• Nuclear Engineering and Technology
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• v.27 no.3
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• pp.281-291
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• 1995

The objective of this work is to obtain the experimental data for the heat transfer processes occurring both on the inside and outside surfaces of containment steel wall with dry and wet outer surface conditions in the passive containment cooling system. The test model represented a 60$^{\circ}$ section of a containment vessel based on the AP 600 geometry. Major linear dimensions of the test model ore reduced tv a factor of ten. To simulate the decay heat a steam generator heated by electricity was placed in the test model. The maximum heat flux was 8.91 kW/$m^2$. Two types of tests were performed. The one was the tort on the natural convection of air without water film flow. The other was the evaporative heat transfer test with the falling water film flow and natural air draft. no test result shooed that the heat transfer capability by the natural convection from the containment to the air without oater film flow was limited at about 1.48 kW/$m^2$ heat flux. It was found that the heat removal capability was remarkably enhanced in the tests with the waster film flow and air draft. The obtained heat transfer data ore compared with the existing correlations.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.144.2-144.2
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• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2454-2465
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• 2023

Film boiling may lead to burnout of the heating element. Even though burnout does not occur, the heating element is subject to deformation because it is not sufficiently strong to withstand external loads. In particular, the ballooning and rupture of a tube under film boiling are important phenomena in the field of nuclear reactor safety. If the tube-type cladding of nuclear fuel ruptures owing to high internal pressure and thermal load, radioactive materials inside the cladding are released to the coolant. Therefore, predicting the ballooning and rupture is important. This study presents numerical simulations to predict the ballooning behavior and rupture time of a horizontal tube at high internal pressure under saturated film boiling. To do so, a multi-step coupled simulation of conjugated film boiling heat transfer and ballooning using creep model is adopted. The numerical methods and models are validated against experimental values. Two different nonuniform heat flux distributions and four different internal pressures are considered. The three-step simulation is enough to obtain a convergent result. However, the single-step simulation also successfully predicts the rupture time. This is because the film boiling heat transfer characteristics are slightly affected by the tube geometry related to creep ballooning.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.8
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• pp.678-685
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• 2006

Analysis of drying characteristics has been carried out with one-dimensional model in the dryer using the principle of the refraction of radiation. The dryer is composed of hot water tank, plastic film conveyer belt, drying material, etc. The model considers the con-duction and radiation within the plastic film and drying material. The film is semitransparent to radiation and the drying material is assumed to be semitransparent or opaque to radiation. The results show that the effect of radiative transfer on the drying rate is relatively large when the thickness of drying material is small and the water temperature is high. When the material is thin, the drying rate due to conduction is also enhanced and the drying time can considerably be reduced.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.867-868
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• 2011

Transient Analysis on heat transfer of rocket engine combustion chamber and wall temperature variation was carried out, especially, calculations of LOx/kerosene rocket engine with/without fuel film-cooling were conducted. Convective and radiative heat flux inside combustion chamber wall were calculated by the empirical equations for rocket engine combustion, and conduction of wall interior was calculated by numerical method with 2D axisymmetric grid. In this calculations the transient variations of wall temperature, the location changes of peak temperature and so on affected by film-cooling were analyzed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.17 no.9
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• pp.830-838
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• 2005

The present study investigated the optimization of the absorption performance of the vertical absorber tube with falling film by considering heat and mass transfer simultaneously. Effects of film Reynolds number, geometric parameters by insert device (spring) and flow pattern on heat and mass transfer performances have been also investigated. Especially, effects of coolant flow rate and the flow pattern by geometric parameters has been observed for the total heat and mass transfer rates through both numerical and experimental studies. Based on both predicted values, the optimal coolant flow rate was predicted as 1.98 L/min. The maximum absorption rate of the spring inserted tube was increased by the maximum of $20.0\%$ than those for uniform film of bare tube. Average Sherwood numbers and Nusselt numbers were increased as Reynolds numbers increased under the dynamic and geometric conditions showing the maximum absorption performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.644-651
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• 2009

The passivation (or deactivation) of a metal surface during oxide film formation has been quantitatively explored for a ferritic stainless steel by using dynamic electrochemical impedance spectroscopy (DEIS). For this purpose, the electrochemical impedance spectra were carefully examined as a function of applied potential in the active nose region of the potentiodynamic polarization curve, to separate the charge transfer resistance and oxide film resistance. From the discrepancy in the potential dependence between the experimental charge transfer resistance and the semi-empirically expected one, the degree of passivation could be quantitatively estimated. The sensitivity of passivation of the steel surface to anodic potential, which might be the measure of the quality of the oxide film formed under unit driving force or over-potential, decreased by 31% when 3.5 wt% NaCl was added to a 5 wt% $H_2SO_4$ solution.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.5
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• pp.577-586
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• 1999

Two problems with jet injection through the cylindrical film cooling hole are 1) penetration of jet into mainstream rather than covering the surface at high blowing rates and 2) nonuniformity of the film cooling effectiveness in the lateral direction. Compound angle injection is employed to reduce those two problems. Compound angle injection increases the film cooling effectiveness and spreads more widely. However, there is still lift off at high blowing rates. Shaped film cooling hole is a possible means to reduce those two problems. Film cooling with the shaped hole is investigated in this study experimentally. Film cooling hole used in present study is a shaped hole with conically enlarged exit and Inlet-to-exit area ratio is 2.55. Naphthalene sublimation method has been employed to study the local heat/mass transfer coefficient and film cooling effectiveness for compound injection angles and various blowing rates around the shaped film cooling hole. Enlarged hole exit area reduces the momentum of the jet at the hole exit and prevents the penetration of injected jet into the mainstream effectively. Hence, higher and more uniform film cooling effectiveness values are obtained even at relatively high blowing rates and the film cooling jet spreads more widely with the shaped film cooling hole. And the injected jet protects the surface effectively at low blowing rates and spreads more widely with the compound angle injections than the axial injection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.