• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.10-14
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• 2003

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${\mu}m$-CsI:Na/30 ${\mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${\mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${\mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.

• 한국결정성장학회지
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• 제16권4호
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.

• 한국전자파학회논문지
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• 제16권2호
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• pp.120-127
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• 2005

연속적으로 연결된 방향성 결합기를 사용한 트랜스버설 필터 설계 방법을 제안하였다. 그 결합기형 트랜스버설 필터는 연속적으로 변화하는 불균일 결합선로로 간주될 수 있다. 이 설계 방법은 결합도 주파수 특성 패턴이 갖는 극점을 제어함으로써 원하는 결합도의 최적값을 도출하는데 기반을 두며, 이 최적화 과정에서 Woodward-Lawson 샘플링법을 개선 및 적용시키므로서 트랜스버설 필터가 갖는 분포된 지연요소와 가중치 요소를 쉽게 합성할 수 있도록 하였다. 응용을 위해 스펙트럴 영역법을 사용하여 마이크로스트립 트랜스버설 필터를 제작하고 결합기의 모드 위상속도 보상을 위해 최적한 유전체 덮개층을 적용시켰다. 실험결과로부터 제안한 방법의 타당성을 검증하였다.

• 전자공학회논문지D
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• 제36D권6호
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• pp.52-60
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• 1999

유효 굴절을 전달 매트릭스 방법을 이용하여 위상 천이 회절격자 필터의 구조상의 비이상성의 영향을 살펴봄으로써 이 필터의 제작성을 검토하였다. 계산 결과, 위상 천이 오차나 회절결자 주기의 랜덤 변이는 이들 오차에 따른 공진 파장의 변화가 필터의 투과 대역폭 이내에 있어야 함을 알 수 있었다. ITU 기준에 따른 파장과 대역폭을 기준으로 할 때, 이는 상대 오차가 0.1% 이내여야 함을 의미하며, 이 정도의 허용 오차는 회절격자의 제작에 큰 부담으로 작용한다. 필터 끝면 반사는 투과대역의 ripple을 증가시키므로 ripple을 0.25dB 이하로 줄이려면 반사율이 1% 이하로 되어야 한다. 또 위상 천이 필터는 다중 반사에 따른 공진현상을 이용하기 때문에 도파로 손실은 증배되어 나타남을 보였으며, 도파로 손실이 1dB/cm로 낮아도 약 0.2dB의 투과 손실이 나타났다. 이 연구 결과는 파장 다중화 방식 협대역 투과 필터를 설계하고 제작하는데 있어 기본 자료로서 중요한 의미를 가진다.

• 센서학회지
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• 제4권2호
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• pp.51-57
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• 1995

Indium Tin Oxide (ITO) 박막을 $In_{2}O_{3}$(90mol%) : $SnO_{2}$(10mo1%)의 조성비를 가지는 타겟을 사하여 rf 마그네트론 스퍼터링 법으로 제작하였다. 기판온도 100, 200, 300, 400, $500^{\circ}C$ 와 열처리 온도 300, 400, $500^{\circ}C$로 변화시켜 주면서 제작하였으며 X-ray 회절 패턴, 전기적 특성, 투과도, SEM 사진 등으로 분석하였다. 그 결과 기판온도를 증가시킬수록 결정성, 전기 전도도와 투과도가 향상되었다. 그러나 공기 중에서 열처리 온도를 증가함에 따라 도리어 전도도는 감소하였다. 기판온도 $300^{\circ}C$ 이상에서 $3000\;{\AA}$ 두께를 가지고 성장된 ITO 박막은 약 $2{\times}10^{-4}{\Omega}cm$의 저항률과 85% 이상의 가시광 투과율을 가졌다.

• Advances in materials Research
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• 제2권3호
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• pp.141-153
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• 2013

Nanocrystalline Barium niobate ($BaNbO_3$) has been synthesized by a novel auto-igniting combustion technique. The X-Ray diffraction studies reveals that $BaNbO_3$ posses a cubic structure with lattice constant $a=4.071{\AA}$. Phase purity and structure of the nano powder are further examined using Fourier-Transform Infrared and Raman spectroscopy. The average particle size of the as prepared nano particles from the Transmission Electron Microscopy is 20 nm. The UV-Vis absorption spectra of the samples are recorded and the calculated average optical band gap is 3.74eV. The sample is sintered at an optimized temperature of $1425^{\circ}C$ for 2h and attained nearly 98% of the theoretical density. The morphology of the sintered pellet is studied with Scanning Electron Microscopy. The dielectric constant and loss factor of a well-sintered $BaNbO_3$ at 5MHz sample is found to be 32.92 and $8.09{\times}10^{-4}$ respectively, at room temperature. The temperature coefficient of dielectric constant was $-179pp/^{\circ}C$. The high dielectric constant, low loss and negative temperature coefficient of dielectric constant makes it a potential candidate for temperature sensitive dielectric applications.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• 한국재료학회지
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• 제23권11호
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• pp.613-619
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• 2013

$Cu_2ZnSn(S_x,Se_{1-x})_4$ (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from $520^{\circ}C$ to $580^{\circ}C$. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the $Mo(S_x,Se_{1-x})_2$ (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.667-674
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• 2007

Phase behavior for the mixed aqueous surfactant systems of cationic octadecyl trimethyl ammonium chloride (OTAC)/anionic ammonium dodecyl sulfate (ADS)/water was examined. Below the total surfactant concentrations of 1.5 m molal, mixed micelles were formed. At the total surfactant concentrations higher than 1.5 m molal, there appeared a region where mixed micelles and vesicles coexist. As the surfactant concentration increased, the systems looked very turbid and much more vesicles were observed. The vesicles were spontaneously formed in this system and their existence was observed by negative-staining transmission electron microscopy (TEM), small-angle neutron scattering (SANS) and encapsulation efficiency of dye. The vesicle region was where the molar fraction α of ADS to the total mixed surfactant was from 0.1 to 0.7 and the total surfactant concentration was above 5 × 10-4 molality. The size and structure of the vesicles were determined from the TEM microphotographs and the SANS data. Their diameter ranged from 450 nm to 120μm and decreased with increasing total surfactant concentration. The lamellar thickness also decreased from 15 nm to 5 nm with increasing surfactant concentration and this may be responsible for the decrease in vesicle size with the surfactant concentration. The stability of vesicles was examined by UV spectroscopy and zeta potentiometry. The vesicles displayed long-term stability, as UV absorbance spectra remained unchanged over two months. The zeta potentials of the vesicles were large in magnitude (40-70 mV) and the observed longterm stability of the vesicles may be attributed to such high ζ potentials.