• Title/Summary/Keyword: Transparent Conductive Electrode

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Development of Online Speller using Non-contact Blink Detection Glasses (비접촉 눈 깜박임 측정 안경형 디바이스를 이용한 실시간 스펠러의 구현)

  • Lee, Jeong Su;Lee, Hong Ji;Lee, Won Kyu;Lim, Yong Gyu;Park, Kwang Suk
    • Journal of Biomedical Engineering Research
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    • v.36 no.6
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    • pp.283-290
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    • 2015
  • We proposed blink based online speller for the locked-in syndrome (LIS) patients, paralyzed in nearly all voluntary muscles expect for the eyes, with a simple and easy-to-use eye blink detection glasses. Electrooculogram (EOG) is the golden standard method of eye movement or blink measurement with Ag/AgCl electrodes. However, this method has several drawbacks such as skin irritation and dehydration of conductive gel. To resolve the shortcomings, we used a blink detection system based on a transparent capacitively coupled electrode, which is conductive indium tin oxide (ITO) films. The films make it possible to measure eye blink without direct skin contact and obstruction of field of view. We finally developed user-friendly blink based online speller with the blink detection system. To classify voluntary and non-voluntary blink, we used the double blink for command of the speller. The online speller experiment result with six healthy subjects shows that mean accuracy is 98.96% and letter per minute (LPM) is 4.73, which are better result by comparison with conventional P300 or auditory brain-computer interface (BCI) paradigm. The result of the experiment demonstrates the possibility of applying the proposed system as a communication method for the LIS patients.

Characterization of AZO thin films grown on various substrates by using facing target sputtering system

  • Lee, Chang-Hyeon;Son, Seon-Yeong;Bae, Gang;Lee, Chang-Gyu;Kim, Hwa-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.123-123
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    • 2015
  • Al doped ZnO(AZO) films as a transparent conductive oxide (TCO) electrode were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by a conventional rf-magneton sputtering (CMS) and a facing target sputtering (FTS) using Al2O3 and ZnO targets. In order to investigation of AZO properties, the structural, surface morphology, electrical, and optical characteristics of AZO films were respectively analyzed. The resistivities of AZO films using FTS system were $6.50{\times}10-4{\Omega}{\cdot}cm$ on glass, $7.0{\times}10-4{\Omega}{\cdot}cm$ on PEN, and $7.4{\times}10-4{\Omega}{\cdot}cm$ on PET substrates, while the values of AZO films using CMS system were $7.6{\times}10-4{\Omega}{\cdot}cm$ on glass, $1.20{\times}10-3{\Omega}{\cdot}cm$ on PEN, and $1.58{\times}10-3{\Omega}{\cdot}cm$ on PET substrates. The AZO-films deposited by FTS system showed uniform surface compared to those of the films by CMS system. We thought that the films deposited by FTS system had low stress due to bombardment of high energetic particles during CMS process, resulted in enhanced electrical conductivity and crystalline quality by highly c-axis preferred orientation and closely packed nano-crystalline of AZO films using FTS system.

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A Comparative Study on the Various Blocking Layers for Performance Improvement of Dye-sensitized Solar Cells

  • Woo, Jong-Su;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.6
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    • pp.312-316
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    • 2013
  • In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

ITO Patterning of an In-line Wet Etch/Cleaning System by using a Reverse Moving Control System (반송제어모드를 이용한 인라인 식각/세정장치의 ITO 전극형성기술)

  • Hong, Sung-Jae;Im, Seoung-Hyeok;Han, Hyung-Seok;Kwon, Sang-Jik;Cho, Eou-Sik
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.4
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    • pp.327-331
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    • 2008
  • An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

Control the Work Function and Plasmon Effect on Graphene Surface Using Metal Nanoparticles for High Performance Optoelectronics

  • Park, Si Jin;Kang, Seong Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.166.1-166.1
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    • 2014
  • We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.

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Effect of Hydrogen on Mechanical S tability of Amorphous In-Sn-O thin films for flexible electronics (수소 첨가에 의한 비정질 ITO 박막의 기계적 특성 연구)

  • Kim, Seo-Han;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.56-56
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    • 2018
  • Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

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Preparation of $SnO_2$ Thin Film Using Reactive DC Magnetron Sputtering (반응성 DC 마그네트론 스퍼터법에 의한 $SnO_2$ 박막재조 및 특성)

  • Jung, H.W.;Lee, C.;Shin, J.H.;Song, K.H.;Shin, S.H.;Park, J.I.;Park, K.J.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1352-1354
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    • 1997
  • Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

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The property of surface morphology of AZO films deposited at low temperature with post-annealing (저온증착 AZO 박막의 분위기 후열처리에 따른 표면 형상 특성)

  • Jeong, Yun-Hwan;Chen, Ho;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.417-418
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    • 2008
  • Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

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Electrical and Optical Properties of Carbon Nanotube Networks Formed on Glass Substrate by Dip-Coating Method (담지 방법을 통해 유리 기판 위에 형성된 탄소나노튜브 네트워크의 전기적 및 광학적 특성)

  • Jang, Eui-Yun;Kang, Tae-June;Im, Hyung-Wook;Kim, Dae-Weon;Kim, Yong-Hyup
    • Composites Research
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    • v.21 no.1
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    • pp.8-15
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    • 2008
  • Single-walled carbon nanotube networks(SWNT-networks) were uniformly formed on a glass substrate by the dip-coating method. The changes of electrical and optical properties of SWNT-networks were investigated with respect to processing variables including number of dip, concentration of SWNT-colloidal solution, withdrawal velocity. Consequently, the sheet resistance and transmittance of the SWNTs-networks were sensitively controlled by the processing variables. The networks have highly uniform sheet resistance and optically excellent transmittance within the range of visible ray.

Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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