유체공학회:학술대회논문집
• /
• 2009.04a
• /
• pp.315-320
• /
• 2009

A computational investigation is conducted on free convection from a thin plate having a surface heat source. The thermal configuration simulates the recently-proposed transparent film heater made of a single-walled carbon nanotube film on a glass substrate. The Navier-Stokes computations are carried out to study laminar free convection from the heater. Parallel numerical experiments are performed by using a simplified design analysis model which solve the conduction equation with the boundary conditions utilizing several existing correlations for convective heat transfer coefficient. Comparison leads to the most suitable boundary condition for the thermal model to evaluate the performance evaluation of a transparent thin-film heater.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1598-1601
• /
• 2008

We describe the fabrication of transparent conducting single-walled carbon nanotubes (SWCNTs) film on flexible substrate following the conventional spin coating method. The fabricated film was post treated with diluted acid solution and its electrical and optical characterizations were performed. The electrical conductivity of SWCNTs film was enhanced and the film was found to be attached strongly with substrate after the post treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.253-253
• /
• 2010

The Polymer/MWCNT composite films were fabricated by air-spray method under the 2 kg/$cm^2$ pressure using the multi-walled CNTs solution and the polymer on a $50{\mu}m$ kepton film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion. In order to analysis the microstructure for the fabricated Polymer/MWCNT film, we used the X-ray diffraction (XRD) and SEM.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.13 no.2
• /
• pp.21-27
• /
• 2014

Recently, various biochip environments have been presented. In this study, a novel transparent film with porous membrane windows, which is an essential component in a co-cultured biochip environment, is fabricated using spin-coating, 3D printing, and electrospinning processes. In detail, a transparent polystyrene film was fabricated by means of the spin-coating process followed bywindow cutting, after which apolycaprolactone-chloroform solution was deposited along the window edge to introduce an adhesion layer between the PS film and the PCL nanofibers. Nanofibers were electrospun into the window region using a direct-write electrospinning method. Consequently, it was demonstrated that the fabricated window film could be used in a co-culture biochip environment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.211.1-211.1
• /
• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.151-151
• /
• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.