• 전기학회논문지
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• 제64권6호
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• pp.845-851
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• 2015

Load shedding is a last measure to avoid nationwide cascading collapses of power system by removing the pre-determined amount of loads from the main grid. In Korea, SPS(Special Protection System) is prepared to keep the power system stability from the extreme contingency of the critical transmission line losses. Among them, we need to pay attention to 765kV T/L’s because they have great influence on the total system stability. According to the present SPS operating guide, the total loads of 1,500MW should be removed through 2 step under-voltage load shedding(UVLS) scheme in case of 765kV T/L’s contingencies. However, it is not clear to defined how to determine the typical load reduction amounts for each case. This paper proposes a method to estimate appropriate amounts of load shed for 765kV T/L’s contingencies by analyzing the relevant national and international standards.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제10권1호
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• pp.152-167
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• 2016

This paper investigates the simultaneous wireless information and power transfer (SWIPT) for two-hop orthogonal frequency division multiplexing (OFDM) decode-and-forward (DF) relay network, where a relay harvests energy from radio frequency signals transmitted by a source and then uses the harvested energy to assist information transmission from the source to its destination. The power splitting receiver is considered at the relay. To explore the performance limit of such a SWIPT-enabled system, a resource allocation (RA) optimization problem is formulated to maximize the achievable information rate of the system, where the power allocation, the subcarrier pairing and the power splitting factor are jointly optimized. As the problem is non-convex and there is no known solution method, we first decompose it into two separate subproblems and then design an efficient RA algorithm. Simulation results demonstrate that our proposed algorithm can achieve the maximum achievable rate of the system and also show that to achieve a better system performance, the relay node should be deployed near the source in the SWIPT-enabled two-hop OFDM DF relay system, which is very different from that in conventional non-SWIPT system where the relay should be deployed at the midpoint of the line between the source and the destination.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1378-1380
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• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.636-639
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• 2004

This paper presents the fabrication and performance evaluation of zinc oxide varistors for the arresters used for station system. ZnO varistors were fabricated with typical ceramic production methods and the structural and electrical characteristics were investigated. All varistors exhibited high density, which were in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed in the two and four shots, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34% and 0.05%, respectively, which were in the acceptance range of 5%. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the new future.

• 전자공학회논문지D
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• 제36D권11호
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• pp.18-26
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• 1999

최근, 유사 빔 전파방법이나 비 직교성 결합모드이론과 같은 다양한 근시적 해석법들이 중첩모드에 기초한 테이퍼 방향성 결합기의 그 광학적 특성을 분석하기 위하여 제안되어 왔다. 비록, 이들 접근 방식들이 특별한 구조에서 충분히 정확한 결과들을 제공하지만 테이퍼 전송 구조와 같은 민감한 광 소자 해석에는 불충분하다. 이를 위하여, 우리는 그 방향성 결합기의 전력전송을 정확하게 해석하기 위하여 새롭게 발전된 모드 전송선로, 해석법을 소개하고 이용하고자 한다. 이를 이용한 수치 해석 결과 대칭인 두 테이퍼 채널의 간격이 증가함에 따라 우/기 모드의 전파상수는 하나의 값으로 수렴하였다. 더욱이, 테이퍼 각도가 ${\theta}=0.1^{\circ}$일 때 하나의 전송 채널을 통하여 입사된 모드의 97%가 다른 전송 채널로 전송되었고, 그 기운 각도가 증가함에 따라 전력 전송은 현저하게 감소하였다.

• 한국전자파학회논문지
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• 제17권8호
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• pp.739-745
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• 2006

본 논문은 공진 회로를 이용하여 군지연 시간을 조정할 수 있는 방법을 제안하였다. 군지연 시간을 조정할 수 있는 군지연 시간 조정기(GDTA)는 가변 캐패시터와 가변 등가 인덕터로 구성되어 있다. 가변 캐패시터와 가변 등가 인덕터는 병렬로 연결되어 있으며 각각 다른 바이어스에 의해 조절된다. 가변 등가 인덕터는 높은 임피던스를 갖는 전송 선로에 가변 캐패시터를 연결하여 구현했다. 군지연 시간은 병렬로 구성된 회로의 캐패시턴스와 인덕턴스의 변화에 의해 조정되어진다. 이 때, 공진 주파수는 고정되어지도록 해야 한다. 제안된 GDTA는 RFID 주파수 대역$(908.5{\sim}914 MHz)$에 맞추어 제작되었고, 군지연 시간의 조정범위는 약 3ns였다.

• 한국인터넷방송통신학회논문지
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• 제16권1호
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• pp.239-244
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• 2016

등각변환 해석법과 종방향 모드 전송선로 이론을 이용하여 이중 샌드위치 Rib-형 도파로에 기초한 곡면형 편광 무의존성 방향성 결합기(PI-CDC)의 편광특성을 자세하게 탐구하였다. 제안한 곡면형 방향성 결합기의 편광 무의존성 조건을 얻기 위하여 곡면의 내부 반경 크기에 따라 변하는 quasi-TE 모드와 quasi-TM 모드의 결합길이와 결합효율을 분석하였다. 수치해석 결과, 수 마이크로미터 크기의 곡면형 편광 무의존성 방향성 결합기는 이중 샌드위치 층의 구조적, 물질적 변수들과 곡률반경을 잘 선택함으로써 구현할 수 있음을 보였다. 또한, 곡면형 편광 무의존성 방향성 결합기에서 전파하는 quasi-TE/TM 모드들의 분포 프로필을 분석하였고, 그 분석을 통하여 곡면이 전파특성에 어떤 영향을 미치는지에 대하여 조사하였다.

• 한국전자통신학회논문지
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• 제1권1호
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• pp.70-80
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• 2006

통신 서비스 시장의 패러다임이 유선 음성통신에서 무선의 데이터 통신으로 급속히 확산되고 있다. 이러한 통신시장의 변화를 수용하기 위해서는 고속의 전송속도에 근거한 다양한 서비스 제공과 아울러 인터넷 응용에 기반한 다양한 서비스들이 제공되어 기존의 이동통신망의 제한성을 탈피한 고품질의 이동통신망들의 구성이 요구된다. 이러한 고속통신을 수용하기 위해서는 무선 신호처리 기술, 광대역 전송기술, 첨단 이동통신망 구축 기술이 필수적이며, 효율적인 운용 기술에 의한 가입자 서비스의 수용 또한 요구되어 진다. 디지털 이동통신 시스템의 기반 기술로 활용되어 온 CDMA 다중접속 방식은 음성, SMS, 회선 데이터 서비스를 제공하기 위한 IS-95A/B 시스템 과 3세대 이동통신 시스템의 규격으로 평가받고 있는 동기방식 CDMA2000, 비동기방식 WCDMA 기술 등이 개발되고 있다. 본 논문에서는 CDMA2000-1X 이동통신 시스템의 망 구조 및 특징을 분석하고, 각 서비스 제공 방안 분석을 통하여 차세대 이동통신망에서의 효율적인 망 구성방안의 기초자료로 도출하며, 3세대 이동통신망의 차세대 이동통신망으로의 진화 전략과 아울러 망 진화를 위하여 요구되는 핵심기술 등을 분석하였다.

• 한국안전학회지
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• 제28권4호
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• pp.1-7
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• 2013

Train accidents can be directly connected to fatal accidents-collision, derailment, Fire, railway crossing accidents-resulting in tremendous human casualties. First of all, the railway derailment is not only related to most of railway accidents but also it can lead to much more catastrophic accompanying train overtured than other factors. Therefore, it is most important factor to ensure railway safety. some foreign countries have applied to the detector machines(e.g., ultrasonic detector car, sleep mode, current detector, optical sensing, optical fiber). Since it was developed in order to prevent train from being derailed. In korea, the existing track method has been used to monitor rail condition using track circuit. However, we found out it impossible for Communication Based Train Control system(CBTC), recent technology to detect rail condition using balise(data transmission devices) without no track circuit. For this reason, it is needed instantly to develop real-time monitoring system used to detect broken rails. Firstly, this paper presents domestic and international statues analysis of rail breaks technology. Secondly, the composition and the characteristics of the real-time monitoring system. Finally, the evidence that this system could assumed the location and type of broken rails was proved by the experiment of prototype and operation line tests. We concluded that this system can detect rail break section in which error span exist within${\pm}1m$.