• 대한전자공학회논문지
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• 제26권7호
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• pp.112-124
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• 1989

최근 본 연구팀에서 기존의 선 조사방식 디지탈 X-선 촬영시스템의 단점을 보완하여 촬영시간을 0.7초로 단축시키고 환자에의 X-선 조사량을 3mR 정도로 감소시킨 디지탈 X-선 촬영시스템을 개발한 바, 이 논문에서는 이 시스템의 감도 특성, 산란 성분 구성률, 양자검출 효율, 변조전달함수, 그리고 콘트라스트 상세도 등과 같은 물리적 및 영상특성들을 조사함으로써 그 촬영성능을 평가하였다. 조사 결과 이 시스템의 감도특성은 입사에너지에 비례하며, 기존의 필름-스크린 보다 적은 X-선 조사량으로도 더 우수한 콘트라스트 해상도를 지녔음이 나타났다. 그 이유는 뛰어난 산란선 제거능력과 양자검출 효율 때문인 것으로 생각된다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.900-904
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• 2011

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density ($D_{it}$) and grain boundary trap density ($N_{trap}$) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

• 대한토목학회논문집
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• 제4권2호
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• pp.25-33
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• 1984

활성탄(活性炭)의 입경변화(粒徑變化)가 trihalomethane의 흡착(吸着)에 미치는 영향(影響)에 관하여 실험적(實驗的)으로 연구(硏究)하였다. 실험(實驗)에 사용(使用)된 활성탄(活性炭)은 평균입경(平均粒徑)이 0.73mm에서 2.03mm까지의 4종류(種類)이었으며 이들에 대하여 물리적(物理的) 특성(特性)을 조사(調査)하고 trihalomethanedml 흡착능력(吸着能力)을 등온흡착실험(等溫吸着實驗)과 micro-column 실험(實驗)을 통해 밝혀냈다. 입경(粒徑)의 증가(增加)에 따라 비표면적(比表面積)이 감소(減少)하였고 활성탄(活性炭) 내부공극(內部空隙)의 반경(半徑)이 크게 증가(增加)하였다. 또한 큰 입자(粒子)의 경우에는 공극(空隙)의 크기가 넓게 분포(分布)하였다. Trihalomethane의 흡착(吸着)은 Freundlich 공식(公式)에 의해 잘 표현(表現)되었고 입경증가(粒徑增加)에 따라 흡착능력(吸着能力)의 감소(減少)가 뚜렷하게 나타났다. Micro-column 실험결과(實驗結果)와 모형(模型)의 Simulation으로부터 물질도달계수(物質導達係數)와 내부표면광산계수(內部表面壙散係數)를 산정(算定)하였다. 입경변화(粒徑變化)에 따른 계수(係數)의 변화(變化)는 무시(無視)할 수 있었으며 입경변화(粒徑變化)에 따른 효율(効率)의 차이(差異)는 주로 흡착능력(吸着能力)의 차이(差異)에서 오는 결과(結果)로 판단(判斷)된다.

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• 에너지공학
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• 제12권2호
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• pp.84-92
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• 2003

구리밀봉 증기발생기의 열적크기 계산을 위한 1차원 열수력코드를 개발하였다. 고온 및 저온측 전열관사이의 구리의 열전도는 1차원으로 가정하고, 전열관 피치의 함수로 열저항을 구하였다 물/증기측 유동영역은 아냉, 포화핵비등, 포화막비등, 과열영역의 4 구간으로 구분하였다. 매개변수 연구를 위한 전열관 갯수는 250에서 3500이며, P/D비율은 각각1.4, 1.6, 1.8로 하였다. 계산결과, 전열관 갯수가 2500일 때 전열관 길이는 약 12 m, 직경은 약 3 m이다. P/D를 증가시키면 구리에 의한 열저항 성분이 증가하지만 전열관 길이는 큰 차이가 없음을 알 수 있었다.

• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.13-17
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• 2006

밀도가 높고 주기적인 배열의 기공과 나노패턴이 된 텅스텐 나노점이 실리콘 산화물/실리콘 기판위에 형성이 되었다. 기공의 지름은 25 nm이고 깊이는 40 nm 이었으며 기공과 기공 사이의 거리는 60 nm이었다. nm 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성했다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 건식 식각용 마스크를 만들었다. 실리콘 산화막은 불소 기반의 화학반응성 식각법을 이용하여 식각했다. nm크기의 트렌치 안에 선택적으로 증착된 텅스텐 나노점을 만들기 위해서 저압화학기상증착(LPCVD)방법을 이용하였다. 텅스텐 나노점과 실리콘 트렌치의 지름은 26 nm 와 30 nm였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.99.2-99.2
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• 2011

Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.