• Title/Summary/Keyword: Transition temperature range

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Preparation and Properties of ZnO Thin Films by Metal-Organic Chemical Vapor Deposition Using Diethylzinc Source (Diethylzinc를 Source로 사용하는 화학증착법(MOCVD)에 의한 ZnO 박막의 제조 및 물성에 관한 연구)

  • 김경준;김광호
    • Journal of the Korean Ceramic Society
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    • v.28 no.8
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    • pp.585-592
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    • 1991
  • ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

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A Study on Frequency Dependence on Dielectric Properties of Silicone Rubber Sheets (실리콘 고무 시트의 유전특성에 미치는 주파수 의존성에 관한 연구)

  • Lee, Sung Ill
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.405-410
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    • 2020
  • In this study, the following results were obtained by analysis of electric properties with FT-IR, DSC, XRD, and SEM, in the range of temperature 30~160℃ and frequency 0.1~200 kHz, when filling agent (0~100 phr) and silicone oil (0~12 phr) were added to raw silicone rubber. In the case of 100 phr mixed samples, the relative dielectric constant εr gradually decreased from 4.3 to 3.96 as frequency increased, and the dielectric loss tan δ decreased to 0.01 at 300 Hz, then increased to 0.022 at 30 kHz, then decreased to 200 kHz. The FT-IR analysis identified the same binding structure according to the chemical composition of added silica (SiO2). Through DSC analysis, we could determine the change of heat quantity and the glass transition temperature of each specimen. In the XRD analysis, it was found that the images SiO2, TiO2, and Fe2O3 appeared for specimens with 0%, 50% and 100% filling agent. Finally, the SEM analysis confirmed that particles of 0.5 to 1.5 ㎛ size with silica (SiO2) mixing were dispersed evenly.

Studies of Nonstoichiometry and Physical Properties of the Perovskite $Sm_{1-x}Sr_xCoO_{3-y}$ System

  • 강진우;류광현;여철현
    • Bulletin of the Korean Chemical Society
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    • v.16 no.7
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    • pp.600-603
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    • 1995
  • A series of samples in the Sm1-xSrxCoO3-y(x=0.00, 0.25, 0.50, 0.75 and 1.00) system has been prepared at 1200 ℃ under ambient atmosphere. The X-ray diffraction patterns of the samples with x=0.00 and 0.25 are indexed with orthorhombic symmetry like GdFeO3 and x=0.50 appears to be perfectly cubic. In the tetragonal system (x=0.75), the structure is similar to that of SrCoO2.80. The composition of x=1.00, SrCoO2.52, shows the brownmillerite-type structure. The reduced lattice volume is increased with x value in this system. The chemical analysis shows the τ value (the amount of the Co4+ ions in the system) is maximized at the composition of x=0.50. Nonstoichiometric chemical formulas are determined by the x, τ and y values. The electrical conductivity has been measured in the temperature range of 78 to 1000 K. The activation energy is minimum for those of x=0.25 and x=0.50 with metallic behavior. First-order semiconductor-to-metal transition of SmCoO3 is not observed. Instead, a broad, high-order semiconductor-to-metal transition is observed. In general, the effective magnetic moment is increased with increasing τ values at low temperature. At high temperature, the magnetic moment is maximum for that of x=0.00. The 3d-electrons are collective and give ferromagnetism in x=0.50.

Heat-treatment effects on oxygen evolution reaction of nickel-cobalt layered double hydroxide

  • Lee, Jung-Il;Ko, Daehyeon;Mhin, Sungwook;Ryu, Jeong Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.3
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    • pp.143-148
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    • 2021
  • Alkaline oxygen evolution reaction (OER) electrocatalysts have been widely studied for improving the efficiency and green hydrogen production through electrochemical water splitting. Transition metal-based electrocatalysts have emerged as promising materials that can significantly reduce the hydrogen production costs. Among the available electrocatalysts, transition metal-based layered double hydroxides (LDHs) have demonstrated outstanding OER performance owing to the abundant active sites and favorable adsorption-desorption energies for OER intermediates. Currently, cobalt doped nickel LDHs (NiCo LDHs) are regarded as the benchmark electrocatalyst for alkaline OER, primarily owing to the physicochemical synergetic effects between Ni and Co. We report effects of heat-treatment of the as-grown NiCo LDH on electrocatalytic activities in a temperature range from 250 to 400℃. Electrocatalytic OER properties were analysed by linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS). The heat-treatment temperature was found to play a crucial role in catalytic activity. The optimum heat-treatment temperature was discussed with respect to their OER performance.

A Study on the Conductivity of Polycrystalline Semiconductor Nickel Oxide (NiO의 Semiconductivity에 關한 硏究)

  • Choi Jae Shi
    • Journal of the Korean Chemical Society
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    • v.12 no.2
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    • pp.38-38
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    • 1968
  • The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\; to\; 800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\; mmHg\; to\; 10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e.${\sigma}σ = K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

A Study on the Conductivity of Polycrystalline Semiconductor Nickel Oxide (NiO의 Semiconductivity에 關한 硏究)

  • Choi, Jae-Shi;Yo, Chul-Hyun
    • Journal of the Korean Chemical Society
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    • v.12 no.2
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    • pp.39-43
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    • 1968
  • The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\;to\;800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\;mmHg\;to\;10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e. ${\sigma}=K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

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Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.5
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

Ion Transport and High Frequency Dielectric of the Hollandite $Nax(Ti_8-_xCr_x)O_{16}$ (Hollandite $Nax(Ti_8-_xCr_x)O_{16}$의 이온 전송과 고유전율)

  • Shin, Hyun-Mahn;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2008.09a
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    • pp.243-244
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    • 2008
  • The Velocity Autocorrelation Function (VAF) of the sodium ions is calculated for a range of temperature from 250K to 1000K and converted into the linear ac-conductivity and ac-susceptibility response via Fourier transformation. A peak is found in the conductivity around $6{\times}10^{12}Hz$ that has some of the character of a Poley absorption. Here it is shown to be due to an harmonically coupled site vibrations of the sodium atoms, which extend only over a limited range. At frequencies below the peak the conductivity tends towards a constant i.e. dc value corresponding to a constant flow of ions through the simulation cell. At high temperatures the conductivity due to this ion transport process behaves like a metal with an insulator to metal transition occurring around a specific temperature.

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A Study of Dynamic Viscoelastic Properties on Temperatures of Natural Rubber (천연고무의 온도에 따른 동적 점탄성 연구)

  • Lee, Bum-Chul;Yoo, Kil-Sang
    • Elastomers and Composites
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    • v.32 no.1
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    • pp.29-36
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    • 1997
  • The change of elastic modulus(E'), loss modulus(E"), and loss $tangent(tan{\delta})$ were investigated on condition of double strain amplitude (DSA) at temperature of $-40{\sim}80^{\circ}C$ for carbon black filled natural rubber. E', E", and $tan{\delta}$ were increased as it closed to the glass transition temperature due to decrease of rubber network flexibility and carbon black agglomerate interaction. In the micro strain range, energy loss showed maximum value because of the chain slippage in rubber matrix, but the regeneration of carbon black agglomerate and rubber matrix affected decrease of energy loss over the mid-range strain. As a results of regression analysis, $E'\;_{max}$ correlation with ${\Delta}E'$ $(E'\;_{0.4%DSA}-E'\;_{2.0%DSA})$ showed linear relationship.

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Fabrication and characteristics of ITO thin films on CR39 substrate for transparent OTFT

  • Kwon, Sung-Yeol
    • Journal of Sensor Science and Technology
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    • v.16 no.3
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    • pp.229-233
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    • 2007
  • The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.