• Journal of Korea Water Resources Association
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• v.55 no.6
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• pp.393-404
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• 2022

Reliable terrestrial rainfall observations from satellites at finer spatial resolution are essential for urban hydrological and microscale agricultural demands. Although various traditional "top-down" approach-based satellite rainfall products were widely used, they are limited in spatial resolution. This study aims to assess the potential of a novel "bottom-up" approach for rainfall estimation, the parameterized SM2RAIN model, applied to the C-band SAR Sentinel-1 satellite data (SM2RAIN-S1), to generate high-spatial-resolution terrestrial rainfall estimates (0.01° grid/6-day) over Central South Korea. Its performance was evaluated for both spatial and temporal variability using the respective rainfall data from a conventional reanalysis product and rain gauge network for a 1-year period over two different sub-regions in Central South Korea-the mixed forest-dominated, middle sub-region and cropland-dominated, west coast sub-region. Evaluation results indicated that the SM2RAIN-S1 product can capture general rainfall patterns in Central South Korea, and hold potential for high-spatial-resolution rainfall measurement over the local scale with different land covers, while less biased rainfall estimates against rain gauge observations were provided. Moreover, the SM2RAIN-S1 rainfall product was better in mixed forests considering the Pearson's correlation coefficient (R = 0.69), implying the suitability of 6-day SM2RAIN-S1 data in capturing the temporal dynamics of soil moisture and rainfall in mixed forests. However, in terms of RMSE and Bias, better performance was obtained with the SM2RAIN-S1 rainfall product over croplands rather than mixed forests, indicating that larger errors induced by high evapotranspiration losses (especially in mixed forests) need to be included in further improvement of the SM2RAIN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of The Korean Association For Science Education
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• v.31 no.1
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• pp.78-98
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• 2011

The purpose of this study was to analyze elementary school students' interpretation of data characteristics by cognitive style. Participants were elementary students in sixth grade who can use integrated inquiry process skills. The students were divided into two groups, analytic cognitive style and wholistic cognitive style according to their response to Cognitive Style Analysis. They performed scientific interpretation of data activity. To collect data for this study, participants recorded the result on scientific interpretation of data activity paper and researcher recorded the situation on videotape and interviewed with participants after the end of interpretation of data to get additional data. And the findings of this study were as follows: First, the study analyzed interpretation of data characteristics by the operator regarding different situations of interpreting data according to cognitive style. For example, in the intermediate state, analytic-cognitive style students showed high achievement in identifying variables, and wholistic-cognitive style students were active in using prior knowledge to interpret data. Second, the result of analysis on the direction of interpreting data and preference for data types in interpreting data activities according to cognitive style are as follows: Wholistic-cognitive style students showed relatively high perception of information through the top-down approach. On the other hand, analytic-cognitive style students usually used the bottom-up approach gradually expanding detailed information to the scientific question-related answer and showed a preference data of the table type. Through the result, this study aimed to help establish a data interpretation strategy for learners to solve problems based on understanding of interpretation of data characteristics according to learners' cognitive style, and purposed the instruction design suggesting the data requiring various data interpretation strategies to develop learners' data interpretation ability.